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1. 发明申请

WO2010147931A1 SUB-CRITICAL SHEAR THINNING GROUP IV BASED NANOPARTICLE FLUID 审中-公开
标题翻译：第Ⅳ组基于亚硫酸盐的亚临界剪切流体
公开(公告)号：WO2010147931A1
公开(公告)日：2010-12-23
申请号：PCT/US2010/038596
申请日：2010-06-15
申请人： INNOVALIGHT, INC. , KIM, Hyungrak , ABBOTT, Malcolm , MEISEL, Andreas , TAI, Elizabeth , JONES, Augustus , POPLAVSKYY, Dmitry , VANHEUSDEN, Karel
发明人： KIM, Hyungrak , ABBOTT, Malcolm , MEISEL, Andreas , TAI, Elizabeth , JONES, Augustus , POPLAVSKYY, Dmitry , VANHEUSDEN, Karel
IPC分类号： H01B1/02 , H01L21/208
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02601 , H01L21/02628 , H01L21/02658
摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt% and about 20 wt% of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt% and about 5 wt% of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.
摘要翻译：公开了基于IV族的纳米颗粒流体。纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

2. 发明申请

WO2009032359A3 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
公开(公告)号：WO2009032359A3
公开(公告)日：2009-03-12
申请号：PCT/US2008/057702
申请日：2008-03-20
申请人： INNOVALIGHT, INC. , ABBOTT, Malcolm , KELMAN, Maxim , LEMMI, Francesco , MEISEL, Andreas , POPLAVSKYY, Dmitry , TERRY, Mason , VANHEUSDEN, Karel
发明人： ABBOTT, Malcolm , KELMAN, Maxim , LEMMI, Francesco , MEISEL, Andreas , POPLAVSKYY, Dmitry , TERRY, Mason , VANHEUSDEN, Karel
IPC分类号： H01L31/04 , H01L31/0352
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

3. 发明申请

WO2009117007A3 METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE 审中-公开
公开(公告)号：WO2009117007A3
公开(公告)日：2009-09-24
申请号：PCT/US2008/059113
申请日：2008-04-02
申请人： INNOVALIGHT, INC. , VANHEUSDEN, Karel , LEMMI, Francesco , POPLAVSKYY, Dmitry , TERRY, Mason , ABBOTT, Malcolm
发明人： VANHEUSDEN, Karel , LEMMI, Francesco , POPLAVSKYY, Dmitry , TERRY, Mason , ABBOTT, Malcolm
IPC分类号： H01L31/0224 , H01B1/16 , H05K1/09 , C03C8/18
摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.

4. 发明申请

WO2008124400A1 METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES 审中-公开
标题翻译：用反应性气体优化薄膜形成的方法
公开(公告)号：WO2008124400A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059038
申请日：2008-04-01
申请人： INNOVALIGHT, INC. , TERRY, Mason , ABBOTT, Malcolm , KELMAN, Maxim , MEISEL, Andreas , POPLAVSKYY, Dmitry , SCHIFF, Eric
发明人： TERRY, Mason , ABBOTT, Malcolm , KELMAN, Maxim , MEISEL, Andreas , POPLAVSKYY, Dmitry , SCHIFF, Eric
IPC分类号： H01L21/208
CPC分类号： H01L21/02667 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628
摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300°C and about 1350°C, and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.
摘要翻译：公开了一种用于在腔室中制造IV族半导体薄膜的方法。该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒形成了。该方法还包括冲击氢等离子体; 以及将第IV族半导体纳米颗粒层加热至约300℃至约1350℃之间的制造温度和约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

