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1. 发明申请

US20070287232A1 BOTTOM GATE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：底部薄膜薄膜晶体管及其制造方法
公开(公告)号：US20070287232A1
公开(公告)日：2007-12-13
申请号：US11760043
申请日：2007-06-08
申请人： Hyuck LIM , Young-soo PARK , Wenxu XIANYU , Hans S. CHO , Huaxiang YIN
发明人： Hyuck LIM , Young-soo PARK , Wenxu XIANYU , Hans S. CHO , Huaxiang YIN
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02686 , H01L27/1281
摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”), in which a polycrystalline channel region having a large grain size is formed relatively simply and easily, includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the gate electrode, forming an amorphous semiconductor layer on the gate insulating layer, patterning the amorphous semiconductor layer to form an amorphous channel region on the gate electrode, melting the amorphous channel region using a laser annealing method to form a melted amorphous channel region, and crystallizing the melted amorphous channel region to form a laterally grown polycrystalline channel region.
摘要翻译：相对简单且容易地形成具有大晶粒尺寸的多晶硅沟道区的底栅薄膜晶体管（“TFT”）的制造方法包括：在基板上形成栅极绝缘层，形成栅极绝缘层所述基板覆盖所述栅极电极，在所述栅极绝缘层上形成非晶半导体层，图案化所述非晶半导体层以在所述栅电极上形成非晶态沟道区域，使用激光退火方法熔化所述非晶态沟道区域以形成熔融无定形并使熔融的无定形沟道区域结晶，形成横向生长的多晶沟道区域。

2. 发明申请

US20110057195A1 POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME 有权
公开(公告)号：US20110057195A1
公开(公告)日：2011-03-10
申请号：US12947002
申请日：2010-11-16
申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
发明人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.

3. 发明申请

US20110263088A1 POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US20110263088A1
公开(公告)日：2011-10-27
申请号：US13173128
申请日：2011-06-30
申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
发明人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
IPC分类号： H01L21/336
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

4. 发明申请

US20090162981A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090162981A1
公开(公告)日：2009-06-25
申请号：US12372541
申请日：2009-02-17
申请人： Huaxiang YIN , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
发明人： Huaxiang YIN , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
IPC分类号： H01L21/84
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/7855
摘要： A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.
摘要翻译：提供薄膜晶体管及其制造方法。薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层，以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极，漏极和沟道层间隔开的栅极。

5. 发明申请

US20070128777A1 POLY-Si THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US20070128777A1
公开(公告)日：2007-06-07
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans CHO
发明人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans CHO
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

6. 发明申请

US20100059744A1 Transistor, inverter including the same and methods of manufacturing transistor and inverter 有权
标题翻译：晶体管，逆变器包括相同的晶体管和逆变器的制造方法
公开(公告)号：US20100059744A1
公开(公告)日：2010-03-11
申请号：US12453106
申请日：2009-04-29
申请人： Huaxiang YIN , Ihun SONG , Sunil KIM , Youngsoo PARK
发明人： Huaxiang YIN , Ihun SONG , Sunil KIM , Youngsoo PARK
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/84 , H01L27/11573 , H01L27/1203 , H01L27/1225 , H01L27/1237 , H01L29/66833 , H01L29/792
摘要： A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.
摘要翻译：晶体管，包括晶体管的反相器，以及制造反相器和晶体管的方法。晶体管的栅极绝缘层具有电荷陷阱区域。通过在电荷陷阱区域中捕获电荷，可以在正（+）方向上移动阈值电压。晶体管可以是增强型氧化物薄膜晶体管（TFT），并且可以用作逆变器的元件。

7. 发明申请

US20070108483A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070108483A1
公开(公告)日：2007-05-17
申请号：US11557360
申请日：2006-11-07
申请人： Hyuk LIM , Takashi NOGUCHI , Jong-man KIM , Kyung-bae PARK , Huaxiang YIN
发明人： Hyuk LIM , Takashi NOGUCHI , Jong-man KIM , Kyung-bae PARK , Huaxiang YIN
IPC分类号： H01L29/76
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.
摘要翻译：具有通过自对准的偏移或轻掺杂漏极（LDD）结构的薄膜晶体管及其制造方法包括：衬底，设置在衬底上的硅层，并且包括沟道区，源极区和漏极区在通道区域的两侧和偏移区域，每个偏移区域设置在沟道区域和沟道区域两侧的源极和漏极区域之一之间，覆盖沟道区域的栅极绝缘层和设置在沟道区域的偏移区域除了源极和漏极区域之外的沟道区域的两侧，以及形成在除偏移区域之外的沟道区域上的栅极层。薄膜晶体管具有在没有附加掩模处理的情况下获得偏移或LDD的结构。

8. 发明申请

US20160233317A1 METHOD OF MANUFACTURING MOS TRANSISTOR WITH STACK OF CASCADED NANOWIRES 审中-公开
标题翻译：使用嵌入式纳米器件制造MOS晶体管的方法
公开(公告)号：US20160233317A1
公开(公告)日：2016-08-11
申请号：US14387830
申请日：2013-08-06
申请人： Huaxiang YIN , Xiaolong MA , Weijia XU , Qiuxia XU , Huilong ZHU
发明人： Huaxiang YIN , Xiaolong MA , Weijia XU , Qiuxia XU , Huilong ZHU
IPC分类号： H01L29/66 , H01L29/423 , H01L29/06
CPC分类号： H01L29/66795 , H01L29/0673 , H01L29/42384 , H01L29/66439 , H01L29/78696
摘要： A MOS transistor with stacked nanowires and a method of manufacturing the same. The transistor may include a stack of cascaded nanowires extending in a first direction on a substrate; a gate stack extending in a second direction across the nanowire stack; source and drain regions disposed on opposite sides of the gate stack in the second direction; and a channel region constituted of the nanowire stack between the source and drain regions. he cascaded nanowires can be formed by repeated operations of etching back, and lateral etching and then filling of grooves, thereby increasing an effective width of the channel, increasing a total area of an effective conductive section, and thus improving a drive current.
摘要翻译：具有堆叠的纳米线的MOS晶体管及其制造方法。晶体管可以包括在衬底上沿第一方向延伸的级联纳米线的叠层; 沿着第二方向跨越纳米线堆叠延伸的栅极堆叠; 源极和漏极区域，设置在栅极堆叠的第二方向的相对侧上; 以及由源区和漏区之间的纳米线叠层构成的沟道区。他级联的纳米线可以通过反复的蚀刻操作形成，横向蚀刻然后填充槽，从而增加通道的有效宽度，增加有效导电部分的总面积，从而提高驱动电流。

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