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    • 4. 发明授权
    • Semiconductor intergrated circuit device
    • 半导体集成电路器件
    • US4870345A
    • 1989-09-26
    • US81095
    • 1987-08-03
    • Ichiro TomiokaKazuhiro SakashitaSatoru KishidaToshiaki HanibuchiTakahiko Arakawa
    • Ichiro TomiokaKazuhiro SakashitaSatoru KishidaToshiaki HanibuchiTakahiko Arakawa
    • G01R31/3185
    • G01R31/318536
    • A semiconductor integrated circuit includes cascaded asynchronous sequential logic circuits. Scanning shift registers are provided between the asynchronous sequential circuits to permit test data to be applied to the inputs of the circuits and to latch and shift out output data provided by the circuits in response to the test data. Additional gating circuitry is provided between the scanning shift registers and the inputs of the asynchronous sequential circuits to prevent new data latched into the scanning shift register from causing the asynchronous sequential circuit connected to the scanning shift register output from changing state during testing. This same additional circuitry may be used to provide pulses of controlled width and/or timing to asynchronous sequential circuit inputs in response to externally generated gating control signals.
    • 半导体集成电路包括级联异步顺序逻辑电路。 在异步时序电路之间提供扫描移位寄存器,以允许将测试数据应用于电路的输入,并根据测试数据锁存和移出由电路提供的输出数据。 在扫描移位寄存器和异步顺序电路的输入之间提供附加的选通电路,以防止锁存在扫描移位寄存器中的新数据使测试期间连接到扫描移位寄存器输出的异步时序电路变化。 可以使用相同的附加电路来响应于外部产生的门控控制信号来提供受控宽度和/或定时到异步顺序电路输入的脉冲。
    • 7. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US4825273A
    • 1989-04-25
    • US24010
    • 1987-03-10
    • Takahiko Arakawa
    • Takahiko Arakawa
    • H01L27/092H01L21/82H01L21/8238H01L27/118H01L27/02
    • H01L27/11807
    • A basic cell for semiconductor integrated circuit devices comprises at least one MOS transistor of a first type of electric conduction and at least one MOS transistor of a second type of electric conduction. On both sides of the source/drain region of the MOS transistor of the first type, diffusion contact regions of the second type of electric conduction are disposed, and, on both sides of the source/drain region of the MOS transistor of the second type, diffusion contact regions of the first type of electric conduction are disposed. In the respective MOS transistors, gate electrode contact regions are provided on either side of the diffusion contact regions. These MOS transistors are symmetrical with respect to the transverse axis running through the center of the respective source/drain regions. Disclosure is also made of a semiconductor integrated circuit device of the master slice type including a plurality of such basic cells arranged at regular intervals.
    • 用于半导体集成电路器件的基本单元包括至少一个第一类型的导电MOS晶体管和至少一个第二类导电MOS晶体管。 在第一类型的MOS晶体管的源极/漏极区域的两侧,设置第二类型导电的扩散接触区域,并且在第二类型的MOS晶体管的源极/漏极区域的两侧 设置第一类导电的扩散接触区域。 在各个MOS晶体管中,栅电极接触区设置在扩散接触区的两侧。 这些MOS晶体管相对于穿过相应源极/漏极区域的中心的横轴是对称的。 还公开了包括以规则间隔布置的多个这样的基本单元的主切片类型的半导体集成电路器件。
    • 9. 发明授权
    • Semiconductor integrated circuit device having gate array
    • 具有门阵列的半导体集成电路器件
    • US5291043A
    • 1994-03-01
    • US879103
    • 1992-05-04
    • Takahiko Arakawa
    • Takahiko Arakawa
    • H01L27/118H01L27/02H01L27/10
    • H01L27/11807
    • A gate array semiconductor integrated circuit device allowing less clock skews is disclosed. The device includes a clock signal driver formed in the part under a power supply interconnection for input-output buffer in a power supply pin region or a ground pin region. The clock signal driver is formed in the power supply pin region and so on which, conventionally, was not utilized, so that the clock signal driver can be large enough to provide a clock signal to each basic cell column. Therefore, the input-output buffer region is not unduly occupied by the clock signal driver, and the connecting pads do not become useless.
    • 公开了一种允许较少时钟偏移的门阵列半导体集成电路器件。 该器件包括在电源引脚区域或接地引脚区域内的输入输出缓冲器的电源互连部分下方形成的时钟信号驱动器。 时钟信号驱动器形成在通常未被使用的电源引脚区域等中,使得时钟信号驱动器可以足够大以向每个基本单元列提供时钟信号。 因此,输入输出缓冲区域不会被时钟信号驱动器过度占用,并且连接焊盘不会变得无用。