专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009061698A1 STRUCTURE AND METHOD FOR COMPACT LONG-CHANNEL FETS 审中-公开
标题翻译：紧凑型长通道FET的结构和方法
公开(公告)号：WO2009061698A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/082226
申请日：2008-11-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DORIS, Bruce, B. , RADENS, Carl, J. , STAMPER, Anthony, K.
发明人： DORIS, Bruce, B. , RADENS, Carl, J. , STAMPER, Anthony, K.
IPC分类号： H01L29/00
CPC分类号： H01L29/1037 , H01L29/6659 , H01L29/66621
摘要： A compact semiconductor structure including at least one FET located upon and within a surface of a semiconductor substrate (12) in which the at least one FET includes a long channel length and/or a wide channel width (11) and a method of fabricating the same are provided. In some embodiments, the ordered, nanosized pattern is oriented in a direction that is perpendicular to the current flow. In such an embodiment, the FET has a long channel length. In other embodiments, the ordered, nanosized pattern is oriented in a direction that is parallel to that of the current flow. In such an embodiment, the FET has a wide channel width. In yet another embodiment, one ordered, nanosized pattern is oriented in a direction perpendicular to the current flow, while another ordered, nanosized pattern is oriented in a direction parallel to the current flow. In such an embodiment, a FET having a long channel length and wide channel width is provided.
摘要翻译：一种紧凑的半导体结构，包括位于半导体衬底（12）的表面之上和之内的至少一个FET，其中所述至少一个FET包括长沟道长度和/或宽沟道宽度（11），以及制造同样提供。在一些实施例中，有序的纳米尺寸图案在垂直于电流的方向上取向。在这样的实施例中，FET具有长的沟道长度。在其他实施例中，有序的纳米尺寸图案在平行于电流流动的方向上取向。在这样的实施例中，FET具有宽的通道宽度。在另一个实施例中，一个有序的纳米尺寸图案在垂直于电流的方向上定向，而另一个有序的纳米尺寸图案在平行于电流的方向上取向。在这样的实施例中，提供具有长沟道长度和宽沟道宽度的FET。

2. 发明申请

WO2009120587A1 INDUCTOR HAVING OPENING ENCLOSED WITHIN CONDUCTIVE LINE AND RELATED METHOD 审中-公开
标题翻译：具有导电线中开放的电感器及相关方法
公开(公告)号：WO2009120587A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/037738
申请日：2009-03-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ERTURK, Mete , GILLIS, John, D. , GRANT, Casey, J. , SCAGNELLI, David , STAMPER, Anthony, K.
发明人： ERTURK, Mete , GILLIS, John, D. , GRANT, Casey, J. , SCAGNELLI, David , STAMPER, Anthony, K.
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F17/04 , H01F27/2847 , H01F41/04 , H01F41/041 , H01F41/045 , H01F2017/0053 , H01F2017/0073 , H01F2017/046 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L28/10 , H01L2924/0002 , H01L2924/3011 , Y10T29/49004 , Y10T29/4902 , Y10T29/49069 , Y10T29/49073 , Y10T29/49156 , H01L2924/00
摘要： Embodiments of an inductor (100) including a conductive line (102 A, 102B) including at least one turn (104) and an opening (106) positioned within an interior of a region (122) of the conductive line are disclosed. Embodiments of a related method of designing the inductor are also disclosed.
摘要翻译：公开了一种包括导线（102A，102B）的电感器（100）的实施例，该导线包括位于导线的区域（122）内部的至少一个匝（104）和开口（106）。还公开了设计电感器的相关方法的实施例。

