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1. 发明授权

US08456891B2 Nonvolatile memory cells having oxygen diffusion barrier layers therein 有权
标题翻译：其中具有氧扩散阻挡层的非易失性存储单元
公开(公告)号：US08456891B2
公开(公告)日：2013-06-04
申请号：US13150596
申请日：2011-06-01
申请人： In-gyu Baek , Myung-jong Kim , Yong-ho Ha
发明人： In-gyu Baek , Myung-jong Kim , Yong-ho Ha
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.
摘要翻译：非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨，多晶硅，铝，氮化钛硅化物和导电氮化物。

2. 发明申请

US20110291066A1 Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same 有权
标题翻译：具有氧扩散阻挡层的电池的非易失性存储器件及其制造方法
公开(公告)号：US20110291066A1
公开(公告)日：2011-12-01
申请号：US13150596
申请日：2011-06-01
申请人： In-gyu Baek , Myung-jong Kim , Yong-ho Ha
发明人： In-gyu Baek , Myung-jong Kim , Yong-ho Ha
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.
摘要翻译：非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨，多晶硅，铝，氮化钛硅化物和导电氮化物。

3. 发明授权

US07126846B2 Method and driver for programming phase change memory cell 失效
公开(公告)号：US07126846B2
公开(公告)日：2006-10-24
申请号：US11401861
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

4. 发明申请

US20060181931A1 METHOD AND DRIVER FOR PROGRAMMING PHASE CHANGE MEMORY CELL 失效
标题翻译：编程相变记忆细胞的方法与驱动
公开(公告)号：US20060181931A1
公开(公告)日：2006-08-17
申请号：US11401866
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C16/06
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

5. 发明授权

US07082051B2 Method and driver for programming phase change memory cell 失效
标题翻译：用于编程相变存储单元的方法和驱动程序
公开(公告)号：US07082051B2
公开(公告)日：2006-07-25
申请号：US10845065
申请日：2004-05-14
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00 , H01L29/02 , H01L31/0376
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

6. 发明授权

US08732984B2 Shock absorbing shoes with triangle shock absorbing space 有权
标题翻译：减震鞋与三角减震空间
公开(公告)号：US08732984B2
公开(公告)日：2014-05-27
申请号：US13869127
申请日：2013-04-24
申请人： Yong-ho Ha
发明人： Yong-ho Ha
IPC分类号： A43B13/18
CPC分类号： A43B13/18 , A43B13/181
摘要： A shock absorbing shoe with a triangle shock absorbing space, the shoe having an outsole and a midsole, wherein the midsole is divided into upper and lower midsoles, a plurality of upper seating holes provided on opposite sides of the upper midsole behind an area corresponding to an arch region of a foot sole, a plurality of lower seating holes provided on opposite sides of the lower midsole. The shoe includes a shock absorbing means having a body member formed longitudinally between the upper and lower midsoles, and wing members provided on opposite sides of the body member. Each wing member includes an upper inclined portion inclined upwards to be received in the associated upper seating hole, a lower inclined portion inclined downwards to be received in the associated lower seating hole, and a connecting portion connecting the upper and lower inclined portions.
摘要翻译：一种具有三角形减震空间的减震鞋，鞋具有外底和中底，其中中底分为上下中底，多个上座位孔设置在上中底的相对侧的对应于脚底的拱形区域，设置在下部中底的相对侧上的多个下部安置孔。该鞋包括一个冲击吸收装置，该冲击吸收装置具有纵向形成于上下中底之间的主体构件，以及设置在本体构件的相对侧上的翼构件。每个翼构件包括向上倾斜以被接收在相关联的上座孔中的上倾斜部分，向下倾斜以被接收在相关联的下安置孔中的下倾斜部分和连接上下倾斜部分的连接部分。

7. 发明授权

US06894305B2 Phase-change memory devices with a self-heater structure 有权
标题翻译：具有自加热器结构的相变存储器件
公开(公告)号：US06894305B2
公开(公告)日：2005-05-17
申请号：US10780073
申请日：2004-02-17
申请人： Ji-hye Yi , Horii Hideki , Yong-ho Ha
发明人： Ji-hye Yi , Horii Hideki , Yong-ho Ha
IPC分类号： H01L27/10 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/126 , H01L45/144
摘要： Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.
摘要翻译：相变存储器件包括半导体衬底上的相变存储层。相变存储层具有基本上平行于半导体衬底的长轴的长轴，并且具有与第一表面相对的第一表面和与基本上平行于相变存储层的长轴的第二表面。第一电极设置在半导体衬底上，在相变存储层的第一接触区域中电连接到相变存储层的第一表面。第二电极设置在半导体基板上，在相变存储层的第二接触区域中电连接到相变存储层。第二接触区域是与第一接触区域分开的空间。

8. 发明申请

US20050036364A1 Method and driver for programming phase change memory cell 失效
标题翻译：用于编程相变存储单元的方法和驱动程序
公开(公告)号：US20050036364A1
公开(公告)日：2005-02-17
申请号：US10845065
申请日：2004-05-14
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C13/02 , G11C16/02 , G11C11/00 , G11C19/08
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

9. 发明申请

US20140101972A1 SHOCK ABSORBING SHOES WITH TRIANGLE SHOCK ABSORBING SPACE 有权
标题翻译：具有三角形震动吸收空间的防震鞋
公开(公告)号：US20140101972A1
公开(公告)日：2014-04-17
申请号：US13869127
申请日：2013-04-24
申请人： Yong-ho Ha
发明人： Yong-ho Ha
IPC分类号： A43B13/18
CPC分类号： A43B13/18 , A43B13/181
摘要： A shock absorbing shoe with a triangle shock absorbing space, the shoe having an outsole and a midsole, wherein the midsole is divided into upper and lower midsoles, a plurality of upper seating holes provided on opposite sides of the upper midsole behind an area corresponding to an arch region of a foot sole, a plurality of lower seating holes provided on opposite sides of the lower midsole. The shoe includes a shock absorbing means having a body member formed longitudinally between the upper and lower midsoles, and wing members provided on opposite sides of the body member. Each wing member includes an upper inclined portion inclined upwards to be received in the associated upper seating hole, a lower inclined portion inclined downwards to be received in the associated lower seating hole, and a connecting portion connecting the upper and lower inclined portions.
摘要翻译：一种具有三角形减震空间的减震鞋，鞋具有外底和中底，其中中底分为上下中底，多个上座位孔设置在上中底的相对侧的对应于脚底的拱形区域，设置在下部中底的相对侧上的多个下部安置孔。该鞋包括一个冲击吸收装置，该冲击吸收装置具有纵向形成于上下中底之间的主体构件，以及设置在本体构件的相对侧上的翼构件。每个翼构件包括向上倾斜以被接收在相关联的上座孔中的上倾斜部分，向下倾斜以被接收在相关联的下安置孔中的下倾斜部分和连接上下倾斜部分的连接部分。

10. 发明授权

US07126847B2 Method and driver for programming phase change memory cell 失效
公开(公告)号：US07126847B2
公开(公告)日：2006-10-24
申请号：US11401866
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

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