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1. 发明申请

WO2013089940A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A METAL NITRIDE CONTAINING SWITCHING LAYER 审中-公开
标题翻译：带有金属氮化物的非易失性电阻记忆元件包含切换层
公开(公告)号：WO2013089940A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/063513
申请日：2012-11-05
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： WANG, Yun , CHIANG, Tony P. , HASHIM, Imran , MINVIELLE, Tim , YAMAGUCHI, Takeshi
IPC分类号： H01L47/02 , H01L49/02 , H01L29/94
CPC分类号： H01L45/145 , B82Y10/00 , H01L27/2409 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer.
摘要翻译：非易失性电阻存储元件具有新颖的可变电阻层，其包括金属氮化物，金属氧化物氮化物，二金属氧化物氮化物或其多层叠层。形成新颖的可变电阻层的一种方法包括层间沉积程序，其中金属氧化物层散布有金属氮化物层，然后通过退火工艺转变成基本均匀的层。形成新型可变电阻层的另一种方法包括层间沉积程序，其中各种ALD工艺顺序交错以形成金属氧化物 - 氮化物层。或者，金属氧化物被沉积，氮化和退火以形成可变电阻层，或者金属氮化物被沉积，氧化和退火以形成可变电阻层。

2. 发明申请

WO2013130732A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH AN INTEGRATED OXYGEN ISOLATION STRUCTURE 审中-公开
标题翻译：具有一体化氧分离结构的非挥发性电阻记忆元件
公开(公告)号：WO2013130732A1
公开(公告)日：2013-09-06
申请号：PCT/US2013/028201
申请日：2013-02-28
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC , INTERMOLECULAR, INC.
发明人： CHIANG, Tony , HASHIM, Imran , WANG, Yun , PRAMANIK, Dipankar
IPC分类号： H01L29/02
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
摘要翻译：非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。一个这样的氧隔离结构包括氧阻挡层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

3. 发明申请

WO2014110331A1 THREE OR MORE RESISTIVE STATE RANDOM ACCESS MEMORY CELL 审中-公开
标题翻译：三个或更多电阻状态随机存取存储器单元
公开(公告)号：WO2014110331A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010986
申请日：2014-01-10
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： HASHIM, Imran , CLARKE, Ryan C. , LU, Nan , MINVIELLE, Tim , YAMAGUCHI, Takeshi
IPC分类号： G11C13/00
CPC分类号： H01L45/146 , G11C11/56 , G11C11/5685 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2213/32 , G11C2213/71 , G11C2213/77 , H01L45/08 , H01L45/1233 , H01L45/1253
摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。这样的ReRAM单元，或者更具体地说，它们的电阻式开关层具有宽范围的电阻状态，并且在一种状态下能够非常导电（例如，大约1kOhm），并且在另一种状态下具有很强的电阻（例如约1MOhm）。在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

4. 发明申请

WO2014031953A1 DEFECT ENHANCEMENT OF A SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT 审中-公开
标题翻译：非易失性存储元件中切换层的缺陷增强
公开(公告)号：WO2014031953A1
公开(公告)日：2014-02-27
申请号：PCT/US2013/056376
申请日：2013-08-23
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC , INTERMOLECULAR, INC.
发明人： LU, Nan , HASHIM, Imran , KUSE, Ronald , TONG, Jinhong , WANG, Ruey-Ven
IPC分类号： H01L21/44
CPC分类号： H01L45/1641 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention set forth a nonvolatile memory element with a novel variable resistance layer and methods of forming the same. The novel variable resistance layer includes a metal-rich host oxide that operates with a reduced switching voltage and current and requires significantly reduced forming voltage when manufactured. In some embodiments, the metal-rich host oxide is deposited using a modified atomic layer deposition (ALD) process. In other embodiments, the metal-rich host oxide is formed by depositing a metal-containing coupling layer on a host oxide and thermally processing both layers to create a metal-rich composite host oxide with a higher concentration of oxygen vacancies.
摘要翻译：本发明的实施例提出了具有新颖的可变电阻层的非易失性存储元件及其形成方法。新颖的可变电阻层包括富含金属的主体氧化物，其以降低的开关电压和电流工作，并且当制造时需要显着降低的成形电压。在一些实施方案中，使用修改的原子层沉积（ALD）工艺沉积富金属的主体氧化物。在其它实施方案中，富含金属的主体氧化物通过在主体氧化物上沉积含金属的偶联层并热加工两层以产生具有较高浓度氧空位的富金属复合主体氧化物而形成。

