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1. 发明申请

US20120206127A1 MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 有权
标题翻译：测量和控制脉冲RF偏置加工中的波动潜能
公开(公告)号：US20120206127A1
公开(公告)日：2012-08-16
申请号：US13456122
申请日：2012-04-25
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： G01R19/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

2. 发明申请

US20130050892A1 MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：测量和控制脉冲RF偏置加工中的波动潜能
公开(公告)号：US20130050892A1
公开(公告)日：2013-02-28
申请号：US13663393
申请日：2012-10-29
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/683
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

3. 发明授权

US08192576B2 Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing 有权
标题翻译：用于测量和控制脉冲RF偏置处理中的晶片电位的方法和装置
公开(公告)号：US08192576B2
公开(公告)日：2012-06-05
申请号：US11805607
申请日：2007-05-23
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

4. 发明授权

US08303763B2 Measuring and controlling wafer potential in pulsed RF bias processing 有权
标题翻译：测量和控制脉冲RF偏压处理中的晶圆电位
公开(公告)号：US08303763B2
公开(公告)日：2012-11-06
申请号：US13456122
申请日：2012-04-25
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

5. 发明申请

US20100315064A1 Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing 有权
标题翻译：用于测量和控制脉冲RF偏置处理中的晶片电位的方法和装置
公开(公告)号：US20100315064A1
公开(公告)日：2010-12-16
申请号：US11805607
申请日：2007-05-23
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： G01R1/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

6. 发明授权

US06890774B2 System and method for creating a substrate signature 有权
标题翻译：用于创建衬底签名的系统和方法
公开(公告)号：US06890774B2
公开(公告)日：2005-05-10
申请号：US10310591
申请日：2002-12-04
申请人： Janet M. Flanner , James C. Vetter
发明人： Janet M. Flanner , James C. Vetter
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L21/67276 , Y10T29/41
摘要： The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.
摘要翻译：本发明是一种用于创建在半导体或数据存储制造设备中制造的衬底的签名的系统。中央处理单元被配置为从位于设施内的多个设备类型接收外部传感器数据，并且通过将数据组合成整体来整合外部传感器数据，以创建基板的签名。此外，本发明是一种通过从设备处理线选择基板来创建基板的签名的方法，从多个设备类型接收与该基板相关联的外部传感器数据，并且将与该基板相关联的外部传感器数据衬底以产生衬底的签名。所创建的基板签名也可以与其他基板签名进行比较，以电子诊断过程，与该过程相关联的设备或经处理的基板。

7. 发明授权

US06946303B2 Electronically diagnosing a component in a process line using a substrate signature 有权
标题翻译：使用底物签名电子诊断工艺线中的部件
公开(公告)号：US06946303B2
公开(公告)日：2005-09-20
申请号：US10310461
申请日：2002-12-04
申请人： Janet M. Flanner , James C. Vetter
发明人： Janet M. Flanner , James C. Vetter
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L21/67276 , G05B2219/45031 , G05B2219/50197 , Y10T29/41
摘要： The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.
摘要翻译：本发明是一种用于创建在半导体或数据存储制造设备中制造的衬底的签名的系统。中央处理单元被配置为从位于设施内的多个设备类型接收外部传感器数据，并且通过将数据组合成整体来整合外部传感器数据，以创建基板的签名。此外，本发明是一种通过从设备处理线选择基板来创建基板的签名的方法，从多个设备类型接收与该基板相关联的外部传感器数据，并且将与该基板相关联的外部传感器数据衬底以产生衬底的签名。所创建的基板签名也可以与其他基板签名进行比较，以电子诊断过程，与该过程相关联的设备或经处理的基板。

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