5. 发明申请

WO2011091289A1 METHODS OF FORMING A DUAL-DOPED EMITTER ON A SUBSTRATE WITH AN INLINE DIFFUSION APPARATUS 审中-公开
标题翻译：在具有在线扩散装置的基板上形成双掺杂发射体的方法
公开(公告)号：WO2011091289A1
公开(公告)日：2011-07-28
申请号：PCT/US2011/022107
申请日：2011-01-21
申请人： INNOVALIGHT, INC. , SCARDERA, Giuseppe , ABBOTT, Malcolm , POPLAVSKYY, Dmitry , SHAH, Sunil
发明人： SCARDERA, Giuseppe , ABBOTT, Malcolm , POPLAVSKYY, Dmitry , SHAH, Sunil
IPC分类号： B05D1/32 , C23C8/24
CPC分类号： H01L21/228 , H01L31/03845
摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a substrate doped with boron atoms, the substrate comprising a front substrate surface. The method also includes depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents; and heating the substrate in a baking ambient at a baking temperature and for a baking time period wherein a densified ink layer is formed. The method further includes exposing the substrate to a phosphorous dopant source at a drive-in temperature and for a drive-in time period.
摘要翻译：公开了形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括在油墨图案的前基材表面上沉积油墨，该油墨包含一组纳米颗粒和一组溶剂; 以及在焙烤温度下烘烤环境中加热基材，并在烘烤时间段内形成致密油墨层。该方法还包括在驱动温度和驱动时间段内将衬底暴露于磷掺杂剂源。

6. 发明申请

WO2011109242A1 METHODS OF FORMING A LOW RESISTANCE SILICON METAL CONTACT 审中-公开
标题翻译：形成低电阻硅金属接触的方法
公开(公告)号：WO2011109242A1
公开(公告)日：2011-09-09
申请号：PCT/US2011/026253
申请日：2011-02-25
申请人： INNOVALIGHT, INC. , POPLAVSKYY, Dmitry , ABBOTT, Malcolm
发明人： POPLAVSKYY, Dmitry , ABBOTT, Malcolm
IPC分类号： H01L21/22
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. Then, heating the substrate to a baking temperature for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient comprising POCI 3 , a carrier N 2 gas, a main N 2 gas, and a reactive 0 2 gas at a temperature for a time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate to a drive-in temperature and for a time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a time period.
摘要翻译：描述了在衬底上形成欧姆接触的方法。该方法包括在衬底表面上沉积一组硅颗粒。然后，将基板加热到烧成温度以进行焙烧时间，以便产生致密的薄膜油墨图案。该方法还包括在一段时间内将衬底暴露于扩散炉中的掺杂剂源，其中沉积环境包括POCI 3，载体N 2气体，主N 2气体和反应性O 2气体，其中PSG层为形成在基板表面上。该方法还包括将衬底加热到驱动温度和一段时间; 并沉积氮化硅层。该方法还包括在该硅颗粒组上沉积一组金属触点; 并将基板加热至焙烧温度并持续一段时间。

7. 发明申请

WO2012012166A1 METHODS OF FORMING A METAL CONTACT ON A SILICON SUBSTRATE 审中-公开
标题翻译：在硅基底上形成金属接触的方法
公开(公告)号：WO2012012166A1
公开(公告)日：2012-01-26
申请号：PCT/US2011/042328
申请日：2011-06-29
申请人： INNOVALIGHT, INC , ABBOTT, Malcolm , KRAY, Daniel
发明人： ABBOTT, Malcolm , KRAY, Daniel
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The abstract was not in accordance with PCT Rule 8.1(b) because it was more than 150 words in length. The abstract has been established by this Authority to read as follows: Forming a metal contact on a silicon substrate includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising a set of nanoparticles and a set of solvents. The method also includes heating the substrate to a first temperature for a first time period to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, the SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.
摘要翻译：摘要与PCT规则第8.1（b）条不符，因为它的长度超过150个字。摘要已经由本局建立，以阅读如下：在硅衬底上形成金属接触包括以图案沉积在衬底表面上的纳米颗粒油墨，纳米颗粒油墨包含一组纳米颗粒和一组溶剂。该方法还包括将基底加热到第一温度第一时间以产生具有大于约50nm的纳米颗粒层厚度的致密的纳米颗粒层。该方法还包括在衬底表面上沉积SiNx层，SiNx层的SiNx层厚度在约50nm至约110nm之间; 将所述衬底暴露于对所述致密纳米颗粒层选择性的蚀刻剂，所述蚀刻剂在第二时间段内和在第二温度下产生通孔; 以及在所述通孔中形成金属接触，其中与所述硅衬底形成欧姆接触。

