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1. 发明申请

WO2013058909A1 FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET STRUCTURE 审中-公开
标题翻译： FINFET结构和在FinFET结构中调节阈值电压的方法
公开(公告)号：WO2013058909A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/055452
申请日：2012-09-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CARTIER, Eduard, A. , GREENE, Brian, J. , GUO, Dechao , WANG, Gan , WANG, Yanfeng , WONG, Keith, K., H.
发明人： CARTIER, Eduard, A. , GREENE, Brian, J. , GUO, Dechao , WANG, Gan , WANG, Yanfeng , WONG, Keith, K., H.
IPC分类号： H01L21/00
CPC分类号： H01L29/785 , H01L21/02323 , H01L21/28017 , H01L27/1211 , H01L29/6656 , H01L29/66795
摘要： FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide. A structure comprises a plurality of fin structures patterned from a semiconductor film. The structure further comprises a gate stack wrapping around the plurality of fin structures. The gate stack includes a high-k dielectric material subjected to a lateral oxygen diffusion to induce Vt shift of the gate stack.
摘要翻译：公开了FinFET结构和制造FinFET结构的方法。该方法包括在FinFET结构的栅极堆叠上执行氧退火处理以引起Vt偏移。氧退火工艺在侧壁下拉和硅化后进行。一种结构包括从半导体膜图案化的多个翅片结构。该结构还包括围绕多个翅片结构缠绕的栅极堆叠。栅堆叠包括经受横向氧扩散以引起栅叠层的Vt偏移的高k电介质材料。

2. 发明申请

WO2012024037A2 PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE 审中-公开
标题翻译：使用Vt-SHIFT效应的可编程FET和制造方法
公开(公告)号：WO2012024037A2
公开(公告)日：2012-02-23
申请号：PCT/US2011/043855
申请日：2011-07-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CARTIER, Eduard, A. , LIANG, Qingqing , LIANG, Yue , WANG, Yanfeng
发明人： CARTIER, Eduard, A. , LIANG, Qingqing , LIANG, Yue , WANG, Yanfeng
IPC分类号： H01L29/68 , H01L21/336 , G06F9/45
CPC分类号： H01L29/408 , G06F17/5045 , H01L21/28088 , H01L21/28176 , H01L21/28185 , H01L21/324 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate contact of the high-k dielectric metal gate structure to raise a temperature of a metal forming a gate stack. The temperature is raised beyond a Vt shift temperature threshold for providing an on-state.
摘要翻译：使用高k电介质金属栅Vt移位效应提供可编程场效应晶体管（FET）及其制造方法。控制高k电介质金属栅极结构中的Vt漂移的方法包括向高k电介质金属栅极结构的栅极接触施加电流以升高形成栅叠层的金属的温度。温度升高超过Vt转换温度阈值以提供导通状态。

3. 发明申请

WO2011151183A1 HIGH-K METAL GATE STACK 审中-公开
标题翻译：高K金属盖板
公开(公告)号：WO2011151183A1
公开(公告)日：2011-12-08
申请号：PCT/EP2011/058086
申请日：2011-05-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , GUO, Dechao , OLDIGES, Philip , CHEN, Tze-Chiang , WANG, Yanfeng
发明人： GUO, Dechao , OLDIGES, Philip , CHEN, Tze-Chiang , WANG, Yanfeng
IPC分类号： H01L21/28 , H01L29/51 , H01L29/49
CPC分类号： H01L29/517 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/51 , H01L29/513 , H01L29/518
摘要： A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer interfacial layer; a high-k dielectric layer formed over the bi-layer interfacial layer; a metal gate conductor layer formed over the high-k dielectric layer; and a work function adjusting dopant species diffused within the high-k dielectric layer and within the nitrogen deficient, oxygen rich second dielectric layer, and wherein the nitrogen rich first dielectric layer serves to separate the work function adjusting dopant species from the semiconductor substrate surface.
摘要翻译：用于场效应晶体管（FET）器件的栅极堆叠结构包括形成在半导体衬底表面上的富氮第一介电层; 形成在富氮第一介电层上的缺氮富氧的第二电介质层，第一和第二电介质层组合形成双层界面层; 形成在双层界面层上的高k电介质层; 形成在高k电介质层上的金属栅极导体层; 以及调节掺杂物质的功函数，其在所述高k电介质层内和所述缺氮富氧的第二电介质层内扩散，并且其中所述富氮第一介电层用于将所述功函数调节掺杂剂物质与所述半导体衬底表面分离。

