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1. 发明授权

US06738660B2 Resinous cover for use in bioelectrical impedance measuring apparatus 有权
标题翻译：用于生物电阻抗测量装置的树脂盖
公开(公告)号：US06738660B2
公开(公告)日：2004-05-18
申请号：US09989203
申请日：2001-11-21
申请人： Ikuo Hakomori , Yoshikazu Yoshida
发明人： Ikuo Hakomori , Yoshikazu Yoshida
IPC分类号： A61B505
CPC分类号： A61B5/0537 , A61B5/6887 , A61B2560/0468
摘要： A resinous cover for use in a bioelectrical impedance measuring apparatus is provided, in which the processes for manufacturing the resinous cover are significantly decreased in number and the components thereof are decreased in number and therefore the cost thereof is reduced to a low level. Further, such a resinous cover cause little the soles of feet to feel cool when the bioelectrical impedance is being measured, and the area of the electrode which comes into contact with the soles of feet is wide. A resinous cover for use in a bioelectrical impedance measuring apparatus, comprising electrodes and an insulating portion provided among the electrodes, wherein the electrodes and the insulating portion are integrally-molded.
摘要翻译：提供了一种用于生物电阻抗测量装置的树脂盖，其中制造树脂盖的工艺数量明显减少，其部件数量减少，因此其成本降低到低水平。此外，当测量生物电阻抗并且与脚底接触的电极的面积很宽时，这种树脂覆盖物几乎不会使脚的底部感到冷却。一种用于生物电阻抗测量装置的树脂盖，包括电极和设置在电极之间的绝缘部分，其中电极和绝缘部分被整体模制。

2. 发明授权

US07666699B2 Semiconductor strain gauge and the manufacturing method 失效
标题翻译：半导体应变片及其制造方法
公开(公告)号：US07666699B2
公开(公告)日：2010-02-23
申请号：US11799412
申请日：2007-05-01
申请人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
发明人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
IPC分类号： H01L21/00
CPC分类号： G01L1/2293
摘要： A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
摘要翻译：提供了一种与掺杂比扩散电阻区域周围的半导体衬底更高的掺杂杂质的半导体衬底的相同导电类型的高密度杂质扩散层，电极的一侧形成为延伸到高密度杂质扩散层和扩散电阻区域和高密度杂质扩散层连接在形成在固定导电型半导体衬底的表面上的半导体应变计中，并且具有相反导电类型的扩散电阻区域并且在扩散电阻区域的两端设置有电极。

3. 发明申请

US20100065933A1 Semiconductor strain gauge and the manufacturing method 失效
公开(公告)号：US20100065933A1
公开(公告)日：2010-03-18
申请号：US12590694
申请日：2009-11-12
申请人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
发明人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
IPC分类号： H01L29/84
CPC分类号： G01L1/2293
摘要： A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

4. 发明申请

US20070254387A1 Semiconductor strain gauge and the manufacturing method 失效
标题翻译：半导体应变片及其制造方法
公开(公告)号：US20070254387A1
公开(公告)日：2007-11-01
申请号：US11799412
申请日：2007-05-01
申请人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
发明人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
IPC分类号： H01L21/66 , H01L23/58 , H01L21/335
CPC分类号： G01L1/2293
摘要： A high-density impurity diff-used layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diff-used layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
摘要翻译：提供了一种与掺杂比扩散电阻区域周围的半导体衬底高的掺杂杂质的半导体衬底的相同导电类型的高密度杂质差分层，电极的一侧形成为延伸到高密度杂质扩散层和扩散电阻区域和高密度杂质不均匀层在形成在固定导电类型的半导体衬底的表面上的半导体应变计中连接并且设置有扩散电阻区域与半导体衬底相反的导电类型，并且在扩散电阻区域的两端设置有电极。