8. 发明申请

WO2012012167A1 METHODS OF FORMING A FLOATING JUNCTION ON A SOLAR CELL WITH A PARTICLE MASKING LAYER 审中-公开
标题翻译：在具有颗粒掩蔽层的太阳能电池上形成浮动接头的方法
公开(公告)号：WO2012012167A1
公开(公告)日：2012-01-26
申请号：PCT/US2011/042330
申请日：2011-06-29
申请人： INNOVALIGHT, INC , ABBOTT, Malcolm , KELMAN, Maxim , ROSENFELD, Eric , ROGOJINA, Elena , SCARDERA, Giuseppe
发明人： ABBOTT, Malcolm , KELMAN, Maxim , ROSENFELD, Eric , ROGOJINA, Elena , SCARDERA, Giuseppe
IPC分类号： H01L21/00
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a floating junction on a substrate includes depositing a set of masking particles on the rear surface of a substrate in a set of patterns and heating the substrate to create a particle masking layer. The substrate is exposed to a phosphorous deposition wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The substrate is further exposed to a set of etchants wherein the front surface PSG layer and the rear surface PSG layer are removed; depositing front and rear surface SiNx layers; and forming a rear metal contact on the rear surface through the rear surface SiNx layer.
摘要翻译：在衬底上形成浮点的方法包括在一组图案中在衬底的后表面上沉积一组掩模颗粒，并加热该衬底以产生一个微粒掩蔽层。将基板暴露于磷沉积物中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层，并且其中基板中的第一磷掺杂剂表面浓度接近于图案的集合小于衬底中不接近于图案集合的第二掺杂剂表面浓度。将衬底进一步暴露于一组蚀刻剂，其中去除前表面PSG层和后表面PSG层; 沉积前后表面SiNx层; 并通过后表面SiNx层在后表面上形成后金属接触。

9. 发明申请

WO2010050936A1 METHODS OF FORMING MULTI-DOPED JUNCTIONS ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成多层结的方法
公开(公告)号：WO2010050936A1
公开(公告)日：2010-05-06
申请号：PCT/US2008/081558
申请日：2008-10-29
申请人： INNOVALIGHT, INC. , SHAH, Sunil , ABBOTT, Malcolm
发明人： SHAH, Sunil , ABBOTT, Malcolm
IPC分类号： H01L21/265 , H01L31/04
CPC分类号： H01L31/1804 , H01L21/2254 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first surface region and a second surface region. The method also includes depositing a first set of nanoparticles on the first surface region, the first set of nanoparticles including a first dopant. The method further includes heating the substrate in an inert ambient to a first temperature and for a first time period creating a first densified film, and further creating a first diffused region with a first diffusion depth in the substrate beneath the first surface region. The method also includes exposing the substrate to a diffusion gas including phosphorous at a second temperature and for a second time period creating a PSG layer on the first substrate surface and further creating a second diffused region with a second diffusion depth in the substrate beneath the second surface region, wherein the first diffused region is proximate to the second diffused region. The method further includes exposing the substrate to a oxidizing gas at a third temperature and for a third time period, wherein a SiO2 layer is formed between the PSG layer and the substrate surface, wherein the first diffusion depth is substantially greater than the second diffusion depth.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼的衬底，该衬底包括具有第一表面区域和第二表面区域的第一衬底表面。该方法还包括在第一表面区域沉积第一组纳米颗粒，第一组纳米颗粒包括第一掺杂剂。该方法还包括将惰性环境中的衬底加热至第一温度并在第一时间段内产生第一致密化膜，并且还在第一表面区域下方的基底中产生具有第一扩散深度的第一扩散深度。该方法还包括将衬底暴露于包括在第二温度下的磷的扩散气体，并且持续第二时间段在第一衬底表面上产生PSG层，并进一步产生第二扩散区域，第二扩散区域在第二扩散区域的第二扩散深度表面区域，其中第一扩散区域靠近第二扩散区域。该方法还包括在第三温度和第三时间段内将衬底暴露于氧化气体，其中在PSG层和衬底表面之间形成SiO 2层，其中第一扩散深度基本上大于第二扩散深度。

10. 发明授权

EP2191513B1 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 有权
标题翻译： IV族纳米颗粒跃迁及其器件
公开(公告)号：EP2191513B1
公开(公告)日：2015-12-23
申请号：EP08769026.9
申请日：2008-03-20
申请人： Innovalight, Inc.
发明人： ABBOTT, Malcolm , KELMAN, Maxim , LEMMI, Francesco , MEISEL, Andreas , POPLAVSKYY, Dmitry , TERRY, Mason , VANHEUSDEN, Karel
IPC分类号： H01L31/068 , H01L31/18
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521

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