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    • 2. 发明申请
    • PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
    • 相变记忆及其制造方法
    • US20080029752A1
    • 2008-02-07
    • US11771601
    • 2007-06-29
    • Ilya KarpovCharles KuoYudong KimGreg Atwood
    • Ilya KarpovCharles KuoYudong KimGreg Atwood
    • H01L21/06H01L29/00
    • H01L45/04H01L27/2427H01L45/06H01L45/1233H01L45/126H01L45/141H01L45/144H01L45/1683
    • Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.
    • 在电介质(18,22)内的通孔内形成硫族化物选择装置(24,120)和硫族化物存储元件(40,130)。 结果,硫属化物被有效地捕获在通孔内,并且不需要胶或粘合层。 此外,避免了分层问题。 在与存储元件(40,130)相同的通孔(31)内形成喷枪材料(30)。 在一个实施例中,由于存在侧壁间隔件(28),喷枪材料制成更薄。 在另一个实施例中,没有使用侧壁间隔物。 用于形成存储元件(130)的硫族化物(40)与喷枪材料(30)之间的相对小的接触面积是通过在电介质(34)中设置一个针孔开口来实现的,该电介质(34)将硫族化物和喷枪 材料。