4. 发明申请

WO2014159391A1 DIELECTRIC VOID ETCHED IN FINFET SACRIFICIAL LAYER 审中-公开
标题翻译：在FINFET SACFIFICIAL层中刻蚀电介质
公开(公告)号：WO2014159391A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/023379
申请日：2014-03-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： WANG, Yanfeng , GUO, Dechao , LU, Darsen , OLDIGES, Philip , WANG, Gan , WANG, Xin
IPC分类号： H01L21/335 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66477 , H01L21/823481 , H01L21/823878 , H01L29/66545 , H01L29/66772 , H01L29/66795 , H01L29/78 , H01L29/7842 , H01L29/7848 , H01L29/785
摘要： A finFET and method of fabrication are disclosed. A sacrificial layer is formed on a bulk semiconductor substrate. A top semiconductor layer (such as silicon) is disposed on the sacrificial layer. The bulk semiconductor substrate is recessed in the area adjacent to the transistor gate and a stressor layer is formed in the recessed area. The sacrificial layer is selectively removed and replaced with an insulator, such as a flowable oxide. The insulator provides isolation between the transistor channel and the bulk substrate without the use of dopants.
摘要翻译：公开了一种finFET和制造方法。牺牲层形成在体半导体衬底上。顶层半导体层（如硅）被设置在牺牲层上。体半导体衬底凹陷在与晶体管栅极相邻的区域中，并且在凹陷区域中形成应力层。选择性地去除牺牲层并用诸如可流动氧化物的绝缘体代替。绝缘体在不使用掺杂剂的情况下提供了晶体管沟道和体衬底之间的隔离。

5. 发明申请

WO2013063351A1 THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS 审中-公开
标题翻译：用于薄体MOSFET的阈值电压调整
公开(公告)号：WO2013063351A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/062048
申请日：2012-10-26
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： BRODSKY, Mary, Jane , CAI, Ming , GUO, Dechao , HENSON, William, K. , NARASIMHA, Shreesh , LIANG, Yue , SONG, Liyang , WANG, Yanfeng , YEH, Chun-chen
IPC分类号： H01L29/786
CPC分类号： H01L29/66803
摘要： A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor. Methods to fabricate a FinFET transistor are also disclosed. Also disclosed is a planar transistor having a Carbon-implanted well where the concentration of the Carbon within the well is selected to establish a desired voltage threshold of the transistor.
摘要翻译：一种结构包括基板; 设置在所述衬底上的晶体管，所述晶体管包括由碳注入的由硅构成的鳍; 以及覆盖限定晶体管的沟道的鳍片的一部分上的栅极电介质层和栅极金属层。在该结构中，选择鳍内的碳浓度以建立晶体管的期望电压阈值。还公开了制造FinFET晶体管的方法。还公开了具有碳注入阱的平面晶体管，其中选择阱内的碳浓度以建立晶体管的期望电压阈值。

6. 发明申请

WO2014003933A1 COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE 审中-公开
标题翻译：用于降低闸门泄漏的复合高K栅电介质堆叠
公开(公告)号：WO2014003933A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/042401
申请日：2013-05-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Singapore PTE. LTD.
发明人： BRODSKY, Maryjane , CHUDZIK, Michael, P. , DAI, Min , SHEPARD, Joseph, F. , SIDDIQUI, Shahab , WANG, Yanfeng , LIU, Jinping
IPC分类号： H01L29/78 , H01L21/336 , H01L21/31
CPC分类号： H01L21/02321 , H01L21/28194 , H01L21/3115 , H01L21/823462 , H01L29/513 , H01L29/517
摘要： A composite high dielectric constant (high-k) gate dielectric (31A, 32A, 34A) includes a stack of a doped high-k gate dielectric (32A) and an undoped high-k gate dielectric (34A). The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer (32L) and a dopant metal layer (133L) and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer (34A). The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.
摘要翻译：复合高介电常数（high-k）栅极电介质（31A，32A，34A）包括掺杂的高k栅极电介质（32A）和未掺杂的高k栅极电介质（34A）的堆叠。可以通过提供第一高k电介质材料层（32L）和掺杂剂金属层（133L）的叠层来形成掺杂的高k栅极电介质，并且使堆叠退火以引起掺杂剂金属扩散到第一高k -k电介质材料层。通过随后沉积第二高k电介质材料层（34A）形成未掺杂的高k栅极电介质。复合高k栅极电介质可以提供增加的栅极 - 漏极氧化物厚度，而不增加反转氧化物厚度。

