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    • 10. 发明申请
    • SPIN TRANSISTOR
    • 旋转晶体管
    • WO1997041606A1
    • 1997-11-06
    • PCT/GB1997001167
    • 1997-04-28
    • ISIS INNOVATION LIMITEDGREGG, John, FrancisSPARKS, Patricia, Dresel
    • ISIS INNOVATION LIMITED
    • H01L43/00
    • H01L29/66984
    • The spin transistor is a hybrid magnetic/semiconductor transistor in which a magnetically controllable barrier (5) is provided between a semiconductor base (4) and collector (3) to control the diffusion of charge carriers to the collector (3). With the spin transistor the charge carrier populations are distinguished by the direction of the spin or magnetic moment of the carriers instead of the electronic charge. A spin injector (1) is used to spin polarise the charge carrier population so that the population has a selected magnetic moment which population may or may not be enabled to flow to the collector via the magnetic barrier. The spin transistor utilises the electronic characteristics of a conventional semiconductor transistor in combination with a carrier flow controlled by magnetic moment to maximise gain.
    • 自旋晶体管是混合磁/半导体晶体管,其中在半导体基底(4)和集电极(3)之间设置有可控制的屏障(5),以控制载流子到集电极(3)的扩散。 对于自旋晶体管,载流子群体通过载流子的自旋或磁矩的方向而不是电子电荷来区分。 自旋注入器(1)用于使电荷载体群旋转极化,使得群体具有选定的磁矩,其中群体可能或可能不能通过磁屏障流向收集器。 旋转晶体管利用常规半导体晶体管的电子特性与由磁矩控制的载流相结合,以使增益最大化。