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1. 发明授权

US06348376B2 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same 有权
标题翻译：通过化学气相沉积形成金属氮化物膜的方法和使用其形成金属接触和半导体器件的电容器的方法
公开(公告)号：US06348376B2
公开(公告)日：2002-02-19
申请号：US09765531
申请日：2001-01-19
申请人： Hyun-Seok Lim , Sang-Bom Kang , In-Sang Jeon , Gil-Heyun Choi
发明人： Hyun-Seok Lim , Sang-Bom Kang , In-Sang Jeon , Gil-Heyun Choi
IPC分类号： H01L218242
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45553 , H01L21/28562 , H01L21/76804 , H01L28/91
摘要： A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A/cycle, is suitable for mass production.
摘要翻译：提供了使用化学气相沉积（CVD）形成金属氮化物膜的方法，以及使用其形成半导体器件的金属接触和半导体电容器的方法。使用其中使用金属源和氮源作为前体的化学气相沉积（CVD）形成金属氮化物膜的方法包括以下步骤：将半导体衬底插入淀积室中，使金属源流入沉积物通过切断金属源的流入并将净化气体流入沉积室，去除沉积室中残留的金属源，切断净化气体并使氮源流入沉积室以与金属源反应吸附在半导体衬底上，并且通过切断氮源的流入并将净化气体流入沉积室来除去留在沉积室中的氮源。因此，可以在500℃以下的温度下形成具有低电阻率和低Cl含量的金属氮化物膜，并且可以制造具有优异的漏电流特性的半导体电容器。此外，大约20A /周的沉积速度适合于批量生产。

2. 发明授权

US07410892B2 Methods of fabricating integrated circuit devices having self-aligned contact structures 有权
标题翻译：制造具有自对准接触结构的集成电路器件的方法
公开(公告)号：US07410892B2
公开(公告)日：2008-08-12
申请号：US11375914
申请日：2006-03-15
申请人： Hee-Sook Park , Gil-Heyun Choi , Sang-Bom Kang , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
发明人： Hee-Sook Park , Gil-Heyun Choi , Sang-Bom Kang , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L27/10885 , H01L21/76831 , H01L21/76897 , H01L24/02 , H01L27/10855 , H01L27/10888 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00
摘要： An integrated circuit device, e.g., a memory device, includes a substrate, a first insulation layer on the substrate, and a contact pad disposed in the first insulation layer in direct contact with the substrate. A second insulation layer is disposed on the first insulation layer. A conductive pattern, e.g., a damascene bit line, is disposed in the second insulation layer. A conductive plug extends through the second insulation layer to contact the contact pad and is self-aligned to the conductive pattern. An insulation film may separate the conductive pattern and the conductive plug. A glue layer may be disposed between the conductive pattern and the second insulation layer. The device may further include a third insulation layer on the second insulation layer and the conductive pattern, and the conductive plug may extend through the second and third insulation layers.
摘要翻译：集成电路器件，例如存储器件，包括衬底，衬底上的第一绝缘层，以及设置在与衬底直接接触的第一绝缘层中的接触焊盘。第二绝缘层设置在第一绝缘层上。导电图案，例如镶嵌位线，设置在第二绝缘层中。导电插塞延伸穿过第二绝缘层以接触接触焊盘并且与导电图案自对准。绝缘膜可以分离导电图案和导电插头。胶层可以设置在导电图案和第二绝缘层之间。该器件还可以包括在第二绝缘层和导电图案上的第三绝缘层，并且导电插塞可延伸穿过第二和第三绝缘层。

3. 发明申请

US20070099421A1 Methods For Forming Cobalt Layers Including Introducing Vaporized Cobalt Precursors And Methods For Manufacturing Semiconductor Devices Using The Same 审中-公开
标题翻译：用于形成包含汽化钴前体的钴层的方法和使用其制造半导体器件的方法
公开(公告)号：US20070099421A1
公开(公告)日：2007-05-03
申请号：US11612225
申请日：2006-12-18
申请人： Hyun-Su Kim , Gil-Heyun Choi , Sang-Bom Kang , Woong-Hee Sohn , Jong-Ho Yun , Kwang-Jin Moon
发明人： Hyun-Su Kim , Gil-Heyun Choi , Sang-Bom Kang , Woong-Hee Sohn , Jong-Ho Yun , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518 , H01L21/28556 , H01L21/76889
摘要： The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt precursor has the formula Co2(CO)6(R1—C≡C—R2), wherein R1 is H or CH3, and R2 is H, t-butyl, methyl or ethyl. The silicon substrate is thermally treated so that silicon is reacted with cobalt to form a cobalt silicide layer. Methods for manufacturing semiconductor devices including the cobalt silicide layers described herein and such devices are also provided.
摘要翻译：本发明提供了形成硅化钴层的方法，包括将蒸发的钴前体引入到硅衬底上以形成钴层。蒸发的钴前体具有下式：CO 2 - （CO）6（R 1 - C≡CR2）其中R 1是H或CH 3，R 2是H，叔丁基，甲基或乙基。对硅衬底进行热处理，使得硅与钴反应形成硅化钴层。还提供了用于制造包括本文所述的钴硅化物层的半导体器件的方法和这种器件。