7. 发明申请

WO2008036792A2 METHOD OF OPTIMIZING THE TREATMENT OF PHILADELPHIA-POSITIVE LEUKEMIA WITH ABL TYROSINE KINASE INHIBITORS 审中-公开
标题翻译： ABL酪氨酸激酶抑制剂优化治疗费城阳性白血病的方法
公开(公告)号：WO2008036792A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/078978
申请日：2007-09-20
申请人： NOVARTIS AG , GATHMANN, Insa , MAHON, Francois-Xavier , MOLIMARD, Mathieu , PICARD, Stéphane , WANG, Yanfeng
发明人： GATHMANN, Insa , MAHON, Francois-Xavier , MOLIMARD, Mathieu , PICARD, Stéphane , WANG, Yanfeng
IPC分类号： A61K49/00 , A61P35/02 , A61K31/00 , A61K31/506
CPC分类号： A61K31/506 , A61K31/00 , G01N33/49 , G01N2800/52
摘要： The present invention provides a method of treating Philadelphia positive (Ph+) leukemia, such as Philadelphia chromosome positive acute lymphoblastic leukemia (Ph+ ALL) or chronic myeloid leukemia (CML), in a human patient population comprising the steps of (a) administering a predetermined fixed amount of a Bcr-Abl tyrosine kinase inhibitor, such as Imatinib, or a pharmaceutically acceptable salt thereof to human patients suffering from a Ph+ leukemia, (b) collecting at least one blood sample from said patients, (c) determining the plasma trough level (Cmin) of the Bcr-Abl tyrosine kinase inhibitor or of a metabolite thereof as well as the MMR rates, (d) assessing a discrimination potential of trough plasma concentrations for MMR and identifying a Cmin threshold for optimal sensitivity and specificity and (e) adjusting the dose of the inhibitor of the Bcr-Abl tyrosine kinase or a pharmaceutically acceptable salt thereof applied to the individual patients from said patient population and, optionally, future patients suffering from a Ph+ leukemia in a manner that a Cmin is achieved in each single patient equal to or higher than the Cmin threshold obtained under step (d).
摘要翻译：本发明提供了治疗患者群中费城阳性（Ph +）白血病（例如费城染色体阳性急性淋巴细胞白血病（Ph + ALL）或慢性粒细胞白血病（CML））的方法，（a）将预定固定量的Bcr-Abl酪氨酸激酶抑制剂如伊马替尼或其药学上可接受的盐给予患有Ph +白血病的人类患者，（b）从所述患者中收集至少一种血液样品，（c）确定Bcr-Abl酪氨酸激酶抑制剂或其代谢物的血浆谷值水平（Cmin）以及MMR率，（d）评估MMR的谷底血浆浓度的辨别潜力并鉴定Cmin阈值以获得最佳灵敏度和特异性，和（e）调节应用于所述患者的个体患者的Bcr-Abl酪氨酸激酶或其药学上可接受的盐的抑制剂的剂量 nt群体以及任选患有Ph +白血病的未来患者，其方式为每个单个患者的Cmin达到等于或高于步骤（d）中获得的Cmin阈值。

8. 发明申请

WO2004095233A2 APPARATUS AND METHOD FOR DISTANCE EXTENSION OF FIBRE-CHANNEL OVER TRANSPORT 审中-公开
标题翻译：用于传输光纤通道的距离延伸的装置和方法
公开(公告)号：WO2004095233A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/008603
申请日：2004-03-22
申请人： CISCO TECHNOLOGY, INC. , NATARAJAN, Sriram , PRASAD, Sharat , DENG, Yu , WANG, Yanfeng
发明人： NATARAJAN, Sriram , PRASAD, Sharat , DENG, Yu , WANG, Yanfeng
IPC分类号： G06F
CPC分类号： H04L47/10 , H04J3/1617 , H04L47/30 , H04L47/39
摘要： The Fibre-Channel flow control mechanism is augmented to facilitate efficient data exchange between Fibre-Channel ports over extended distances. A supplemental buffer mechanism may be maintained as part of an interface to a transport network used to carry Fibre-Channel traffic. The transport network interface makes a remote Fibre-Channel port aware of the augmented local receiver buffer capacity by intercepting certain frames used in link establishment and substituting an enhanced buffer capacity for the local Fibre-Channel port's internal buffer capacity. This technique provides improved throughput and readily accommodates large distances and large frame sizes.

