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    • 7. 发明申请
    • Rechargeable lithium battery
    • 可充电锂电池
    • US20080118835A1
    • 2008-05-22
    • US11889307
    • 2007-08-10
    • So-Hyun HurEuy-Young JungDuck-Chul HwangYong-Chul ParkJong-Hwa LeeJeom-Soo KimJae-Yul RyuJin-Bum Kim
    • So-Hyun HurEuy-Young JungDuck-Chul HwangYong-Chul ParkJong-Hwa LeeJeom-Soo KimJae-Yul RyuJin-Bum Kim
    • H01M4/40H01M4/36H01M4/44H01M4/38
    • H01M4/525H01M4/131H01M4/133H01M4/134H01M4/364H01M4/366H01M4/505H01M10/052H01M10/0525H01M10/0568Y02E60/122
    • The rechargeable lithium battery includes a positive electrode which includes a positive active material, a negative electrode, and an electrolyte which includes a non-aqueous organic solvent and a lithium salt. The positive active material includes a core including at least one of a compound represented by Formula 1 and a compound represented by Formula 2, and a surface-treatment layer which is formed on the core and includes a compound represented by Formula 3. The lithium salt includes LiPF6 and a lithium imide-based compound. LiaNibCocMndMeO2   (1) LihMn2MiO4   (2) M′xPyOz   (3) wherein each of M and M′ is independently selected from the group consisting of an alkali metal, an alkaline-earth metal, a Group 13 element, a Group 14 element, a transition element, a rare earth element, and combinations thereof, 0.95≦a≦1.1, 0≦b≦0.999, 0≦c≦0.999, 0≦d≦0.999, 0.001≦e≦0.2, 0.95≦h≦1.1, 0.001≦i≦0.2, 1≦y≦4, 0≦y≦7, and 2≦z≦30.
    • 可再充电锂电池包括正极,其包括正极活性材料,负极和包含非水有机溶剂和锂盐的电解质。 正极活性物质包括包含由式1表示的化合物和由式2表示的化合物中的至少一种的核心和形成在芯上并包含由式3表示的化合物的表面处理层。锂盐 包括LiPF 6和基于酰亚胺的化合物。 <?in-line-formula description =“In-line Formulas”end =“lead”?> Li Ni Ni Ni Ni> Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn (1)<?in-line-formula description =“In-line Formulas”end =“tail”? > <?in-line-formula description =“In-line Formulas”end =“lead”?> Li (2)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> M' (3)<?in-line-formula description =“In-line 式“end =”tail“?>其中M和M'各自独立地选自碱金属,碱土金属,第13族元素,第14族元素,过渡元素,稀有金属 地球元素及其组合,0.95 <= a <= 1.1,0 <= b <= 0.999,0 <= c <= 0.999,0 <= d <= 0.999 0.001 <= e <= 0.2,0.95 < h <= 1.1,0.001 <= i <= 0.2,1 <= y <= 4,0 <= y <= 7,2 <= z <= 30。
    • 10. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08470703B2
    • 2013-06-25
    • US13105195
    • 2011-05-11
    • Byung-Hak LeeYu-Gyun ShinSang-Woo LeeSun-Ghil LeeJin-Bum KimJoon-Gon Lee
    • Byung-Hak LeeYu-Gyun ShinSang-Woo LeeSun-Ghil LeeJin-Bum KimJoon-Gon Lee
    • H01L21/3205
    • H01L21/28518H01L21/823807H01L21/823814
    • Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
    • 形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。 在包括源极和漏极区域的衬底区域上形成镍(Ni)金属膜。 执行第一热处理工艺,包括以第一斜率从第一温度至第二温度加热包括金属膜的基板,并将包含金属膜的基板在第二温度下保持第一时间段。 然后执行第二热处理工艺,包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底,并将衬底保持在第四温度第二时间段。 第四温度与第二温度不同,第二时间段与第一时间段不同。 依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。