5. 发明申请

WO2013109954A2 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT 审中-公开
标题翻译：使用隧道式氧化物作为被动电流转向元件的非易失性存储器件
公开(公告)号：WO2013109954A2
公开(公告)日：2013-07-25
申请号：PCT/US2013/022242
申请日：2013-01-18
申请人： KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： TENDULKAR, Mihir , HASHIM, Imran , WANG, Yun
IPC分类号： H01L45/00 , H01L21/02 , B82Y99/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

6. 发明申请

WO2014043630A1 EMBEDDED NONVOLATILE MEMORY ELEMENTS HAVING RESISTIVE SWITCHING CHARACTERISTICS 审中-公开
标题翻译：嵌入式非易失性存储器元件具有电阻开关特性
公开(公告)号：WO2014043630A1
公开(公告)日：2014-03-20
申请号：PCT/US2013/059963
申请日：2013-09-16
申请人： INTERMOLECULAR, INC
发明人： HASHIM, Imran , CHIANG, Tony , GOPAL, Vidyut , WANG, Yun
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/74 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.
摘要翻译：提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。转向元件可以是与开关层串联连接的晶体管。由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。

7. 发明申请

WO2013032809A1 ATOMIC LAYER DEPOSITION OF METAL OXIDE MATERIALS FOR MEMORY APPLICATIONS 审中-公开
标题翻译：用于存储器应用的金属氧化物材料的原子层沉积
公开(公告)号：WO2013032809A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/051865
申请日：2012-08-22
申请人： INTERMOLECULAR, INC. , WANG, Yun , GOPAL, Vidyut , HASHIM, Imran , PRAMANIK, Dipankar , CHIANG, Tony
发明人： WANG, Yun , GOPAL, Vidyut , HASHIM, Imran , PRAMANIK, Dipankar , CHIANG, Tony
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.
摘要翻译：本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。设置在金属氧化物层之间的界面有助于氧空位移动。在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对准的晶界，其包含平行于电极界面延伸的许多晶界。因此，氧空缺在切换期间被捕获和释放，而空位明显损失。因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

8. 发明申请

WO2013119882A1 TRANSITION METAL OXIDE BILAYERS 审中-公开
标题翻译：过渡金属氧化物双层
公开(公告)号：WO2013119882A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/025238
申请日：2013-02-07
申请人： INTERMOLECULAR, INC.
发明人： PHAM, Hieu , GOPAL, Vidyut , HASHIM, Imran , WANG, Yun , YANG, Hong Sheng
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 and about 100, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译：本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。还公开了形成非易失性存储元件的方法。非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。优选地，两个氧化物层厚度的总和在约20和约100之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

9. 发明申请

WO2013109842A1 NONVOLATILE MEMORY DEVICE HAVING A CURRENT LIMITING ELEMENT 审中-公开
标题翻译：具有电流限制元件的非易失性存储器件
公开(公告)号：WO2013109842A1
公开(公告)日：2013-07-25
申请号：PCT/US2013/022083
申请日：2013-01-18
申请人： INTERMOLECULAR, INC
发明人： WANG, Yun , HASHIM, Imran , CHIANG, Tony
IPC分类号： G11C11/00
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1616
摘要： A method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The current limiting component comprises at least one layer of resistive material configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming ("set" and "reset") steps by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：一种形成非易失性存储器件的方法，该非易失性存储器件包含由于设置在其中的限流部件的添加而具有改善的器件切换性能和寿命的电阻式开关存储元件。电流限制部件包括至少一层电阻材料，其被配置为改善所形成的电阻式开关存储元件的开关性能和寿命。形成的限流层或电阻层的电性能被配置为在逻辑状态编程（“设置”和“复位”）步骤期间通过在所形成的电流层中添加固定的串联电阻来降低通过可变电阻层的电流在非易失性存储器件中存在的电阻式开关存储元件。电阻式开关存储元件可以形成为用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）中的大容量非易失性存储器集成电路的一部分。

10. 发明申请

WO2013032855A2 METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS 审中-公开
标题翻译：形成电阻开关记忆元件的方法
公开(公告)号：WO2013032855A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/052054
申请日：2012-08-23
申请人： INTERMOLECULAR, INC. , TONG, Jinhong , HIGUCHI, Randall , HASHIM, Imran , GOPAL, Vidyut
发明人： TONG, Jinhong , HIGUCHI, Randall , HASHIM, Imran , GOPAL, Vidyut
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/1608 , H01L45/04 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1658
摘要： Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
摘要翻译：制造具有降低的成形电压的RRAM电阻式开关元件的方法包括掺杂以在电介质膜中产生氧缺陷。电介质膜中的氧缺乏促进导电通路的形成。

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