9. 发明申请

WO2010065433A1 METHOD OF OPTIMIZING THE TREATMENT OF PHILADELPHIA-POSITIVE LEUKEMIA WITH IMATINIB MESYLATE 审中-公开
标题翻译：利用肌醇六磷酸酯优化治疗菲律宾阳性淋巴细胞的方法
公开(公告)号：WO2010065433A1
公开(公告)日：2010-06-10
申请号：PCT/US2009/066045
申请日：2009-11-30
申请人： NOVARTIS AG , MEDVET SCIENCE PTY. LTD. , WANG, Yanfeng , KALEBIC, Thea , HUGHES, Timothy Peter , WHITE, Deborah
发明人： WANG, Yanfeng , KALEBIC, Thea , HUGHES, Timothy Peter , WHITE, Deborah
IPC分类号： A61K31/506 , A61K35/02
CPC分类号： A61K31/506
摘要： The present invention relates to a method of treating Philadelphia-positive leukemia (Ph+ leukemia), in a particular chronic myeloid leukemia (CML), in a human patient population. More specifically, the present invention pertains to a method of treating Ph+ leukemia, such as CML or Ph+ ALL, in a human patient suffering from Ph+ leukemia comprising the steps of (a) administering a predetermined fixed amount of Imatinib as a free base or in the form of a pharmaceutically acceptable salt thereof to the human patient, (b) collecting at least one blood sample from the patient, e.g. within the first 12 months of treatment, (c) determining the plasma trough level (Cmin) of Imatinib, (d) determining the OCT-1 Activity in the blood sample, and (e) adjusting the dose of Imatinib applied to the individual patient in a manner that an Imatinib Cmin value is achieved in the patient of at least 800 ng/mL, if in step (c) an Imatinib Cmin value of less than 800 ng/mL is found and in step (d) an OCT-1 Activity is found below 6.0 to 10.0 ng/200,000 cells..
摘要翻译：本发明涉及在人类患者群体中治疗特定慢性骨髓性白血病（CML）中的费城阳性白血病（Ph +白血病）的方法。更具体地，本发明涉及在患有Ph +白血病的人类患者中治疗Ph +白血病（例如CML或Ph + ALL）的方法，包括以下步骤：（a）施用预定的固定量的伊马替尼作为游离碱或其药学上可接受的盐的形式提供给人类患者，（b）从患者收集至少一种血液样品，在治疗的头12个月内，（c）确定伊马替尼的血浆谷值（Cmin），（d）确定血液样品中的OCT-1活性，和（e）调整施用于个体患者的伊马替尼剂量如果在步骤（c）中发现伊马替尼Cmin值小于800ng / mL，并且在步骤（d）中OCT-1 活动发现低于6.0至10.0ng / 20万个细胞。

10. 发明申请

WO2009039716A1 CAROTENOID FORMULATIONS AND USE THEREOF, AND FEEDS CONTAINING THE FORMULATION AND PROCESSES FOR THE PREPARATION OF THE FEEDS 审中-公开
标题翻译：含有制剂及其用途的饲料及其饲料，以及饲料的制备和方法
公开(公告)号：WO2009039716A1
公开(公告)日：2009-04-02
申请号：PCT/CN2008/000545
申请日：2008-03-19
申请人： ZHEJIANG MEDICINE CO., LTD. XINCHANG PHARMACEUTICAL FACTORY , SHAO, Bin , XU, Xinde , ZHOU, DI , WANG, Yanfeng , HONG, Yimin
发明人： SHAO, Bin , XU, Xinde , ZHOU, DI , WANG, Yanfeng , HONG, Yimin
IPC分类号： A23K1/16 , A23L1/275 , A61K47/06 , C07C403/24
CPC分类号： A23D9/007 , A23K20/179 , A23K40/30 , A23L5/44 , A61K9/10 , A61K47/14 , A61K47/44
摘要： A carotenoid formulation in oil suspensions, comprises a carotenoid with an average particle size of 10μm or less, an antioxidant and an edible oil. A feed contains the said carotenoid formulation, a method for preparing the feed and use of the carotenoid formulation as an additive of animal feeds, foods, cosmetics and/or pharmaceuticals. The active ingredients in the feed granules are homogeneously distributed in the feed granules, majority of which are substantially distributed inside the granules, to reduce the loss caused by oxidation on the surface.
摘要翻译：油悬浮液中的类胡萝卜素制剂包含平均粒度为10μm以下的类胡萝卜素，抗氧化剂和食用油。饲料含有所述类胡萝卜素制剂，一种制备饲料的方法和使用类胡萝卜素制剂作为动物饲料，食品，化妆品和/或药物的添加剂。进料颗粒中的活性成分均匀分布在进料颗粒中，其中大部分基本上分布在颗粒内，以减少由表面氧化引起的损失。

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