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1. 发明申请

WO2008114894A1 LIGHT EMITTING DIODE WITH MICROLENS 审中-公开
标题翻译：微光发光二极管
公开(公告)号：WO2008114894A1
公开(公告)日：2008-09-25
申请号：PCT/KR2007/001367
申请日：2007-03-20
申请人： INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY , PARK, Si-Hyun , SON, Su-Gwang , LEE, June-Kee , KIM, Jin-Hyeok , MOON, Jong-Ha
发明人： PARK, Si-Hyun , SON, Su-Gwang , LEE, June-Kee , KIM, Jin-Hyeok , MOON, Jong-Ha
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L2933/0083
摘要： The present invention provides a light emitting diode equipped with a microlens having an N type semiconductor layer, an active layer, and a P type semiconductor layer in the right order on the upper side of the substrate. From the P type semiconductor layer to the some part of the N type semiconductor layer are eliminated, so other part of the N type semiconductor layer is exposed. On the upper side of the exposed N type semiconductor layer, an N type electrode pad is formed; on the upper side of the P type semiconductor layer, a transparent conducting layer (TCL) is formed; on the upper side of the P type semiconductor layer, a P type electrode pad is formed; on the upper side of the TCL, microlenses made of UV-curable adhesives are arrayed. The LED equipped with the microlens of the present invention can enhance the external extraction efficiency without the degradation of resistance: LEDs with 10 μ m diameter-sized microlenses perform 1.24 times better than those with no integration of microlenses and LEDs with 20 μ m microlenses perform 1.17 times better.
摘要翻译：本发明提供一种发光二极管，其配置有在该基板的上侧上具有N型半导体层，有源层和P型半导体层的微透镜。从P型半导体层到N型半导体层的一部分被去除，因此N型半导体层的其他部分被露出。在暴露的N型半导体层的上侧，形成N型电极焊盘; 在P型半导体层的上侧形成透明导电层（TCL）在P型半导体层的上侧形成有P型电极焊盘; 在TCL的上侧，排列由UV固化粘合剂制成的微透镜。配备有本发明的微透镜的LED可以提高外部提取效率，而不会降低电阻：具有10μm直径尺寸的微透镜的LED比没有微透镜的集成和具有20μm微透镜的LED执行1.17倍的性能是1.24倍更好。

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