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1. 发明申请

WO2011151757A1 PRODUCING A MONO-CRYSTALLINE SHEET 审中-公开
标题翻译：生产单晶片
公开(公告)号：WO2011151757A1
公开(公告)日：2011-12-08
申请号：PCT/IB2011/052237
申请日：2011-05-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BJOERK, Mikael T. , RIEL, Heike E. , SCHMID, Heinz
发明人： BJOERK, Mikael T. , RIEL, Heike E. , SCHMID, Heinz
IPC分类号： C30B11/10 , C30B11/12 , C30B13/18 , C30B15/08 , H01L31/18
CPC分类号： C30B15/08 , C30B11/003 , C30B11/02 , C30B11/10 , C30B11/12 , C30B13/18 , C30B15/002 , C30B21/06 , C30B29/06 , C30B29/64 , H01L31/0312 , H01L31/036 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1032
摘要： A method for producing a mono-crystalline sheet (11), in particular a silicon sheet (11), comprises: providing at least two aperture elements (1, 2) forming a gap (3) in-between; providing a molten alloy (4) comprising silicon in the gap (3) between said at least two aperture elements (1, 2); providing a gaseous precursor medium (5) comprising silicon in the vicinity of the molten alloy (4); providing a silicon nucleation crystal (6) in the vicinity of the molten alloy (4); and bringing in contact said silicon nucleation crystal (6) and the molten alloy (4). A device (10, 20) for producing a mono-crystalline sheet (11), in particular a silicon sheet (11), comprises at least two aperture elements (1, 2) at a predetermined distance (D) from each other thereby forming a gap (3), and being adapted to be heated for holding a molten alloy (4) comprising silicon by surface tension in the gap (3) between the aperture elements (1,2 ); a means (15) for supplying a gaseous precursor medium (5) comprising silicon in the vicinity of the molten alloy (4); and a positioning means (16) for holding and moving a nucleation crystal (6) in the vicinity of the molten alloy (2).
摘要翻译：单晶片（11），特别是硅片（11）的制造方法包括：在其间形成间隙（3）的至少两个孔元件（1,2）提供在所述至少两个孔元件（1,2）之间的间隙（3）中包含硅的熔融合金（4）; 在所述熔融合金（4）附近提供包含硅的气态前体介质（5）; 在熔融合金（4）附近提供硅成核晶体（6）; 并与所述硅成核晶体（6）和熔融合金（4）接触。用于制造单晶片（11），特别是硅片（11）的装置（10,20）包括彼此间隔预定距离（D）的至少两个孔元件（1,2），从而形成间隙（3），并且适于被加热以保持在所述孔元件（1,2）之间的所述间隙（3）中通过表面张力保持包含硅的熔融合金（4）; 用于在熔融合金（4）附近供应包含硅的气态前体介质（5）的装置（15）; 以及用于保持和移动熔融合金（2）附近的成核晶体（6）的定位装置（16）。

2. 发明申请

WO2011024152A1 TUNNEL FIELD EFFECT DEVICES 审中-公开
标题翻译：隧道场效应装置
公开(公告)号：WO2011024152A1
公开(公告)日：2011-03-03
申请号：PCT/IB2010/053884
申请日：2010-08-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BJOERK, Mikael T. , KARG, Siegfried F. , KNOCH, Joachim , RIEL, Heike E. , RIESS, Walter H. , SOLOMON, Paul M.
发明人： BJOERK, Mikael T. , KARG, Siegfried F. , KNOCH, Joachim , RIEL, Heike E. , RIESS, Walter H. , SOLOMON, Paul M.
IPC分类号： H01L29/739 , H01L29/06
CPC分类号： H01L29/7391 , B82Y10/00 , H01L29/0665
摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.
摘要翻译：用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

3. 发明申请

WO2012066444A1 STRAINED NANOWIRE DEVICES 审中-公开
标题翻译：应变纳米器件
公开(公告)号：WO2012066444A1
公开(公告)日：2012-05-24
申请号：PCT/IB2011/054864
申请日：2011-11-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GOTSMANN, Bernd W. , KARG, Siegfried Friedrich , RIEL, Heike E.
发明人： GOTSMANN, Bernd W. , KARG, Siegfried Friedrich , RIEL, Heike E.
IPC分类号： H01L29/66 , H01L29/10 , H01L29/06 , H01L29/775 , B82Y40/00 , B82Y10/00
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y40/00 , H01L21/0262 , H01L21/02667 , H01L29/0669 , H01L29/0673 , H01L29/068 , H01L29/1054 , H01L29/42392 , H01L29/66439 , H01L29/66469 , H01L29/775 , H01L29/78687 , H01L29/78696
摘要： Nanowire devices (7, 14, 25, 38, 40) are provided together with methods for forming such devices. The methods comprise forming a stressor layer (6, 13, 23, 33) circumferentially surrounding a semiconductor nanowire (1, 10, 20, 30). The methods are performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.
摘要翻译：纳米线装置（7,14,25,38,40）与形成这种装置的方法一起提供。所述方法包括形成围绕半导体纳米线（1,10,20,30）的应力层（6,13,23,33）。执行这些方法使得由于应力层，纳米线经受径向和纵向应变中的至少一个以增强纳米线中的载流子迁移率。径向和纵向应变部件可以单独使用或一起使用，并且可以分别制成拉伸或压缩，从而允许制定所需的应变特性，以增强给定装置的纳米线中的导电性。

