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1. 发明授权

US07271403B2 Isolating phase change memory devices 有权
标题翻译：隔离相变存储器件
公开(公告)号：US07271403B2
公开(公告)日：2007-09-18
申请号：US10319183
申请日：2002-12-13
申请人： Ilya Karpov , Ward Parkinson , Sean Lee
发明人： Ilya Karpov , Ward Parkinson , Sean Lee
IPC分类号： H01L47/00
CPC分类号： H01L27/2409 , H01L45/06
摘要： A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.
摘要翻译：可以使用在存储器单元和字线之间的肖特基二极管形式的隔离二极管来进行相变存储器。在一些实施例中，使用肖特基二极管隔离装置可使存储器更可扩展。

2. 发明申请

US20070247899A1 Programming a normally single phase chalcogenide material for use as a memory or FPLA 有权
标题翻译：编程正常的单相硫属化物材料，用作记忆体或FPLA
公开(公告)号：US20070247899A1
公开(公告)日：2007-10-25
申请号：US11407573
申请日：2006-04-20
申请人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
发明人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

3. 发明申请

US20070105267A1 Phase change memory with threshold switch select device 有权
标题翻译：具有阈值开关选择装置的相变存储器
公开(公告)号：US20070105267A1
公开(公告)日：2007-05-10
申请号：US11272208
申请日：2005-11-10
申请人： Ilya Karpov , Sean Lee , Yudong Kim , Greg Atwood
发明人： Ilya Karpov , Sean Lee , Yudong Kim , Greg Atwood
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , G11C13/0004 , H01L27/2427 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
摘要翻译：可以由连续的硫族化物层形成一个超声阈值开关。该层跨越多个单元，形成相变存储器。换句话说，超声阈值开关可以由在相变存储器的多个单元上不间断地延伸的硫族化物层形成。

4. 发明申请

US20080029752A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：相变记忆及其制造方法
公开(公告)号：US20080029752A1
公开(公告)日：2008-02-07
申请号：US11771601
申请日：2007-06-29
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
IPC分类号： H01L21/06 , H01L29/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/144 , H01L45/1683
摘要： Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.
摘要翻译：在电介质（18,22）内的通孔内形成硫族化物选择装置（24,120）和硫族化物存储元件（40,130）。结果，硫属化物被有效地捕获在通孔内，并且不需要胶或粘合层。此外，避免了分层问题。在与存储元件（40,130）相同的通孔（31）内形成喷枪材料（30）。在一个实施例中，由于存在侧壁间隔件（28），喷枪材料制成更薄。在另一个实施例中，没有使用侧壁间隔物。用于形成存储元件（130）的硫族化物（40）与喷枪材料（30）之间的相对小的接触面积是通过在电介质（34）中设置一个针孔开口来实现的，该电介质（34）将硫族化物和喷枪材料。

5. 发明授权

US07259023B2 Forming phase change memory arrays 有权
标题翻译：形成相变存储器阵列
公开(公告)号：US07259023B2
公开(公告)日：2007-08-21
申请号：US10939145
申请日：2004-09-10
申请人： Charles C. Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
发明人： Charles C. Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1691 , Y10S438/947
摘要： A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
摘要翻译：在一个实施例中，相变存储器可以形成为具有亚光刻的尺寸，通过在相变材料上形成表面特征，并用亚光刻尺寸的掩模涂覆表面特征。然后可以去除掩模的水平部分和表面特征，并且掩模的其余部分可以用于限定所述相变材料的尺寸。可以使用在所述相变材料上延伸的上电极作为掩模来限定相变材料的另一尺寸以蚀刻相变材料。

6. 发明申请

US20060257787A1 Multi-level phase change memory 有权
标题翻译：多级相变存储器
公开(公告)号：US20060257787A1
公开(公告)日：2006-11-16
申请号：US11127482
申请日：2005-05-12
申请人： Charles Kuo , Ilya Karpov
发明人： Charles Kuo , Ilya Karpov
IPC分类号： G11B7/24
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/1683 , Y10S438/90
摘要： A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not exceed the lateral extent of an underlying heater. As a result, the possibility of current bypassing the amorphous phase change material in the reset state is reduced, reducing the programming current that is necessary to prevent this situation. In addition, a more controllable multilevel phase change memory may be formed in some embodiments.
摘要翻译：可以形成适于多级编程的相变存储器。相变材料可以形成有不超过下面的加热器的横向范围的横向范围。结果，减少了在复位状态下绕过非晶相变材料的电流的可能性，从而减少了防止这种情况所必需的编程电流。此外，在一些实施例中可以形成更可控的多电平相变存储器。

