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1. 发明授权

US07205090B2 Chemical amplification type positive resist composition 有权
标题翻译：化学放大型正光刻胶组合物
公开(公告)号：US07205090B2
公开(公告)日：2007-04-17
申请号：US11037286
申请日：2005-01-19
申请人： Ichiki Takemoto , Kazuhiko Hashimoto , Satoshi Yamaguchi
发明人： Ichiki Takemoto , Kazuhiko Hashimoto , Satoshi Yamaguchi
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/115 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive resist composition comprising (A) a resin which comprises (i) 5 to 50% by mol of a structural unit of the formula (I), (ii) 5 to 50% by mol of a structural unit of the formula (II) and (iii) 5 to 50% by mol of at least one selected from the group consisting of structural units of the formulas (III) and (IV), and (B) an acid generator. The present composition is suitable for excimer laser lithography using ArF, KrF and the like, and shows various outstanding resist abilities, specifically, gives better effective sensitivity and resolution to resist patterns obtained therefrom, and gives particularly excellent pattern shape and excellent line edge roughness.
摘要翻译：本发明提供化学放大型正型抗蚀剂组合物

2. 发明申请

US20050158656A1 Chemical amplification type positive resist composition 有权
标题翻译：化学放大型正光刻胶组合物
公开(公告)号：US20050158656A1
公开(公告)日：2005-07-21
申请号：US11037286
申请日：2005-01-19
申请人： Ichiki Takemoto , Kazuhiko Hashimoto , Satoshi Yamaguchi
发明人： Ichiki Takemoto , Kazuhiko Hashimoto , Satoshi Yamaguchi
IPC分类号： G03C1/492 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/115 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive resist composition comprising (A) a resin which comprises (i) 5 to 50% by mol of a structural unit of the formula (I), (ii) 5 to 50% by mol of a structural unit of the formula (II) and (iii) 5 to 59% by mol of at least one selected from the group consisting of structural units of the formulas (III) and (IV), and (B) an acid generator. The present composition is suitable for excimer laser lithography using ArF, KrF and the like, and shows various outstanding resist abilities, specifically, gives better effective sensitivity and resolution to resist patterns obtained therefrom, and gives particularly excellent pattern shape and excellent line edge roughness.
摘要翻译：本发明提供了一种化学扩增型正型抗蚀剂组合物，其包含（A）树脂，其包含（i）5〜50摩尔％的式（I）的结构单元，（ii）5〜50摩尔％式（II）和（iii）的结构单元为选自由式（III）和（IV）的结构单元组成的组中的至少一种为5至59摩尔％，和（B）酸产生剂。本发明的组合物适用于使用ArF，KrF等的准分子激光光刻法，并且显示出各种优异的抗蚀剂能力，具体地说，提供更好的有效灵敏度和分辨率以抵抗由其获得的图案，并且具有特别优异的图案形状和优异的线边缘粗糙度。

3. 发明授权

US07625689B2 Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US07625689B2
公开(公告)日：2009-12-01
申请号：US11303925
申请日：2005-12-19
申请人： Ichiki Takemoto , Satoshi Yamaguchi , Hiromu Sakamoto
发明人： Ichiki Takemoto , Satoshi Yamaguchi , Hiromu Sakamoto
IPC分类号： G03C1/00 , C07C69/74
CPC分类号： G03F7/0045 , C07C67/11 , C07C67/14 , C07C69/75 , C07C69/753 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/04 , G03F7/0397
摘要： The present invention provides a chemically amplified positive resist composition comprising (i) a polymer which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, (ii) an acid generator, and (iii) a compound of the formula (I). The present invention also provides an ester derivative useful as a component of the chemically amplified positive resist composition, and process for producing the ester derivative.
摘要翻译：本发明提供了一种化学放大正性抗蚀剂组合物，其包含（i）在碱性水溶液中不溶或难溶于但在酸性溶液中溶于碱水溶液的聚合物，（ii）酸产生剂，和（iii）式（I）的化合物。本发明还提供可用作化学增幅正型抗蚀剂组合物的成分的酯衍生物，以及酯衍生物的制造方法。

4. 发明申请

US20100279226A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20100279226A1
公开(公告)日：2010-11-04
申请号：US12810793
申请日：2008-12-22
申请人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
发明人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： H01L21/0275 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
摘要翻译：本发明的目的是提供一种制造抗蚀剂图案的方法，其中可以形成极细和高精度的抗蚀剂图案，该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的，双重图案化方法抗蚀剂处理方法包括：通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含树脂（A），光酸产生剂（B）和交联剂（C），树脂（A）具有酸不稳定基团，在碱性水溶液中不溶或难溶，但通过酸的作用使其溶于碱水溶液中; 预烘烤曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。

5. 发明申请

US20060160017A1 Chemically amplified positive resist composition 失效
公开(公告)号：US20060160017A1
公开(公告)日：2006-07-20
申请号：US11303925
申请日：2005-12-19
申请人： Ichiki Takemoto , Satoshi Yamaguchi , Hiromu Sakamoto
发明人： Ichiki Takemoto , Satoshi Yamaguchi , Hiromu Sakamoto
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , C07C67/11 , C07C67/14 , C07C69/75 , C07C69/753 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/04 , G03F7/0397
摘要： The present invention provides a chemically amplified positive resist composition comprising (i) a polymer which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, (ii) an acid generator, and (iii) a compound of the formula (I). The present invention also provides an ester derivative useful as a component of the chemically amplified positive resist composition, and process for producing the ester derivative.

