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1. 发明授权

US06403160B1 Ferroelectric thin film, production method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和制造薄膜的涂布液
公开(公告)号：US06403160B1
公开(公告)日：2002-06-11
申请号：US09389484
申请日：1999-09-03
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： B05D302
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZrxTi1−xSbyO3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。提供了包含PbZr x Ti 1-x S y O 3（其中0

2. 发明授权

US06197102B1 Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基铁电薄膜的涂布溶液以及由所述涂布溶液形成的铁电薄膜，铁电电容器和铁电存储体以及其制备方法
公开(公告)号：US06197102B1
公开(公告)日：2001-03-06
申请号：US09008245
申请日：1998-01-15
申请人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
IPC分类号： C09K300
CPC分类号： H01L21/02197 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/85 , C01P2004/80 , C01P2006/40 , C23C16/40 , C23C16/448 , H01L21/02282 , H01L21/31691 , H01L28/55
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi基铁电薄膜的涂布溶液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi的金属醇盐，金属元素A和金属元素B，通过将由任意两种以上的所述金属醇盐形成的复合金属醇盐与单独的水或与催化剂组合水解而得到的有机金属化合物，并且含有摩尔量为化学计量量的1-1.1倍摩尔量的Bi; 铁电薄膜（5），铁电电容器（10）和使用这种涂布液的铁电存储器; 及其制造方法。

3. 发明授权

US5976705A Ferroelectric thin film, making method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和用于制造薄膜的涂布液
公开(公告)号：US5976705A
公开(公告)日：1999-11-02
申请号：US768293
申请日：1996-12-17
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： C04B35/48 , C04B35/622 , H01B3/00 , H01B3/12 , H01L21/02 , H01L21/314 , H01L21/316 , B32B17/00
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。本文提供了包含PbZrxTi1-xSbyO3（其中0

4. 发明授权

US06528172B2 COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS, AND FERROELECTRIC THIN FILMS, FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS, AS WELL AS PROCESSES FOR PRODUCTION THEREOF 失效
标题翻译：用于形成基于双相硅氢化物薄膜的涂料溶液，以及用于生产方法的富硅薄膜，电解电容器和形成有涂料溶液的电解质存储体。
公开(公告)号：US06528172B2
公开(公告)日：2003-03-04
申请号：US09748160
申请日：2000-12-27
申请人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
IPC分类号： G11C1122
CPC分类号： H01L21/02197 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/85 , C01P2004/80 , C01P2006/40 , C23C16/40 , C23C16/448 , H01L21/02282 , H01L21/31691 , H01L28/55
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi基铁电薄膜的涂布溶液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi的金属醇盐，金属元素A和金属元素B，通过将由任意两种以上的所述金属醇盐形成的复合金属醇盐水与单独的水或与催化剂组合水解而得到的有机金属化合物，并且含有摩尔量为化学计量量的1-1.1倍摩尔量的Bi; 铁电薄膜（5），铁电电容器（10）和使用这种涂布液的铁电存储器; 及其制造方法。

5. 发明授权

US5811153A Coating solutions for use in forming bismuth-based dielectric thin films, and dielectric thin films and memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基电介质薄膜的涂布溶液以及与所述涂布溶液形成的介电薄膜和记忆体以及其制备方法
公开(公告)号：US5811153A
公开(公告)日：1998-09-22
申请号：US837478
申请日：1997-04-18
申请人： Akira Hashimoto , Yoshihiro Sawada , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Takao Kanehara
发明人： Akira Hashimoto , Yoshihiro Sawada , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Takao Kanehara
IPC分类号： C01G29/00 , C01G33/00 , C01G35/00 , C04B35/622 , C09D1/00 , C23C18/12 , H01B3/00 , H01L21/314 , H01L21/316 , B05D5/12 , B05D3/02
CPC分类号： H01L21/31691 , C04B35/62222 , C23C18/04 , C23C18/1216
摘要： Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.
摘要翻译：作为与Bi独立对应的金属化合物的金属氧化物，β-二酮或金属乙酸酯，金属元素A（其为Ca，Ba，Sr，Pb和Bi的至少一种成分）和金属元素B（其为与Ti，Nb和Ta组成的组中的至少一个成员与醇，羧酸酐，二醇，β-二酮或二羧酸单酯反应，以制备用于包含在用于形成Bi基电介质薄膜的涂料溶液中的化合物。涂层溶液用于生产介电薄膜或记忆体。

6. 发明授权

US6120912A Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基铁电薄膜的涂布溶液以及由所述涂布溶液形成的铁电薄膜，铁电电容器和铁电存储体以及其制备方法
公开(公告)号：US6120912A
公开(公告)日：2000-09-19
申请号：US102048
申请日：1998-06-22
申请人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
IPC分类号： B05D5/12 , C01G29/00 , C01G33/00 , C01G35/00 , C23C16/40 , C23C16/448 , C23C18/12 , H01B3/12 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , B32B9/00 , B05B3/10 , B05D1/36
CPC分类号： H01L21/02356 , C01G33/006 , C01G35/006 , C23C16/40 , C23C16/448 , H01L21/02197 , H01L21/02282 , H01L21/31691 , C01P2002/72 , C01P2004/80 , C01P2006/40 , H01L28/55 , Y10T428/24917
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi系铁电薄膜的涂布液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi，金属元素A和金属元素B的金属醇盐，并且含有由任何两种或更多种所述金属醇盐形成的复合金属醇盐; 铁电薄膜，铁电电容器和使用这种涂布溶液形成的铁电存储器及其制造方法。

