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1. 发明申请

US20080099782A1 Nitride semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080099782A1
公开(公告)日：2008-05-01
申请号：US11905434
申请日：2007-10-01
申请人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
发明人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/14 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×102/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
摘要翻译：提供了包括基板的氮化物半导体发光二极管（LED）在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的一部分上的有源层; 形成在有源层上的p型氮化物半导体层; p型接触层，其形成在p型氮化物半导体层上并掺杂有大于1×10 2 / cm 3的p型杂质; 形成在p型接触层上的透明氧化物电极; 形成在透明氧化物电极上的p电极; 以及在没有形成有源层的n型氮化物半导体层上形成的n电极。

2. 发明授权

US08203170B2 Nitride semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08203170B2
公开(公告)日：2012-06-19
申请号：US11905434
申请日：2007-10-01
申请人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
发明人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/14 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×1020/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
摘要翻译：提供了包括基板的氮化物半导体发光二极管（LED）在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的一部分上的有源层; 形成在有源层上的p型氮化物半导体层; p型接触层，形成在p型氮化物半导体层上，掺杂有大于1×1020 / cm3的p型杂质; 形成在p型接触层上的透明氧化物电极; 形成在透明氧化物电极上的p电极; 以及在没有形成有源层的n型氮化物半导体层上形成的n电极。

3. 发明申请

US20100308366A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE 有权
标题翻译：包含多层结构电极的氮化物半导体发光器件
公开(公告)号：US20100308366A1
公开(公告)日：2010-12-09
申请号：US11517343
申请日：2006-09-08
申请人： Pil Geun Kang , Bong Il Yi , Jae Ho Han , Dong Min Jeon
发明人： Pil Geun Kang , Bong Il Yi , Jae Ho Han , Dong Min Jeon
IPC分类号： H01L33/02 , H01L33/12 , H01L33/36
CPC分类号： H01L33/405 , H01L33/32 , H01L2933/0016
摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
摘要翻译：氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

4. 发明授权

US07317745B2 Multi-wavelength laser diode 失效
标题翻译：多波长激光二极管
公开(公告)号：US07317745B2
公开(公告)日：2008-01-08
申请号：US10998921
申请日：2004-11-30
申请人： Tae Sung Jang , Hee Seok Choi , Sang Deog Cho , Dong Min Jeon
发明人： Tae Sung Jang , Hee Seok Choi , Sang Deog Cho , Dong Min Jeon
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/10 , H01S3/08086 , H01S5/028 , H01S5/20
摘要： The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.
摘要翻译：本发明涉及一种多波长激光二极管，其中振荡结构包括半导体衬底，以及在半导体衬底上依次形成的下包层，有源层和脊。第一金属层形成在包括脊的一端的振荡结构的第一面上，并且由在至少预定波长的第一波长范围内具有高反射率的金属制成。第二金属层形成在第一金属层上，第二金属层由在预定波长的第二波长范围内具有高反射率的金属制成。多波长激光二极管可以改善反射层结构，以在整个可见光范围内实现高反射率。

5. 发明授权

US07868344B2 Nitride semiconductor light emitting device including electrodes of a multilayer structure 有权
标题翻译：氮化物半导体发光器件包括多层结构的电极
公开(公告)号：US07868344B2
公开(公告)日：2011-01-11
申请号：US11517343
申请日：2006-09-08
申请人： Pil Geun Kang , Bong Il Yi , Jae Ho Han , Dong Min Jeon
发明人： Pil Geun Kang , Bong Il Yi , Jae Ho Han , Dong Min Jeon
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L2933/0016
摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
摘要翻译：氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

6. 发明授权

US07687821B2 Gallium nitride based light emitting diode 有权
标题翻译：氮化镓基发光二极管
公开(公告)号：US07687821B2
公开(公告)日：2010-03-30
申请号：US11647266
申请日：2006-12-29
申请人： Dong Min Jeon , Jae Ho Han , Pil Geun Kang
发明人： Dong Min Jeon , Jae Ho Han , Pil Geun Kang
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/44 , H01L33/42
摘要： A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.
摘要翻译： GaN基LED包括基板; 在该基板上形成的a型GaN层; 形成在n型GaN层的预定区域上的有源层; 形成在有源层上的p型GaN层; 形成在p型GaN层上的透明电极; 形成在透明电极上的p电极; 在形成有活性层的n型GaN层上形成的n型电极; 以及在所述透明电极和所述n型电极之间形成的所得结构上形成的保护膜，所述保护膜由等离子体氧化的透明层构成。

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