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    • 1. 发明授权
    • Edge rings for electrostatic chucks
    • 静电卡盘的边缘环
    • US08469368B2
    • 2013-06-25
    • US12540186
    • 2009-08-12
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • B23B31/28
    • H01L21/6831H01L21/68735Y10T279/23
    • A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.
    • 用于静电卡盘的公开的装置被配置为将基板保持在等离子体环境中包括边缘环,该边缘环被配置成与陶瓷顶部件,基板的部分接触,或者通过一个 多个引脚和引脚插槽。 边缘环进一步构造成与陶瓷顶部件同心。 在一个实施例中,边缘环包括具有边缘台阶的内边缘,其边缘台阶布置成在边缘环和陶瓷顶部件的外周边之间提供机械联接。 边缘环还包括外边缘和位于内边缘和外边缘之间的平坦部分。 当边缘环绕陶瓷顶片的外周放置并平行于基底时,平坦部分布置成水平的。
    • 2. 发明申请
    • EDGE RINGS FOR ELECTROSTATIC CHUCKS
    • 用于静电切割机的边缘环
    • US20100044974A1
    • 2010-02-25
    • US12540186
    • 2009-08-12
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • B23B31/28
    • H01L21/6831H01L21/68735Y10T279/23
    • A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.
    • 用于静电卡盘的公开的装置被配置为将基板保持在等离子体环境中包括边缘环,该边缘环被配置成与陶瓷顶部件,基板的部分接触,或者通过一个 多个引脚和引脚插槽。 边缘环还被构造成与陶瓷顶部件同心。 在一个实施例中,边缘环包括具有边缘台阶的内边缘,其边缘台阶布置成在边缘环和陶瓷顶部件的外周边之间提供机械联接。 边缘环还包括外边缘和位于内边缘和外边缘之间的平坦部分。 当边缘环绕陶瓷顶片的外周放置并平行于基底时,平坦部分布置成水平的。
    • 5. 发明授权
    • Local plasma confinement and pressure control arrangement and methods thereof
    • 局部血浆限制和压力控制布置及其方法
    • US08900398B2
    • 2014-12-02
    • US12872982
    • 2010-08-31
    • Rajinder DhindsaMichael C. KelloggBabak KadkhodayanAndrew D. Bailey, III
    • Rajinder DhindsaMichael C. KelloggBabak KadkhodayanAndrew D. Bailey, III
    • H01L21/3065H01J37/32
    • H01J37/32642H01J37/32623
    • An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
    • 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环,该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽,其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环,该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制,使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。