4. 发明申请

US20060251812A1 Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the same 审中-公开
标题翻译：用于形成原子层的方法和包括钽胺衍生物的薄膜和包括其的装置
公开(公告)号：US20060251812A1
公开(公告)日：2006-11-09
申请号：US11458436
申请日：2006-07-19
申请人： Sang-Bom Kang , Byung-Hee Kim , Kyung-In Choi , Gil-Heyun Choi , You-Kyoung Lee , Seong-Geon Park
发明人： Sang-Bom Kang , Byung-Hee Kim , Kyung-In Choi , Gil-Heyun Choi , You-Kyoung Lee , Seong-Geon Park
IPC分类号： C23C16/00
CPC分类号： C23C16/45553 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843
摘要： Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1-C6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.
摘要翻译：可以通过将钽胺衍生物反应物引入到基底上来形成原子层，其中该钽胺衍生物具有下式：Ta（NR 1 N 2）其中R 1，R 2和R 3各自独立地为H（R 3）3，其中R 1，R 2和R 3各自独立地为H 或C 1 -C 6烷基官能团，化学吸附基材上的一部分反应物，从底物除去非化学吸附的反应物并将反应气体引入到衬底以在衬底上形成固体材料。还提供了包括氮化钽（TaN）的薄膜。

5. 发明授权

US07045842B2 Integrated circuit devices having self-aligned contact structures 有权
标题翻译：具有自对准接触结构的集成电路器件
公开(公告)号：US07045842B2
公开(公告)日：2006-05-16
申请号：US10779440
申请日：2004-02-13
申请人： Hee-Sook Park , Gil-Heyun Choi , Sang-Bom Kang , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
发明人： Hee-Sook Park , Gil-Heyun Choi , Sang-Bom Kang , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10885 , H01L21/76831 , H01L21/76897 , H01L24/02 , H01L27/10855 , H01L27/10888 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00
摘要： An integrated circuit device, e.g., a memory device, includes a substrate, a first insulation layer on the substrate, and a contact pad disposed in the first insulation layer in direct contact with the substrate. A second insulation layer is disposed on the first insulation layer. A conductive pattern, e.g., a damascene bit line, is disposed in the second insulation layer. A conductive plug extends through the second insulation layer to contact the contact pad and is self-aligned to the conductive pattern. An insulation film may separate the conductive pattern and the conductive plug. A glue layer may be disposed between the conductive pattern and the second insulation layer. The device may further include a third insulation layer on the second insulation layer and the conductive pattern, and the conductive plug may extend through the second and third insulation layers.
摘要翻译：集成电路器件，例如存储器件，包括衬底，衬底上的第一绝缘层，以及设置在与衬底直接接触的第一绝缘层中的接触焊盘。第二绝缘层设置在第一绝缘层上。导电图案，例如镶嵌位线，设置在第二绝缘层中。导电插塞延伸穿过第二绝缘层以接触接触焊盘并且与导电图案自对准。绝缘膜可以分离导电图案和导电插头。胶层可以设置在导电图案和第二绝缘层之间。该器件还可以包括在第二绝缘层和导电图案上的第三绝缘层，并且导电插塞可延伸穿过第二和第三绝缘层。

6. 发明授权

US07833855B2 Methods of producing integrated circuit devices utilizing tantalum amine derivatives 有权
标题翻译：使用钽胺衍生物生产集成电路器件的方法
公开(公告)号：US07833855B2
公开(公告)日：2010-11-16
申请号：US11474544
申请日：2006-06-26
申请人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
发明人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
IPC分类号： H01L21/8238
CPC分类号： H01L29/6659 , C23C16/34 , C23C16/56 , H01L21/265 , H01L21/28088 , H01L21/28194 , H01L21/28556 , H01L21/76841 , H01L21/823425 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/6656 , H01L29/66583 , H01L29/7833
摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.
摘要翻译：在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。可以使用由化学式Ta（NR1）（NR2R3）3表示的钽胺衍生物，其中R1，R2和R3代表H或C1-C6烷基，形成金属氮化物层。然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

7. 发明申请

US20060240665A1 Methods of producing integrated circuit devices utilizing tantalum amine derivatives 有权
标题翻译：使用钽胺衍生物生产集成电路器件的方法
公开(公告)号：US20060240665A1
公开(公告)日：2006-10-26
申请号：US11474544
申请日：2006-06-26
申请人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
发明人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
IPC分类号： H01L21/44
CPC分类号： H01L29/6659 , C23C16/34 , C23C16/56 , H01L21/265 , H01L21/28088 , H01L21/28194 , H01L21/28556 , H01L21/76841 , H01L21/823425 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/6656 , H01L29/66583 , H01L29/7833
摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.
摘要翻译：在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。由化学式Ta（NR 1）2（NR 2 R 3）3表示的钽胺衍生物，在其中R 1，R 2和R 3均表示H或C 1 -C 6 - / SUB烷基可以用于形成金属氮化物层。然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