4. 发明申请

WO2005047177A1 DEVICE AND METHOD FOR PATTERNING STRUCTURES ON A SUBSTRATE 审中-公开
标题翻译：用于在基板上绘制结构的装置和方法
公开(公告)号：WO2005047177A1
公开(公告)日：2005-05-26
申请号：PCT/IB2004/003696
申请日：2004-11-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KARG, Siegfried F. , RIEL, Heike E. , RIESS, Walter , SCHLITTLER, Reto , GERMANN, Roland W.
发明人： KARG, Siegfried F. , RIEL, Heike E. , RIESS, Walter , SCHLITTLER, Reto , GERMANN, Roland W.
IPC分类号： B82B3/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate comprising an imaging device having a scanning tip a light emitting device, and a space around the scanning tip, which space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed, wherein the light emitting device is adapted to emit a light beam, which light beam has an intensity that is not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.
摘要翻译：一种用于在基板上图案化结构的装置，包括具有扫描尖端的成像装置和发光装置，以及围绕扫描尖端的空间，该空间包括当分解时适于化学气相沉积到基板上的材料的蒸汽，其中所述发光装置适于将所述光束具有不能分解蒸气的强度的光束以使得由所述扫描尖端附近的光束感应的电磁场为足够高以分解蒸气。

5. 发明申请

WO2015092608A1 THERMOELECTRIC DEVICE 审中-公开
标题翻译：热电装置
公开(公告)号：WO2015092608A1
公开(公告)日：2015-06-25
申请号：PCT/IB2014/066696
申请日：2014-12-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM RESEARCH GMBH
发明人： RIEL, Heike E. , SCHMIDT, Volker
IPC分类号： H01L35/32
CPC分类号： H01L35/32 , H01L35/10 , H01L35/34
摘要： A thermoelectric device (1) for transferring heat from a heat source (2) to a heat sink (3) comprises a first thermoelectric leg pair (10) having a first leg (4) including an n-type semiconductor material and a second leg (5) including a p-type semiconductor material, wherein the first leg (4) and the second leg (5) are electrically coupled in series. A second thermoelectric leg pair (11) has a third leg (7) including an n-type semiconductor material and a fourth leg (8) including a p-type semiconductor material, wherein the third leg (7) and the fourth leg (8) are electrically coupled in series. A first contact (12) placed between the first leg (4) and the fourth leg (8); and a second contact (13) placed between the second leg (5) and the third leg (7). A method for manufacturing a thermoelectric device or module comprises the steps of: providing a first thermoelectric leg pair (10) having a first leg (4) including an n-type semiconductor material and a second leg (5) including a p-type semiconductor material; electrically coupling the first leg (4) and the second leg (5) of the first thermoelectric leg pair (10) in series; providing a second thermoelectric leg pair (11) having a third leg (7) including an n-type semiconductor material and a fourth leg (8) including a p-type semiconductor material; electrically coupling the third leg (7) and the fourth leg (8) of the second thermoelectric leg pair (11) in series; placing a first contact (12) between the first leg (4) and the fourth leg (8); and placing a second contact (13) between the second leg (5) and the third leg (7).
摘要翻译：用于将热量从热源（2）传递到散热器（3）的热电装置（1）包括具有包括n型半导体材料和第二支腿的第一支腿（4）的第一热电腿对（10）（5），其包括p型半导体材料，其中所述第一腿部（4）和所述第二腿部（5）串联电耦合。第二热电腿对（11）具有包括n型半导体材料的第三腿部（7）和包括p型半导体材料的第四腿部（8），其中第三腿部（7）和第四腿部（8））串联电耦合。放置在第一腿部（4）和第四腿部（8）之间的第一接触件（12）以及放置在第二腿部（5）和第三腿部（7）之间的第二接触件（13）。一种用于制造热电装置或模块的方法包括以下步骤：提供具有包括n型半导体材料的第一支脚（4）和包括p型半导体的第二支脚（5）的第一热电腿对（10）材料; 电连接第一热电腿对（10）的第一腿部（4）和第二腿部（5）; 提供具有包括n型半导体材料的第三腿部（7）和包括p型半导体材料的第四腿部（8）的第二热电腿对（11）电连接第二热电腿对（11）的第三腿部（7）和第四腿部（8）; 在第一腿部（4）和第四腿部（8）之间放置第一接触件（12）; 以及将第二接触件（13）放置在第二腿部（5）和第三腿部（7）之间。

