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1. 发明授权

US08796404B2 Polymer for optical film, method of preparing same, and optical film including same 有权
标题翻译：用于光学膜的聚合物，其制备方法和包括其的光学膜
公开(公告)号：US08796404B2
公开(公告)日：2014-08-05
申请号：US13545608
申请日：2012-07-10
申请人： Hyung Jun Kim , Myung-Sup Jung , Won Cheol Jung , Jong-Hoon Won , Kyu Yeol In
发明人： Hyung Jun Kim , Myung-Sup Jung , Won Cheol Jung , Jong-Hoon Won , Kyu Yeol In
IPC分类号： C08F26/06 , C08F226/06 , C08F232/04
CPC分类号： C08F26/06
摘要： A polymer for an optical film including: a repeating unit A including a repeating unit represented by the following Chemical Formula 1; and a repeating unit B derived from a monomer including an unsaturated bond copolymerizable with the repeating unit A: wherein, in Chemical Formula 1, the variables R1 to R9 are defined herein.
摘要翻译：一种用于光学膜的聚合物，包括：包含由以下化学式1表示的重复单元的重复单元A; 以及衍生自包含可与重复单元A共聚的不饱和键的单体的重复单元B.其中，在化学式1中，本文定义了变量R1至R9。

2. 发明申请

US20120133873A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20120133873A1
公开(公告)日：2012-05-31
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1333 , H01L33/16
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

3. 外观设计

USD616163S1 Door for drum-type washing machine 有权
公开(公告)号：USD616163S1
公开(公告)日：2010-05-18
申请号：US29321912
申请日：2008-07-25
申请人： Yeon Young Nam , Hee Jae Jeong , Hyung Jun Kim , Sei Ill Jeon
设计人： Yeon Young Nam , Hee Jae Jeong , Hyung Jun Kim , Sei Ill Jeon

4. 发明授权

US08755019B2 Method for manufacturing a liquid crystal display 有权
标题翻译：液晶显示器的制造方法
公开(公告)号：US08755019B2
公开(公告)日：2014-06-17
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

5. 外观设计

USD693073S1 Vacuum cleaner 有权
公开(公告)号：USD693073S1
公开(公告)日：2013-11-05
申请号：US29410971
申请日：2012-01-13
申请人： Lim Eun-Sun , Hyung Jun Kim , Dong Won Chun
设计人： Lim Eun-Sun , Hyung Jun Kim , Dong Won Chun

6. 发明授权

US08421060B2 Reconfigurable logic device using spin accumulation and diffusion 有权
标题翻译：可重构逻辑器件使用自旋积累和扩散
公开(公告)号：US08421060B2
公开(公告)日：2013-04-16
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
IPC分类号： H01L29/82 , H01L29/66
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译：逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。

7. 发明授权

US08183611B2 Spin transistor using N-type and P-type double carrier supply layer structure 有权
标题翻译：旋转晶体管采用N型和P型双载体供电层结构
公开(公告)号：US08183611B2
公开(公告)日：2012-05-22
申请号：US12858702
申请日：2010-08-18
申请人： Hyung Jun Kim , Jin Dong Song , Hyun Cheol Koo , Kyung Ho Kim , Suk Hee Han
发明人： Hyung Jun Kim , Jin Dong Song , Hyun Cheol Koo , Kyung Ho Kim , Suk Hee Han
IPC分类号： H01L29/76
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1675 , G11C11/18 , Y10S257/902
摘要： A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.
摘要翻译：一种自旋晶体管，包括：包括上包层和下包层的半导体衬底，以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极，其中所述半导体衬底包括具有第一导电性的第一载流子供应层类型，其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层，其形成在所述上包层上并且将所述载流子提供给所述沟道层。

8. 外观设计

USD534556S1 Refrigerator 有权
公开(公告)号：USD534556S1
公开(公告)日：2007-01-02
申请号：US29257222
申请日：2006-03-30
申请人： Young Seok Lee , Hyung Jun Kim
设计人： Young Seok Lee , Hyung Jun Kim

9. 发明授权

US06818095B1 Chemical mechanical polishing apparatus 失效
标题翻译：化学机械抛光装置
公开(公告)号：US06818095B1
公开(公告)日：2004-11-16
申请号：US10720415
申请日：2003-11-24
申请人： Hyung Jun Kim
发明人： Hyung Jun Kim
IPC分类号： B24B100
CPC分类号： B24B37/14
摘要： Disclosed is a chemical mechanical polishing apparatus. A plurality of support poles, the heights and locations of which can be controlled and moved, are installed on a circular rotary table. A platen for polishing the surface of a wafer are divided in given shapes and are then attached to the plurality of the support poles, respectively. A chemical mechanical polishing process is performed in a state the platens are assembled to have a desired shape by moving the support poles or the pressure applied to the wafer is controlled every region by controlling the height of the support poles. Therefore, the present invention has an effect that it can obtain a uniform polishing characteristic by controlling the degree of polishing depending on regions of the wafer.
摘要翻译：公开了一种化学机械抛光装置。可以控制和移动高度和位置的多个支撑杆安装在圆形旋转台上。用于抛光晶片表面的压板被分成给定的形状，然后分别附接到多个支撑极。在通过移动支撑杆而将压板组装成具有期望形状的状态下执行化学机械抛光工艺，或者通过控制支撑杆的高度来控制施加到晶片的压力。因此，本发明的效果是通过根据晶片的区域控制抛光程度来获得均匀的抛光特性。

10. 发明授权

US06541368B2 Metal lines of semiconductor devices and methods for forming 有权
标题翻译：半导体器件的金属线及其形成方法
公开(公告)号：US06541368B2
公开(公告)日：2003-04-01
申请号：US10186902
申请日：2002-06-28
申请人： Hyung Jun Kim
发明人： Hyung Jun Kim
IPC分类号： H01L214763
CPC分类号： H01L21/76801 , H01L21/76829
摘要： Metal lines of a semiconductor device and methods of forming same are disclosed. During a damascene process filling up a metal line in an insulating film, a low-k layer is used as an insulating film. An anchor groove is formed in one portion of the low-k layer. The anchor groove is filled up with an anchor layer. A metal line is formed, which contacts one or more underlying layers through the anchor layer and the interlayer isolation film. As a result, it is possible to prevent a distortion of a metal line and/or damage to a hard-mask layer, thereby improving device productivity and yield.
摘要翻译：公开了半导体器件的金属线及其形成方法。在绝缘膜中填充金属线的镶嵌工艺期间，使用低k层作为绝缘膜。在低k层的一部分中形成锚定槽。锚定槽填充有锚定层。形成金属线，其通过锚定层和层间隔离膜接触一个或多个下层。结果，可以防止金属线的变形和/或硬掩模层的损坏，从而提高器件的生产率和产量。

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