5. 发明授权

US07087016B2 Health management device and health management system 失效
公开(公告)号：US07087016B2
公开(公告)日：2006-08-08
申请号：US09984153
申请日：2001-10-29
申请人： Tamotsu Iwabuchi , Miyuki Kodama , Ikuo Hakomori
发明人： Tamotsu Iwabuchi , Miyuki Kodama , Ikuo Hakomori
IPC分类号： A61B5/00
CPC分类号： A61B5/6887 , A61B5/0002 , A61B5/05 , A61B2560/0468 , G06F19/00 , G06Q50/22
摘要： A health management device comprises at least four electrodes provided on a main body of an intelligent terminal unit; a constant current generating unit which applies a constant current to at least two electrodes among said at least four electrodes; a voltage detecting unit which detects a voltage of at least two electrodes among said at least four electrodes; a numeral input unit provided on said intelligent terminal unit; a display unit provided on said intelligent terminal unit; a switching unit which switches a function as an intelligent terminal unit into a function as a health management device and vice versa; and a control unit which calculates a health management indicator based on data input from said numeral input unit and a detected data from said voltage detecting unit and displays a calculated result on said display unit when said function being switched into the function as the health management device by said switching unit.

6. 发明授权

US08063457B2 Semiconductor strain gauge and the manufacturing method 失效
标题翻译：半导体应变片及其制造方法
公开(公告)号：US08063457B2
公开(公告)日：2011-11-22
申请号：US12590694
申请日：2009-11-12
申请人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
发明人： Ikuo Hakomori , Yuji Nakamura , Keiichi Nakanishi , Koichi Ida
IPC分类号： H01L29/84
CPC分类号： G01L1/2293
摘要： A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
摘要翻译：提供了一种与掺杂比扩散电阻区域周围的半导体衬底更高的掺杂杂质的半导体衬底的相同导电类型的高密度杂质扩散层，电极的一侧形成为延伸到高密度杂质扩散层和扩散电阻区域和高密度杂质扩散层连接在形成在固定导电型半导体衬底的表面上的半导体应变计中，并且具有相反导电类型的扩散电阻区域并且在扩散电阻区域的两端设置有电极。

7. 发明授权

US06327495B1 Health management device and health management system 失效
标题翻译：健康管理手段和健康管理体系
公开(公告)号：US06327495B1
公开(公告)日：2001-12-04
申请号：US09500480
申请日：2000-02-09
申请人： Tamotsu Iwabuchi , Miyuki Kodama , Ikuo Hakomori
发明人： Tamotsu Iwabuchi , Miyuki Kodama , Ikuo Hakomori
IPC分类号： A61B505
CPC分类号： A61B5/6887 , A61B5/0002 , A61B5/05 , A61B2560/0468 , G06F19/00 , G06Q50/22
摘要： A health management device comprises at least four electrodes provided on a main body of an intelligent terminal unit; a constant current generating unit which applies a constant current to at least two electrodes among said at least four electrodes; a voltage detecting unit which detects a voltage of at least two electrodes among said at least four electrodes; a numeral input unit provided on said intelligent terminal unit; a display unit provided on said intelligent terminal unit; a switching unit which switches a function as an intelligent terminal unit into a function as a health management device and vice versa; and a control unit which calculates a health management indicator based on data input from said numeral input unit and a detected data from said voltage detecting unit and displays a calculated result on said display unit when said function being switched into the function as the health management device by said switching unit.
摘要翻译：健康管理装置包括设置在智能终端单元的主体上的至少四个电极; 恒定电流产生单元，其对所述至少四个电极中的至少两个电极施加恒定电流; 电压检测单元，其检测所述至少四个电极中的至少两个电极的电压; 设置在所述智能终端单元上的数字输入单元; 设置在所述智能终端单元上的显示单元; 切换单元，其将作为智能终端单元的功能切换为作为健康管理设备的功能，反之亦然; 以及控制单元，其基于从所述数字输入单元输入的数据和来自所述电压检测单元的检测数据计算健康管理指示器，并且当所述功能切换到所述功能中时，在所述显示单元上显示计算结果作为健康管理设备通过所述开关单元。

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