6. 发明申请

WO2015087230A1 SEMICONDUCTOR NANOWIRE FABRICATION 审中-公开
公开(公告)号：WO2015087230A1
公开(公告)日：2015-06-18
申请号：PCT/IB2014/066695
申请日：2014-12-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM RESEARCH GMBH
发明人： BORG, Mattias Bengt , MOSELUND, Kirsten Emilie , RIEL, Heike E. , SCHMID, Heinz
IPC分类号： H01L21/02 , H01L21/762
CPC分类号： H01L21/02603 , H01L21/02422 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L21/76262
摘要： Methods are provided for fabricating semiconductor nanowires 12, 40, 41, 45, 57 on a substrate 1, 20, 50. A nanowire template 3, 6; 22, 24; 31, 32 is formed on the substrate. The nanowire template defines an elongate tunnel 8, 26, 33 which extends, laterally over the substrate, between an opening 7, 25 in the template and a seed surface 10, 27, 34. The seed surface 10, 27, 34 is exposed to the tunnel and of area up to about 2x 4 10 nm 2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface 10, 27, 34 is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface.
摘要翻译：提供了用于在衬底1,20,50上制造半导体纳米线12,40,41,45,57的方法。 22,24; 31,32形成在基板上。纳米线模板限定了在模板中的开口7,25和种子表面10,37,34之间横向延伸的细长通道8,26,33。种子表面10,27,34暴露于隧道和面积高达大约2×4×10纳米2.半导体纳米线经由所述开口从晶种表面选择性地生长在模板中。种子表面10,27,34的面积优选使得纳米线的生长从种子表面上的单个成核点进行。

7. 发明申请

WO2014083461A1 OPTICAL SPECTROMETER 审中-公开
标题翻译：光学光谱仪
公开(公告)号：WO2014083461A1
公开(公告)日：2014-06-05
申请号：PCT/IB2013/060010
申请日：2013-11-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM JAPAN, LTD. , IBM RESEARCH GMBH
发明人： GOTSMANN, Bernd W. , KARG, Siegfried Friedrich , LOERTSCHER, Emanuel , RIEL, Heike E. , SIGNORELLO, Giorgio
IPC分类号： G01J3/32 , G01J3/02 , H01L31/10
CPC分类号： G01J3/0202 , B82Y20/00 , G01J1/0204 , G01J1/0429 , G01J1/0448 , G01J1/42 , G01J3/0224 , G01J3/0237 , G01J3/28 , G01J3/2803 , H01L31/035227 , H01L31/105
摘要： An optical spectrometer 1 comprises a photodiode 2 and a straining mechanism 4 for imposing adjustable strain on the photodiode. The spectrometer 1 includes measurement apparatus 7 for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism 4. Adjusting the strain allows adjustment of the band gap E g of the photosensitive region of the photodiode 1, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.
摘要翻译：光谱仪1包括用于在光电二极管上施加可调应变的光电二极管2和应变机构4。光谱仪1包括用于测量由应变机构4施加的可变应变的不同值的光电流变化的测量装置7.调节应变允许调节光电二极管1的感光区域的带隙E g，并且这确定吸收光子的截止能量。在应变机构施加的可调应变的不同值下测量光电流与应变的变化允许在对应于每个应变值的带隙能量的期望能量范围内研究光子。

8. 发明申请

WO2014068511A3 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2014068511A3
公开(公告)日：2014-05-08
申请号：PCT/IB2013/059814
申请日：2013-10-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM (CHINA) INVESTMENT COMPANY LTD. , IBM RESEARCH GMBH
发明人： CZORNOMAZ, Lukas , HOFRICHTER, Jens , RICHTER, Mirja , RIEL, Heike E.
IPC分类号： G02B6/12
摘要： The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4') of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.

9. 发明授权

EP1682445B1 Method for patterning structures on a substrate 有权
标题翻译：在基板上进行图案化结构的方法
公开(公告)号：EP1682445B1
公开(公告)日：2012-07-25
申请号：EP04798835.7
申请日：2004-11-09
申请人： International Business Machines Corporation
发明人： KARG, Siegfried F. , RIEL, Heike E. , RIESS, Walter , SCHLITTLER, Reto , GERMANN, Roland W.
IPC分类号： C23C16/04 , H01J37/317 , B82Y10/00 , B82Y30/00 , B82B3/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate comprising an imaging device having a scanning tip a light emitting device, and a space around the scanning tip, which space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed, wherein the light emitting device is adapted to emit a light beam, which light beam has an intensity that is not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.

10. 发明公开

EP1682445A1 DEVICE AND METHOD FOR PATTERNING STRUCTURES ON A SUBSTRATE 有权
标题翻译：在基板上进行图案化结构的方法
公开(公告)号：EP1682445A1
公开(公告)日：2006-07-26
申请号：EP04798835.7
申请日：2004-11-09
申请人： International Business Machines Corporation
发明人： KARG, Siegfried F. , RIEL, Heike E. , RIESS, Walter , SCHLITTLER, Reto , GERMANN, Roland W.
IPC分类号： B82B3/00 , C23C16/04 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate comprising an imaging device having a scanning tip a light emitting device, and a space around the scanning tip, which space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed, wherein the light emitting device is adapted to emit a light beam, which light beam has an intensity that is not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.

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