8. 发明申请

US20050014365A1 Methods of forming cobalt layers for semiconductor devices 有权
标题翻译：形成半导体器件钴层的方法
公开(公告)号：US20050014365A1
公开(公告)日：2005-01-20
申请号：US10881231
申请日：2004-06-30
申请人： Kwang-Jin Moon , Gil-Heyun Choi , Sang-Bom Kang , Hyun-Su Kim
发明人： Kwang-Jin Moon , Gil-Heyun Choi , Sang-Bom Kang , Hyun-Su Kim
IPC分类号： H01L21/24 , C23C16/16 , C23C16/18 , C23C16/56 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C16/56 , C23C16/16 , C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855
摘要： The present invention provides methods of forming cobalt layers on a structure comprising forming a preliminary cobalt layer on a semiconductor substrate by introducing an organic metal precursor onto the semiconductor substrate and treating a surface of the preliminary cobalt layer under an atmosphere of a hydrogen-containing gas to remove impurities contained in the preliminary cobalt layer. Compositions of cobalt layers are also provided. Further provided are semiconductor devices comprising cobalt layers provided herein.
摘要翻译：本发明提供了在包括在半导体衬底上形成初步钴层的结构上形成钴层的方法，该方法是在有机金属前体引入到半导体衬底上并在含氢气体气氛下处理预钴层的表面以除去预备钴层中所含的杂质。还提供了钴层的组成。还提供了包括本文提供的钴层的半导体器件。

9. 发明授权

US07211506B2 Methods of forming cobalt layers for semiconductor devices 有权
标题翻译：形成半导体器件钴层的方法
公开(公告)号：US07211506B2
公开(公告)日：2007-05-01
申请号：US10881231
申请日：2004-06-30
申请人： Kwang-Jin Moon , Gil-Heyun Choi , Sang-Bom Kang , Hyun-Su Kim
发明人： Kwang-Jin Moon , Gil-Heyun Choi , Sang-Bom Kang , Hyun-Su Kim
IPC分类号： H01L21/4763
CPC分类号： C23C16/56 , C23C16/16 , C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855
摘要： The present invention provides methods of forming cobalt layers on a structure comprising forming a preliminary cobalt layer on a semiconductor substrate by introducing an organic metal precursor onto the semiconductor substrate and treating a surface of the preliminary cobalt layer under an atmosphere of a hydrogen-containing gas to remove impurities contained in the preliminary cobalt layer. Compositions of cobalt layers are also provided. Further provided are semiconductor devices comprising cobalt layers provided herein.
摘要翻译：本发明提供了在包括在半导体衬底上形成初步钴层的结构上形成钴层的方法，该方法是在有机金属前体引入到半导体衬底上并在含氢气体气氛下处理预钴层的表面以除去预备钴层中所含的杂质。还提供了钴层的组成。还提供了包括本文提供的钴层的半导体器件。

10. 发明申请

US20050064706A1 Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same 有权
标题翻译：用于形成钴层的方法包括引入蒸发的钴前体和使用其制备半导体器件的方法
公开(公告)号：US20050064706A1
公开(公告)日：2005-03-24
申请号：US10924034
申请日：2004-08-23
申请人： Hyun-Su Kim , Gil-Heyun Choi , Sang-Bom Kang , Woong-Hee Sohn , Jong-Ho Yun , Kwang-Jin Moon
发明人： Hyun-Su Kim , Gil-Heyun Choi , Sang-Bom Kang , Woong-Hee Sohn , Jong-Ho Yun , Kwang-Jin Moon
IPC分类号： H01L21/24 , H01L21/26 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/42 , H01L21/44 , H01L21/768
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518 , H01L21/28556 , H01L21/76889
摘要： The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt precursor has the formula Co2(CO)6(R1—C≡C—R2), wherein R1 is H or CH3, and R2 is H, t-butyl, methyl or ethyl. The silicon substrate is thermally treated so that silicon is reacted with cobalt to form a cobalt silicide layer. Methods for manufacturing semiconductor devices including the cobalt silicide layers described herein and such devices are also provided.
摘要翻译：本发明提供了形成硅化钴层的方法，包括将蒸发的钴前体引入到硅衬底上以形成钴层。蒸发的钴前体具有式Co 2（CO）6（R 1 -C = CR 2），其中R 1是H或CH 3，R 2是H，叔丁基，甲基或乙基。对硅衬底进行热处理，使得硅与钴反应形成硅化钴层。还提供了用于制造包括本文所述的钴硅化物层的半导体器件的方法和这种器件。

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