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1. 发明申请

WO2008053008A3 METHOD FOR MANUFACTURING A MICROMACHINED DEVICE 审中-公开
标题翻译：制造微型设备的方法
公开(公告)号：WO2008053008A3
公开(公告)日：2008-06-19
申请号：PCT/EP2007061731
申请日：2007-10-31
申请人： IMEC INTER UNI MICRO ELECTR , ASML NETHERLANDS BV , WITVROUW ANN , HASPESLAGH LUC
发明人： WITVROUW ANN , HASPESLAGH LUC
IPC分类号： B81C1/00
CPC分类号： H01L21/324 , B81C1/00246 , B81C2203/0735 , Y10T428/24612
摘要： The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.
摘要翻译：本发明提供了一种用于在包括电路的衬底（10）上制造微加工器件的方法，所述微加工器件包括至少一个微加工结构，而不影响下面的电路。该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上设置多个用于形成所述至少一个微机械加工结构的图案化层，所述多个图案化层包括至少一个牺牲层（18）; 然后去除所述牺牲层（18）的至少一部分以释放所述至少一个微加工结构。该方法还包括在提供保护层（15）之前，在高于在微加工装置的制造期间使用的最高温度的温度下对衬底（10）退火，用于在保护层（15）的下方防止形成气体的退火后续制造步骤。本发明还提供了通过根据本发明的实施例的方法获得的微加工装置。

2. 发明申请

WO2009019316A3 METHOD FOR FORMING MEMS STRUCTURES COMPRISING NARROW GAPS 审中-公开
标题翻译：形成微结构的微结构的方法
公开(公告)号：WO2009019316A3
公开(公告)日：2009-05-22
申请号：PCT/EP2008060486
申请日：2008-08-08
申请人： IMEC INTER UNI MICRO ELECTR , UNIV LEUVEN KATH , STOFFELS STEVE , WITVROUW ANN
发明人： STOFFELS STEVE , WITVROUW ANN
IPC分类号： B81C1/00 , H03H3/007
CPC分类号： B81C1/00063 , B81B2201/0271 , B81C2203/0145 , H03H3/0078 , H03H9/1057
摘要： A method for forming narrow gaps, for ex ample gaps narrower than 400nm, e.g. less than 200nm or 100 nm, between elements of a MEMS structure is described, as well as a method for forming micromachined or MEMS structures comprising narrow gaps. The method may for example be used for forming high frequency micromechanical resonators comprising narrow transduction gaps.
摘要翻译：用于形成狭窄间隙的方法，用于例如窄于400nm的间隙，例如描述了MEMS结构的元件之间的小于200nm或100nm，以及用于形成包括窄间隙的微加工或MEMS结构的方法。该方法可以例如用于形成包括窄换能间隙的高频微机械谐振器。

3. 发明申请

WO0174708A3 METHOD FOR DEPOSITING POLYCRYSTALLINE SIGE SUITABLE FOR MICROMACHINING AND DEVICES OBTAINED THEREOF 审中-公开
标题翻译：用于沉积适用于微机电的多晶硅信号的方法及其获得的器件
公开(公告)号：WO0174708A3
公开(公告)日：2002-03-21
申请号：PCT/IB0100765
申请日：2001-04-05
申请人： IMEC INTER UNI MICRO ELECTR , SEDKY SHERIF , WITVROUW ANN , BAERT KRIS , CAYMAX MATTY , RUSU CRISTINA
发明人： SEDKY SHERIF , WITVROUW ANN , BAERT KRIS , CAYMAX MATTY , RUSU CRISTINA
IPC分类号： B81C1/00 , C23C16/22 , H01L21/205 , H01L31/0368 , H01L31/18 , B81B3/00
CPC分类号： C23C16/22 , B81C1/00365 , B81C2201/0164 , B81C2201/017 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/03682 , H01L31/1812 , Y02E10/546
摘要： Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.
摘要翻译：获得沉积的多晶和低应力SiGe层的方法和设备。这些层用于微机电系统（MEMS）装置或微加工结构。分析影响多晶层中的应力的不同参数。参数包括但不限于：沉积温度; 半导体的浓度（例如，SixGe1-x层中的硅和锗的浓度，x是浓度参数）; 掺杂剂的浓度（例如硼或磷的浓度）; 压力量; 并使用等离子体。取决于多晶SiGe生长的特定环境，使用不同的参数值。

4. 发明专利

JP2002192498A MANUFACTURING METHOD OF MICROMACHINED DEVICE 审中-公开
公开(公告)号：JP2002192498A
公开(公告)日：2002-07-10
申请号：JP2001311468
申请日：2001-10-09
申请人： IMEC INTER UNI MICRO ELECTR , EASTMAN KODAK CO
发明人： WITVROUW ANN , DE VRIES ATZE , ANAGNOSTOPOULOS CONSTANTINE , DE MOOR PIET , HASPELAGH LUC , PARMENTIER BRIGITTE , VERBIST AGNES
IPC分类号： G03F7/20 , B81C1/00 , H01L29/04
摘要： PROBLEM TO BE SOLVED: To provide a micro-machined device for micro electomechanical system(MEMS). SOLUTION: This manufacturing method includes a step for preparing a crystalline wafer, and a step for processing, at least, a micro machine device, at least, having a single longitudinal axis, an elongated opening part, and/or a cavity. The longitudinal axis forms an angle to the direction extending along an intersecting line between the surface of the wafer and a cleavage plane and the cleavage plane is regulated as a surface most frequently causing cleavages of the wafer.

5. 发明专利

DE60309125D1 未知
公开(公告)号：DE60309125D1
公开(公告)日：2006-11-30
申请号：DE60309125
申请日：2003-12-23
申请人： IMEC INTER UNI MICRO ELECTR
发明人： RUSU CRISTINA , WITVROUW ANN
IPC分类号： B81B7/00

6. 发明专利

DE60309125T2 未知
公开(公告)号：DE60309125T2
公开(公告)日：2007-08-30
申请号：DE60309125
申请日：2003-12-23
申请人： IMEC INTER UNI MICRO ELECTR
发明人： RUSU CRISTINA , WITVROUW ANN
IPC分类号： B81B7/00

7. 发明专利

AT342870T 未知
公开(公告)号：AT342870T
公开(公告)日：2006-11-15
申请号：AT03079178
申请日：2003-12-23
申请人： IMEC INTER UNI MICRO ELECTR
发明人： RUSU CRISTINA , WITVROUW ANN
IPC分类号： B81B7/00

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