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1. 发明申请

US20040195593A1 Counteracting overtunneling in nonvolatile memory cells 有权
标题翻译：在非易失性存储单元中反作用超导
公开(公告)号：US20040195593A1
公开(公告)日：2004-10-07
申请号：US10830280
申请日：2004-04-21
申请人： Impinj, Inc., a Delaware Corporation
发明人： Christopher J. Diorio , Chad A. Lindhorst , Shailendra Srinivas , Alberto Pesavento , Troy N. Gilliland
IPC分类号： H01L027/10
CPC分类号： G11C16/3468 , G11C16/3404 , G11C16/3472 , G11C16/3477 , G11C16/3486 , G11C2216/10
摘要： Methods and apparatuses prevent overtunneling in nonvolatile floating gate memory (NVM) cells. An individual cell includes a circuit with a transistor that has a floating gate that stores charge, and a capacitor structure for extracting charge from the gate, such as by tunneling. A counteracting circuit prevents extracting charge from the floating gate beyond a threshold, therefore preventing overtunneling or correcting for it. In one embodiment, the counteracting circuit supplies electrons to the floating gate, to compensate for tunneling beyond a point. In another embodiment, the counteracting circuit includes a switch, and a sensor to trigger the switch when the appropriate threshold is reached. The switch may be arranged in any number of suitable ways, such as to prevent a high voltage from being applied to the capacitor structure, or to prevent a power supply from being applied to a terminal of the transistor or to a well of the transistor.
摘要翻译：方法和装置防止非易失性浮动栅极存储器（NVM）单元中的超导。单个电池包括具有晶体管的电路，其具有存储电荷的浮动栅极，以及用于从栅极提取电荷的电容器结构，例如通过隧穿。反作用电路防止从浮动栅极提取电荷超过阈值，因此防止对其进行过度隧穿或纠正。在一个实施例中，反作用电路将电子提供给浮动栅极，以补偿超出点的隧穿。在另一个实施例中，抵消电路包括开关和当达到适当的阈值时触发开关的传感器。开关可以以任何数量的适当方式布置，例如防止高电压施加到电容器结构，或者防止电源施加到晶体管的端子或晶体管的阱。

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