6. 发明授权

US07998656B2 Chemically amplified positive resist composition 有权
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US07998656B2
公开(公告)日：2011-08-16
申请号：US12536239
申请日：2009-08-05
申请人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
发明人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising: a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and an acid generator.
摘要翻译：本发明提供一种化学放大阳性组合物，其包含：包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基， Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1的整数 3，n表示0〜3的整数，酸产生剂。

7. 发明申请

US20100035180A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION 有权
标题翻译：化学放大正电阻组合物
公开(公告)号：US20100035180A1
公开(公告)日：2010-02-11
申请号：US12536239
申请日：2009-08-05
申请人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
发明人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising: a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and an acid generator.
摘要翻译：本发明提供一种化学放大阳性组合物，其包含：包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基， Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1的整数 3，n表示0〜3的整数，酸产生剂。

8. 发明授权

US09176378B2 Resist composition and method for producing resist pattern 有权
标题翻译：抗蚀剂组合物和抗蚀剂图案的制造方法
公开(公告)号：US09176378B2
公开(公告)日：2015-11-03
申请号：US13441185
申请日：2012-04-06
申请人： Koji Ichikawa , Takahiro Yasue , Satoshi Yamaguchi
发明人： Koji Ichikawa , Takahiro Yasue , Satoshi Yamaguchi
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： A resist composition of the invention includes: (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1, R2, m, n, Q1, Q2, L1, ring W1 and Z+ are defined in the specification.
摘要翻译：本发明的抗蚀剂组合物包括：（A）在碱性水溶液中不溶或难溶的树脂，但是通过酸作用而溶于碱性水溶液中的树脂，（B）由式（II）表示的酸发生剂）和（D）由式（I）表示的化合物，其中R1，R2，m，n，Q1，Q2，L1，环W1和Z +在说明书中定义。

9. 发明授权

US09128373B2 Resist composition and method for producing resist pattern 有权
标题翻译：抗蚀剂组合物和抗蚀剂图案的制造方法
公开(公告)号：US09128373B2
公开(公告)日：2015-09-08
申请号：US13441035
申请日：2012-04-06
申请人： Koji Ichikawa , Takahiro Yasue , Satoshi Yamaguchi
发明人： Koji Ichikawa , Takahiro Yasue , Satoshi Yamaguchi
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： A resist composition includes; (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having an acid-labile group; and (D) a compound represented by the formula (I), wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.
摘要翻译：抗蚀剂组合物包括：（A）在碱性水溶液中不溶或难溶的树脂，但是通过酸的作用变得可溶于碱性水溶液，（B）具有酸不稳定基团的酸发生剂; 和（D）式（I）表示的化合物，其中R 1和R 2各自独立地表示C1〜C12烃基，C1〜C6烷氧基，C2〜C7酰基，C2〜C7酰氧基 C2-C7烷氧基羰基，硝基或卤素原子; m和n独立地表示0〜4的整数。

10. 发明授权

US08971401B2 Image decoding device 有权
标题翻译：图像解码装置
公开(公告)号：US08971401B2
公开(公告)日：2015-03-03
申请号：US13246503
申请日：2011-09-27
申请人： Satoshi Yamaguchi
发明人： Satoshi Yamaguchi
IPC分类号： H04B1/66 , H04N19/436 , H04N19/11 , H04N19/44
CPC分类号： H04N19/436 , H04N19/11 , H04N19/44
摘要： An image decoding device for processing an input bit stream containing encoded data obtained by encoding a moving picture using intra-frame prediction, includes a stream divider configured to divide the input bit stream into a plurality of sub-streams, and a plurality of image decoders each configured to decode the corresponding one of the plurality of sub-streams, thereby outputting images. The stream divider divides the input bit stream so that the plurality of sub-streams each contain the encoded data corresponding to one or more prediction units, where macroblocks of the moving picture each include a plurality of the prediction units for the intra-frame prediction.
摘要翻译：一种用于处理包含通过使用帧内预测对运动图像进行编码获得的编码数据的输入比特流的图像解码装置，包括：流分配器，被配置为将输入比特流划分为多个子流，以及多个图像解码器每个被配置为对多个子流中的相应一个子流进行解码，从而输出图像。流分配器分割输入比特流，使得多个子流各自包含对应于一个或多个预测单元的编码数据，其中运动图像的宏块各自包括用于帧内预测的多个预测单元。

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