3. 发明申请

WO2013012544A1 SAW FILTER HAVING PLANAR BARRIER LAYER AND METHOD OF MAKING 审中-公开
标题翻译：具有平面屏障层的SAW滤波器及其制造方法
公开(公告)号：WO2013012544A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/044908
申请日：2012-06-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ADKISSON, James, W. , CANDRA, Panglijen , DUNBAR, Thomas, J. , GAMBINO, Jeffrey, P. , JAFFE, Mark, D. , STAMPER, Anthony, K. , WOLF, Randy, L.
发明人： ADKISSON, James, W. , CANDRA, Panglijen , DUNBAR, Thomas, J. , GAMBINO, Jeffrey, P. , JAFFE, Mark, D. , STAMPER, Anthony, K. , WOLF, Randy, L.
IPC分类号： H03H9/64
CPC分类号： H03H9/14538 , H03H3/08
摘要： Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate (110; Fig 3); a planar barrier layer (120) disposed above the piezoelectric substrate, and at least one conductor buried (130) in the piezoelectric substrate and the planar barrier layer.
摘要翻译：本文公开了一种表面声波（SAW）滤波器及其制造方法。 SAW滤波器包括压电基片（110;图3）; 设置在所述压电基板上方的平面阻挡层（120），以及在所述压电基板和所述平面阻挡层中埋设的至少一个导体（130）。

4. 发明申请

WO2012177304A2 MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHOD OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
标题翻译：微电子机械系统（MEMS）及相关执行机构的制造，制造和设计结构的方法
公开(公告)号：WO2012177304A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/029005
申请日：2012-03-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , JAHNES, Christopher, V. , STAMPER, Anthony, K.
发明人： JAHNES, Christopher, V. , STAMPER, Anthony, K.
IPC分类号： H02N1/00 , H05K13/00
CPC分类号： H01H59/0009 , B81B3/001 , B81B7/0006 , B81B2201/016 , B81B2203/0118 , B81B2203/04 , B81C1/0015 , B81C1/00293 , B81C2203/0145 , G06F17/5045 , G06F17/5068 , H01H1/0036 , H01H2001/0057 , Y10T29/49121
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes (105') in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.
摘要翻译：提供微机电系统（MEMS）结构，制造方法和设计结构。形成MEMS结构的方法包括在基板上形成固定的致动器电极（115）和接触点。该方法还包括在固定的致动器电极和接触点上形成MEMS光束（100）。该方法还包括形成与固定致动器电极的部分对准的致动器电极阵列（105'），其尺寸和尺寸被确定为防止MEMS梁在重复循环之后塌陷在固定的致动器电极上。致动器电极阵列形成为与MEMS光束的下侧和固定致动器电极的表面中的至少一个直接接触。

5. 发明申请

WO2007115146A2 PROTECTION AGAINST CHARGING DAMAGE IN HYBRID ORIENTATION TRANSISTORS 审中-公开
标题翻译：在混合方向晶体管中对充电损害的保护
公开(公告)号：WO2007115146A2
公开(公告)日：2007-10-11
申请号：PCT/US2007/065604
申请日：2007-03-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HOOK, Terence, B. , MOCUTA, Anda, C. , SLEIGHT, Jeffrey, W. , STAMPER, Anthony, K.
发明人： HOOK, Terence, B. , MOCUTA, Anda, C. , SLEIGHT, Jeffrey, W. , STAMPER, Anthony, K.
IPC分类号： A61K31/203 , A61K9/127
CPC分类号： H01L21/84 , H01L21/823807 , H01L21/823878 , H01L27/0251 , H01L27/0629 , H01L27/1203 , H01L27/1207
摘要： A chip includes a CMOS structure having a bulk device (20) disposed in a first region (24) of a semiconductor substrate (50) in conductive communication with an underlying bulk region (18) of the substrate, the first region (24) and the bulk region (20) having a first crystal orientation. A SOI device (10) is disposed in a semiconductor-on-insulator ("SOI") layer (14) separated from the bulk region of the substrate by a buried dielectric layer (16), the SOI layer having a different crystal orientation from the first crystal orientation. In one example, the bulk device includes a p-type field effect transistor ("PFET") and the SOI device includes an n-type field effect transistor ("NFET") device. Alternatively, the bulk device can include an NFET and the SOI device can include a PFET. When the SOI device has a gate conductor (11) in conductive communication with a gate conductor (21) of the bulk device, charging damage can occur to the SOI device, except for the presence of diodes in reverse-biased conductive communication with the bulk region. The diodes are operable to conduct a discharge current to the bulk region when either a voltage on the gate conductor or a voltage on the source or drain region of the SOI device exceeds a diode's breakdown voltage.
摘要翻译：芯片包括CMOS结构，其具有设置在半导体衬底（50）的第一区域（24）中的本体器件（20），该半导体衬底（50）与衬底的下伏体区域（18）导通连通，第一区域（24）和本体区域（20）具有第一晶体取向。 SOI器件（10）设置在通过掩埋介电层（16）与衬底的本体区域分离的绝缘体上半导体（“SOI”）层14中，SOI层具有不同的晶体取向第一个晶体取向。在一个示例中，体器件包括p型场效应晶体管（“PFET”），并且SOI器件包括n型场效应晶体管（“NFET”）器件。或者，体器件可以包括NFET，并且SOI器件可以包括PFET。当SOI器件具有与本体器件的栅极导体（21）导电连通的栅极导体（11）时，SOI器件可能会发生充电损坏，除了存在与体积反向偏置导电连通的二极管地区。当栅极导体上的电压或SOI器件的源极或漏极区域上的电压超过二极管的击穿电压时，二极管可操作以将放电电流传导到体区。