7. 发明申请

US20070096073A1 Increasing phase change memory column landing margin 有权
标题翻译：增加相变记忆柱着陆边界
公开(公告)号：US20070096073A1
公开(公告)日：2007-05-03
申请号：US11262250
申请日：2005-10-28
申请人： Charles Dennison , Ilya Karpov
发明人： Charles Dennison , Ilya Karpov
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1675
摘要： A phase change memory with higher column landing margin may be formed. In one approach, the column landing margin may be increased by increasing the height of an electrode. For example, the electrode being made of two disparate materials, one of which includes nitride and the other of which does not. In another approach, a hard mask is used which is of substantially the same material as an overlying and surrounding insulator. The hard mask and an underlying phase change material are protected by a sidewall spacer of a different material than the hard mask. If the hard mask and the insulator have substantially the same etch characteristics, the hard mask may be removed while maintaining the protective character of the sidewall spacer.
摘要翻译：可以形成具有较高列着陆边缘的相变存储器。在一种方法中，可以通过增加电极的高度来增加列着色边缘。例如，电极由两种不同的材料制成，其中之一包括氮化物，另一个不包括氮化物。在另一种方法中，使用与覆盖和围绕的绝缘体基本上相同的材料的硬掩模。硬掩模和下面的相变材料由与硬掩模不同的材料的侧壁间隔物保护。如果硬掩模和绝缘体具有基本相同的蚀刻特性，则可以去除硬掩模，同时保持侧壁间隔物的保护特性。

8. 发明申请

US20060073631A1 Phase change memory with damascene memory element 有权
公开(公告)号：US20060073631A1
公开(公告)日：2006-04-06
申请号：US10949090
申请日：2004-09-24
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
IPC分类号： H01L21/06
CPC分类号： H01L45/1683 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16
摘要： A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.

9. 发明申请

US20050029504A1 Reducing parasitic conductive paths in phase change memories 审中-公开
标题翻译：减少相变存储器中的寄生导电路径
公开(公告)号：US20050029504A1
公开(公告)日：2005-02-10
申请号：US10634141
申请日：2003-08-04
申请人： Ilya Karpov
发明人： Ilya Karpov
IPC分类号： H01L45/00 , H01L47/00 , H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A phase change memory may be formed by defining a pore in an insulator over a semiconductor substrate. The pore may be filled with a metallic material to form a high resistance heater. A portion of the metallic material may be removed at the upper end of the pore. Thereafter, when the phase change material is deposited, a portion of the phase change material fills the upper end of the pore and the remainder of the phase change material overlies the pore and the insulator. A conductive material may be formed atop the phase change material. As a result, the creation of a parasitic path from a corner of the metallic heater to the overlying conductive material may be less likely.
摘要翻译：可以通过在半导体衬底上的绝缘体中限定孔来形成相变存储器。孔可以用金属材料填充以形成高电阻加热器。金属材料的一部分可以在孔的上端去除。此后，当相变材料沉积时，相变材料的一部分填充孔的上端，并且相变材料的其余部分覆盖孔和绝缘体。可以在相变材料的顶部形成导电材料。结果，产生从金属加热器的角部到上覆导电材料的寄生路径可能不太可能。

10. 发明授权

US08891319B2 Verify or read pulse for phase change memory and switch 有权
标题翻译：验证或读取相变存储器和开关的脉冲
公开(公告)号：US08891319B2
公开(公告)日：2014-11-18
申请号：US12956853
申请日：2010-11-30
申请人： Hernan Castro , Timothy C. Langtry , Richard Dodge , Ilya Karpov
发明人： Hernan Castro , Timothy C. Langtry , Richard Dodge , Ilya Karpov
IPC分类号： G11C7/06 , G11C13/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C13/0061 , G11C13/0064 , G11C2013/0052
摘要： Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.
摘要翻译：本文公开的实施例可以涉及为相变存储器和开关（PCMS）装置应用验证或读取脉冲。读取脉冲可以以第一电压施加第一时间段。可以在感测窗口期间检测相变存储器单元的阈值事件。感应窗口可以在施加读取脉冲的第一时间段期满之后关闭。

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