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1. 发明申请

WO2011091289A1 METHODS OF FORMING A DUAL-DOPED EMITTER ON A SUBSTRATE WITH AN INLINE DIFFUSION APPARATUS 审中-公开
标题翻译：在具有在线扩散装置的基板上形成双掺杂发射体的方法
公开(公告)号：WO2011091289A1
公开(公告)日：2011-07-28
申请号：PCT/US2011/022107
申请日：2011-01-21
申请人： INNOVALIGHT, INC. , SCARDERA, Giuseppe , ABBOTT, Malcolm , POPLAVSKYY, Dmitry , SHAH, Sunil
发明人： SCARDERA, Giuseppe , ABBOTT, Malcolm , POPLAVSKYY, Dmitry , SHAH, Sunil
IPC分类号： B05D1/32 , C23C8/24
CPC分类号： H01L21/228 , H01L31/03845
摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a substrate doped with boron atoms, the substrate comprising a front substrate surface. The method also includes depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents; and heating the substrate in a baking ambient at a baking temperature and for a baking time period wherein a densified ink layer is formed. The method further includes exposing the substrate to a phosphorous dopant source at a drive-in temperature and for a drive-in time period.
摘要翻译：公开了形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括在油墨图案的前基材表面上沉积油墨，该油墨包含一组纳米颗粒和一组溶剂; 以及在焙烤温度下烘烤环境中加热基材，并在烘烤时间段内形成致密油墨层。该方法还包括在驱动温度和驱动时间段内将衬底暴露于磷掺杂剂源。

2. 发明申请

WO2011002898A1 METHODS OF USING A SILICON NANOPARTICLE FLUID TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES 审中-公开
标题翻译：使用硅纳米颗粒流体控制在一组眩光扩散型材中的方法
公开(公告)号：WO2011002898A1
公开(公告)日：2011-01-06
申请号：PCT/US2010/040623
申请日：2010-06-30
申请人： INNOVALIGHT, INC. , SCARDERA, Giuseppe , POPLAVSKYY, Dmitry , BURROWS, Michael , SHAH, Sunil
发明人： SCARDERA, Giuseppe , POPLAVSKYY, Dmitry , BURROWS, Michael , SHAH, Sunil
IPC分类号： H01L21/00
CPC分类号： H01L21/2255 , H01L31/068 , Y02E10/547
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method provides doping the front of the substrate with boron atoms, and depositing an ink in a pattern, the ink comprising a set of nanoparticles and a set of solvents, and heating the substrate in a baking ambient to a first temperature of between about 200°C and about 800°C and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern, exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCh, a earner N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of N2 gas to O2 gas is between about 1:1 to about 1.5:1, at a second temperature and for a second time period.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法提供用硼原子掺杂衬底的前部，并以图案沉积油墨，该油墨包括一组纳米颗粒和一组溶剂，并将烘烤环境中的基材加热至约200 在约3分钟至约20分钟之间的第一时间段内，为了产生致密的薄膜油墨图案，将沉积环境的基板暴露于扩散炉中的掺杂剂源包括POCh，载气N2气体，主N 2气体和反应性O 2气体的环境，其中N 2气体与O 2气体的比例在约1:1至约1.5:1之间，在第二温度和第二时间期。

3. 发明申请

WO2010050936A1 METHODS OF FORMING MULTI-DOPED JUNCTIONS ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成多层结的方法
公开(公告)号：WO2010050936A1
公开(公告)日：2010-05-06
申请号：PCT/US2008/081558
申请日：2008-10-29
申请人： INNOVALIGHT, INC. , SHAH, Sunil , ABBOTT, Malcolm
发明人： SHAH, Sunil , ABBOTT, Malcolm
IPC分类号： H01L21/265 , H01L31/04
CPC分类号： H01L31/1804 , H01L21/2254 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first surface region and a second surface region. The method also includes depositing a first set of nanoparticles on the first surface region, the first set of nanoparticles including a first dopant. The method further includes heating the substrate in an inert ambient to a first temperature and for a first time period creating a first densified film, and further creating a first diffused region with a first diffusion depth in the substrate beneath the first surface region. The method also includes exposing the substrate to a diffusion gas including phosphorous at a second temperature and for a second time period creating a PSG layer on the first substrate surface and further creating a second diffused region with a second diffusion depth in the substrate beneath the second surface region, wherein the first diffused region is proximate to the second diffused region. The method further includes exposing the substrate to a oxidizing gas at a third temperature and for a third time period, wherein a SiO2 layer is formed between the PSG layer and the substrate surface, wherein the first diffusion depth is substantially greater than the second diffusion depth.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼的衬底，该衬底包括具有第一表面区域和第二表面区域的第一衬底表面。该方法还包括在第一表面区域沉积第一组纳米颗粒，第一组纳米颗粒包括第一掺杂剂。该方法还包括将惰性环境中的衬底加热至第一温度并在第一时间段内产生第一致密化膜，并且还在第一表面区域下方的基底中产生具有第一扩散深度的第一扩散深度。该方法还包括将衬底暴露于包括在第二温度下的磷的扩散气体，并且持续第二时间段在第一衬底表面上产生PSG层，并进一步产生第二扩散区域，第二扩散区域在第二扩散区域的第二扩散深度表面区域，其中第一扩散区域靠近第二扩散区域。该方法还包括在第三温度和第三时间段内将衬底暴露于氧化气体，其中在PSG层和衬底表面之间形成SiO 2层，其中第一扩散深度基本上大于第二扩散深度。