6. 发明申请

WO2005117085A2 METHOD AND FORMING A SEMICONDUCTOR DEVICE HAVING AIR GAPS AND THE STRUCTURE SO FORMED 审中-公开
标题翻译：方法和形成具有空气GAPS和形成的结构的半导体器件
公开(公告)号：WO2005117085A2
公开(公告)日：2005-12-08
申请号：PCT/US2005/018050
申请日：2005-05-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION? , STAMPER, Anthony, K.
发明人： STAMPER, Anthony, K.
IPC分类号： H01L21/311
CPC分类号： H01L21/7682 , H01L21/31116 , H01L21/76807 , H01L28/87
摘要： A method of forming a semiconductor device, and the device so formed. Depositing alternating layers of a first dielectric material (12a-f) and a second dielectric material (14a-f), wherein the first and second dielectric materials are selectively etchable at different rates. Forming a first feature (22, 24) within the alternating layers of dielectric material. Selectively etching the alternating layers of dielectric material to remove at least a portion (26) of the first dielectric material in each layer having the first dielectric material and leaving the second dielectric material as essentially unetched.
摘要翻译：形成半导体器件的方法和如此形成的器件。沉积第一介电材料（12a-f）和第二介电材料（14a-f）的交替层，其中所述第一和第二介电材料可以以不同的速率被选择性地蚀刻。在电介质材料的交替层内形成第一特征（22,24）。选择性地蚀刻介电材料的交替层以去除具有第一介电材料的每个层中的第一介电材料的至少一部分（26），并使第二介电材料基本上未被蚀刻。

7. 发明申请

WO2013070294A1 INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE 审中-公开
标题翻译：具有单晶光束的集成半导体器件，制造方法和设计结构
公开(公告)号：WO2013070294A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/050743
申请日：2012-08-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HARAME, David, L. , STAMPER, Anthony, K.
发明人： HARAME, David, L. , STAMPER, Anthony, K.
IPC分类号： H03H9/54
CPC分类号： B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam (18) from a silicon layer (14) on an insulator (12). The method further includes providing a coating of insulator material (22) over the single crystalline beam. The method further includes forming a via (34a) through the insulator material exposing a wafer (10) underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material (36) in the via and over the insulator material. The method further includes providing a lid (38) on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity (42a) above the single crystalline beam and a lower cavity (42b) in the wafer, below the single crystalline beam.
摘要翻译：提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。该方法包括从绝缘体（12）上的硅层（14）形成单晶束（18）。该方法还包括在单晶束上提供绝缘体材料（22）的涂层。该方法还包括通过暴露出绝缘体下方的晶片（10）的绝缘体材料形成通孔（34a）。绝缘体材料保留在单晶束上。该方法还包括在通孔和绝缘体材料上提供牺牲材料（36）。该方法还包括在牺牲材料上提供盖（38）。该方法还包括在单结晶体束下通过盖子将牺牲材料和晶片的一部分排出，以在晶片上方形成上空腔（42a），并在晶片的下方形成下空腔（42b）单晶束。