7. 发明授权

US06303231B1 Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基铁电薄膜的涂布溶液以及与所述涂布溶液形成的铁电存储体以及其制备方法
公开(公告)号：US06303231B1
公开(公告)日：2001-10-16
申请号：US09391380
申请日：1999-09-08
申请人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
IPC分类号： B32B900
CPC分类号： H01L21/02356 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2004/80 , C01P2006/40 , C23C16/40 , C23C16/448 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L28/55 , Y10T428/24917
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi系铁电薄膜的涂布液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi，金属元素A和金属元素B的金属醇盐，并且含有由任何两种或更多种所述金属醇盐形成的复合金属醇盐; 铁电薄膜，铁电电容器和使用这种涂布溶液形成的铁电存储器及其制造方法。

8. 发明授权

US5972096A Coating solutions for use in forming bismuth-based ferroelectric thin films 失效
标题翻译：用于形成铋基铁电薄膜的涂层溶液
公开(公告)号：US5972096A
公开(公告)日：1999-10-26
申请号：US7752
申请日：1998-01-15
申请人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Yoshinori Maeno , Yukihisa Okada , Hiroyo Kato
IPC分类号： B05D5/12 , C01G29/00 , C01G33/00 , C01G35/00 , C23C16/40 , C23C16/448 , C23C18/12 , H01B3/12 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , C09K3/00
CPC分类号： H01L21/02356 , C01G33/006 , C01G35/006 , C23C16/40 , C23C16/448 , H01L21/02197 , H01L21/02282 , H01L21/31691 , C01P2002/72 , C01P2004/80 , C01P2006/40 , H01L28/55 , Y10T428/24917
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi系铁电薄膜的涂布液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi，金属元素A和金属元素B的金属醇盐，并且含有由任何两种或更多种所述金属醇盐形成的复合金属醇盐; 铁电薄膜，铁电电容器和使用这种涂布溶液形成的铁电存储器及其制造方法。

9. 发明申请

US20080176366A1 Method for fabricating AIGaN/GaN-HEMT using selective regrowth 审中-公开
标题翻译：使用选择性再生长制造AIGaN / GaN-HEMT的方法
公开(公告)号：US20080176366A1
公开(公告)日：2008-07-24
申请号：US11984015
申请日：2007-11-13
申请人： Juro Mita , Fumihiko Toda , Toshiharu Marui
发明人： Juro Mita , Fumihiko Toda , Toshiharu Marui
IPC分类号： H01L21/338
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： A semiconductor body includes, on a substrate, a stack of buffer layer, UID-GaN layer overlying the buffer layer, and UID-AlGaN layer overlying the UID-GaN layer. On the surface of the UID-AlGaN layer, an insulation film is deposited and patterned. An n+-GaN layer is selectively regrown directly on a region of the surface of the semiconductor body other than the insulation film using the patterned insulation film as a mask without etching the surface of the semiconductor body. A portion of the selectively regrown n+-GaN layer corresponding to a region reserved for an ohmic contact electrode is defined and the ohmic contact electrode is formed on the region. An opening exposing a region reserved for a gate electrode is defined and formed within the insulation SiO2 layer, and a gate electrode is formed in the region. An AlGaN/GaN-HEMT or MIS type of AlGaN/GaN-HEMT has lower contact resistance and uniform device characteristics.
摘要翻译：半导体本体在衬底上包括一叠缓冲层，覆盖缓冲层的UID-GaN层和覆盖在UID-GaN层上的UID-AlGaN层。在UID-AlGaN层的表面上，淀积并图案化绝缘膜。在不蚀刻半导体本体的表面的情况下，使用图案化的绝缘膜作为掩模，在半导体本体的除了绝缘膜之外的区域的区域上选择性地重新生长n + SUP / GaN。限定与欧姆接触电极保留的区域对应的部分选择性再生长的n + S + GaN层，并且在该区域上形成欧姆接触电极。在绝缘SiO 2层内限定并形成露出用于栅电极的区域的开口，并且在该区域中形成栅电极。 AlGaN / GaN-HEMT或MIS型AlGaN / GaN-HEMT具有较低的接触电阻和均匀的器件特性。

10. 发明授权

US07393791B2 Etching method, method of fabricating metal film structure, and etching structure 失效
标题翻译：蚀刻方法，金属膜结构的制造方法和蚀刻结构
公开(公告)号：US07393791B2
公开(公告)日：2008-07-01
申请号：US11512341
申请日：2006-08-30
申请人： Katsuaki Kaifu , Juro Mita
发明人： Katsuaki Kaifu , Juro Mita
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/7688 , Y10T428/24174
摘要： There is provided an etching method in which a protective film existing in an etching-destined region of a substrate structure is removed by means of ICP-RIE to form an exposure region of the principal surface of the substrate. The substrate structure comprises a substrate, a protective film formed on the substrate, a photoresist layer formed on the protective film, and a hole formed throughout the photoresist layer. The hole comprises an opening formed in the photoresist layer surface and a hollow linked to the opening in the thickness direction of the photoresist layer and reaching the protective film. ICP-RIE is performed under conditions such that (1) ICP power is 20 to 100 W, (2) RIE power is 5 to 50 W, and (3) the pressure in the etching chamber is 1 to 100 mTorr.
摘要翻译：提供一种蚀刻方法，其中通过ICP-RIE去除存在于衬底结构的蚀刻目的地区域中的保护膜，以形成衬底的主表面的曝光区域。衬底结构包括衬底，形成在衬底上的保护膜，形成在保护膜上的光致抗蚀剂层和在整个光致抗蚀剂层上形成的孔。孔包括形成在光致抗蚀剂层表面中的开口和在光致抗蚀剂层的厚度方向上连接到开口的中空并到达保护膜。 ICP-RIE在（1）ICP功率为20〜100W的条件下进行，（2）RIE功率为5〜50W，（3）蚀刻室内的压力为1〜100mTorr。

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