4. 发明申请

WO2007147038A2 LIGHTWEIGHT PREFORM AND METHOD OF MANUFACTURE 审中-公开
标题翻译：轻型预制和制造方法
公开(公告)号：WO2007147038A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/071187
申请日：2007-06-14
申请人： GRAHAM PACKAGING COMPANY, L.P. , UPGRADY, Eric , SHAH, Sunil , WURSTER, Michael
发明人： UPGRADY, Eric , SHAH, Sunil , WURSTER, Michael
IPC分类号： B29C49/00 , B29C49/02 , B32B27/08
CPC分类号： B29B11/14 , B29B11/08 , B29B2911/1402 , B29B2911/14026 , B29B2911/14033 , B29B2911/1404 , B29B2911/14106 , B29B2911/14133 , B29B2911/14326 , B29B2911/14333 , B29B2911/1434 , B29B2911/1444 , B29B2911/14466 , B29B2911/14606 , B29B2911/14666 , B29B2911/14726 , B29B2911/1498 , B29C49/06 , Y10T428/1352 , Y10T428/1397
摘要： A preform for use in blow molding a plastic container is disclosed herein. The preform has an open end and closed end, and a body adapted to form a body of the container when the container is blow molded. The preform further includes a finish having a top surface, an inner wall having circumferentially-spaced thin segments alternating with thick segments, and an outer wall wherein the thin segments exist entirely in the finish and extend towards the open end of the body of the preform. The thick segments do not extend to the top surface.
摘要翻译：本文公开了一种用于吹塑塑料容器的预成型件。预成型件具有开口端和封闭端，以及当容器被吹塑时适于形成容器本体的主体。预成型坯还包括具有顶表面的内饰件，具有与厚部分交替的具有周向间隔的薄部分的内壁以及外壁，其中薄部分完全存在于精加工中并且朝向预成型件本体的开口端延伸。厚段不延伸到顶部表面。

5. 发明申请

WO2003105339A1 MULTILINE TRANSMISSION IN COMMUNICATION SYSTEMS 审中-公开
标题翻译：通信系统中的多路传输
公开(公告)号：WO2003105339A1
公开(公告)日：2003-12-18
申请号：PCT/US2003/018004
申请日：2003-06-06
申请人： TOKYO ELECTRON LIMITED , TSATSANIS, Michail , ERICKSON, Mark, A. , SHAH, Sunil
发明人： TSATSANIS, Michail , ERICKSON, Mark, A. , SHAH, Sunil
IPC分类号： H03H7/30
CPC分类号： H04L1/06 , H04B3/32 , H04L5/023 , H04L25/0248 , H04L25/03343 , H04L27/0002 , H04L27/2626 , H04L27/2647 , H04L2025/03414 , H04L2025/03426 , H04L2025/03445 , H04L2025/03522 , H04L2025/03605
摘要： A method and system for multiline transmission in communications systems are described. A transmitter (1102) performs MIMO pre-processing (1104) on symbol vectors. A signal vector associated with the symbol vector is transmitted. A receiver (1106) performs MIMO post-processing (1108) on the received signal vectors to minimize the effects of crosstalk on pairs of lines in the multiline communications system.
摘要翻译：描述了通信系统中的多线传输的方法和系统。发射机（1102）对符号向量执行MIMO预处理（1104）。发送与符号向量相关联的信号向量。接收器（1106）对所接收的信号向量执行MIMO后处理（1108），以使串扰对多线通信系统中的线对的影响最小化。

6. 发明公开

EP2345062A1 METHODS OF FORMING MULTI-DOPED JUNCTIONS ON A SUBSTRATE 审中-公开
标题翻译：用于形成多掺杂阻挡层在基底上
公开(公告)号：EP2345062A1
公开(公告)日：2011-07-20
申请号：EP08877854.3
申请日：2008-10-29
申请人： Innovalight, Inc.
发明人： SHAH, Sunil , ABBOTT, Malcolm
IPC分类号： H01L21/265 , H01L31/04
CPC分类号： H01L31/1804 , H01L21/2254 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first surface region and a second surface region. The method also includes depositing a first set of nanoparticles on the first surface region, the first set of nanoparticles including a first dopant. The method further includes heating the substrate in an inert ambient to a first temperature and for a first time period creating a first densified film, and further creating a first diffused region with a first diffusion depth in the substrate beneath the first surface region. The method also includes exposing the substrate to a diffusion gas including phosphorous at a second temperature and for a second time period creating a PSG layer on the first substrate surface and further creating a second diffused region with a second diffusion depth in the substrate beneath the second surface region, wherein the first diffused region is proximate to the second diffused region. The method further includes exposing the substrate to a oxidizing gas at a third temperature and for a third time period, wherein a SiO2 layer is formed between the PSG layer and the substrate surface, wherein the first diffusion depth is substantially greater than the second diffusion depth.

7. 发明公开

EP2449577A1 METHODS OF USING A SILICON NANOPARTICLE FLUID TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES 审中-公开
标题翻译：方法采用硅纳米颗粒流体原位控制掺杂物扩散分布的一组的
公开(公告)号：EP2449577A1
公开(公告)日：2012-05-09
申请号：EP10794713.7
申请日：2010-06-30
申请人： Innovalight, Inc.
发明人： SCARDERA, Giuseppe , POPLAVSKYY, Dmitry , BURROWS, Michael , SHAH, Sunil
IPC分类号： H01L21/00
CPC分类号： H01L21/2255 , H01L31/068 , Y02E10/547
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method provides doping the front of the substrate with boron atoms, and depositing an ink in a pattern, the ink comprising a set of nanoparticles and a set of solvents, and heating the substrate in a baking ambient to a first temperature of between about 200°C and about 800°C and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern, exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCh, a earner N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of N2 gas to O2 gas is between about 1:1 to about 1.5:1, at a second temperature and for a second time period.

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