8. 发明申请

WO2012177371A1 MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
标题翻译：微电子机械系统（MEMS）及相关执行机构的制造，制造和设计结构的方法
公开(公告)号：WO2012177371A1
公开(公告)日：2012-12-27
申请号：PCT/US2012/040339
申请日：2012-06-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , JAHNES, Christopher, V. , STAMPER, Anthony, K.
发明人： JAHNES, Christopher, V. , STAMPER, Anthony, K.
IPC分类号： H01L29/84
CPC分类号： B81B3/001 , B81B3/0021 , B81B3/0059 , B81B3/0072 , B81B7/0006 , B81B7/008 , B81B2201/016 , B81B2203/0163 , B81C1/00015 , B81C1/0015 , B81C1/00476 , G06F17/5045 , H01L41/094 , H01L41/1134 , H01L41/1138 , Y10T29/49002 , Y10T29/49005 , Y10T29/4908 , Y10T29/49121
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer (14) on a substrate (10) comprising actuator electrodes (115) and a contact electrode (110). The method further includes forming a MEMS beam (100) above the wiring layer (14). The method further includes forming at least one spring (200) attached to at least one end of the MEMS beam (100). The method further includes forming an array of mini -bumps (105') between the wiring layer (14) and the MEMS beam (100).
摘要翻译：提供微机电系统（MEMS）结构，制造方法和设计结构。形成MEMS结构的方法包括在包括致动器电极（115）和接触电极（110）的基板（10）上形成布线层（14）。该方法还包括在布线层（14）上方形成MEMS光束（100）。该方法还包括形成附接到MEMS梁（100）的至少一端的至少一个弹簧（200）。所述方法还包括在所述布线层（14）和所述MEMS光束（100）之间形成微型凸起（105'）的阵列。

9. 发明申请

WO2011090852A3 THROUGH SILICON VIA LITHOGRAPHIC ALIGNMENT AND REGISTRATION 审中-公开
公开(公告)号：WO2011090852A3
公开(公告)日：2011-07-28
申请号：PCT/US2011/020913
申请日：2011-01-12
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HERRIN, Russell, T. , LINDGREN, Peter, J. , SPROGIS, Edmund, J. , STAMPER, Anthony, K.
发明人： HERRIN, Russell, T. , LINDGREN, Peter, J. , SPROGIS, Edmund, J. , STAMPER, Anthony, K.
IPC分类号： H01L21/768
摘要： A method of manufacturing an integrated circuit structure forms a first opening in a substrate (100; Figure 1) and lines the first opening with a protective liner. (102) The method deposits a material into the first opening (104) and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. (108) The method removes the material from the first opening through the second opening in the protective material. (110) The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.

10. 发明申请

WO2007084982A3 DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE 审中-公开
公开(公告)号：WO2007084982A3
公开(公告)日：2007-07-26
申请号：PCT/US2007/060767
申请日：2007-01-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , COOLBAUGH, Douglas, D. , DOWNES, Keith, E. , LINDGREN, Peter, J. , STAMPER, Anthony, K.
发明人： COOLBAUGH, Douglas, D. , DOWNES, Keith, E. , LINDGREN, Peter, J. , STAMPER, Anthony, K.
IPC分类号： H01L23/48
摘要： A method and semiconductor device. In the method, at least one partial via (26) is etched in a stacked structure and a border (32) is formed about the at least one partial via (26). The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer (22).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式