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1. 发明申请

US20070141741A1 Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device 审中-公开
标题翻译：半导体层叠结构及其制造方法
公开(公告)号：US20070141741A1
公开(公告)日：2007-06-21
申请号：US11505406
申请日：2006-08-17
申请人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
发明人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
IPC分类号： C30B21/04 , H01L21/00 , H01L21/336
CPC分类号： C30B29/403 , C30B25/04 , H01L21/02389 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： In a semiconductor laminated structure, a base substrate has a nitride semiconductor crystal plane in an upper surface thereof. A growth blocking film encloses a flow-through pattern which is extended horizontally on the base substrate at a predetermined interval. A nitride semiconductor crystal layer is formed on the base substrate to contact the upper surface thereof between regions of the flow-through pattern and covers the grow blocking film. The semiconductor laminated structure is employed to obtain a nitride semiconductor crystal layer, nitride semiconductor crystal substrate and nitride semiconductor device exhibiting fewer defects and high quality.
摘要翻译：在半导体层叠结构中，基板在其上表面具有氮化物半导体晶体面。生长阻挡膜包围以预定间隔在基底基板上水平延伸的流通图案。氮化物半导体晶体层形成在基底基板上，以与流通图案的区域之间的上表面接触，并覆盖生长阻挡膜。采用半导体层叠结构来获得氮化物半导体晶体层，氮化物半导体晶体基板和具有较少缺陷和高质量的氮化物半导体器件。

2. 发明申请

US20070254459A1 Method of growing non-polar m-plane nitride semiconductor 有权
标题翻译：生长非极性m面氮化物半导体的方法
公开(公告)号：US20070254459A1
公开(公告)日：2007-11-01
申请号：US11790329
申请日：2007-04-25
申请人： Soo Lee , Masayoshi Koike , Sung Jang , Hyo Suh
发明人： Soo Lee , Masayoshi Koike , Sung Jang , Hyo Suh
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02447 , H01L21/02472 , H01L21/02516 , H01L21/0254 , H01L21/02609
摘要： A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.
摘要翻译：一种生长非极性m面氮化物半导体的方法。制备（11-23）平面蓝宝石衬底，在蓝宝石衬底上生长非极性（10-10）氮化物半导体。本发明也可以应用于制造其它m面六边形半导体的方法。

3. 发明申请

US20060286777A1 Method of fabricating nitride-based compound layer, GaN Substrate and vertical structure nitride-based semiconductor light emitting device 有权
标题翻译：氮化物类化合物层的制造方法，GaN衬底和垂直结构氮化物系半导体发光元件
公开(公告)号：US20060286777A1
公开(公告)日：2006-12-21
申请号：US11471697
申请日：2006-06-21
申请人： Soo Lee , Cheol Kim , Jaeun Yoo , Sung Jang , Masayoshi Koike
发明人： Soo Lee , Cheol Kim , Jaeun Yoo , Sung Jang , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

4. 发明申请

US20060091408A1 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US20060091408A1
公开(公告)日：2006-05-04
申请号：US11204226
申请日：2005-08-16
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

5. 发明申请

US20050281179A1 Apparatus for optical disc spin-coating 审中-公开
标题翻译：光盘旋涂装置
公开(公告)号：US20050281179A1
公开(公告)日：2005-12-22
申请号：US11154662
申请日：2005-06-17
申请人： Tae-Sik Kang , Mi Han , Seongkeun Lee , Sung Jang , Hun Seo , Kwang Lee , Youngjun Hong
发明人： Tae-Sik Kang , Mi Han , Seongkeun Lee , Sung Jang , Hun Seo , Kwang Lee , Youngjun Hong
IPC分类号： B29D17/00 , G11B7/00 , G11B7/26
CPC分类号： G11B7/266 , B29D17/005
摘要： The present invention provides an apparatus for optical disc spin-coating that prevents leakage of a photocurable resin due to a capillary phenomenon by controlling a contact area between a cap and a disc so that contamination of the disc and manufacturing errors do not occur. Furthermore, the apparatus of the present invention can manufacture an optical disc having a central portion which is not contaminated by a photocurable resin and in which bubbles are not generated. In addition, the apparatus may further include a vacuum hole formed in the turntable, which can be opened and closed independently from the opening and closing of a vacuum hole formed in the central axis of the turntable, to prevent the lifting of the optical disc when the cap is removed. As a result, operability and the manufacturing efficiency of the apparatus can be increased significantly.
摘要翻译：本发明提供一种用于光盘旋涂的装置，其通过控制盖和盘之间的接触面积来防止毛细管现象引起的光固化树脂的泄漏，从而不会发生盘的污染和制造误差。此外，本发明的装置可以制造具有不被光固化树脂污染的中心部分并且不产生气泡的光盘。此外，该设备还可以包括形成在转盘中的真空孔，其可以独立于形成在转台的中心轴线上的真空孔的打开和关闭而被打开和关闭，以防止在光盘的提升时盖子被移除。结果，可以显着提高装置的可操作性和制造效率。

6. 发明申请

US20070080107A1 Nanoporous membrane and method of fabricating the same 失效
标题翻译：纳米多孔膜及其制造方法
公开(公告)号：US20070080107A1
公开(公告)日：2007-04-12
申请号：US11403870
申请日：2006-04-14
申请人： Seung Yang , Jin Kim , Min Park , Incheol Ryu , Sung Jang , Hwang Kim , Thomas Russell
发明人： Seung Yang , Jin Kim , Min Park , Incheol Ryu , Sung Jang , Hwang Kim , Thomas Russell
IPC分类号： B01D29/00
CPC分类号： B01D67/0034 , B01D69/10 , B01D71/28 , B01D71/40 , B01D71/80 , B01D2323/16 , B01D2323/283 , B01D2325/02
摘要： Provided are a nanoporous membrane and a method of fabricating the same. The nanoporous membrane includes a support, and a separation layer including a plurality of nano-sized pores at a density of 1010/cm2 or greater and a matrix. The nanoporous membrane has a high flux and a high selectivity.
摘要翻译：提供一种纳米多孔膜及其制造方法。纳米多孔膜包括支持体和包含密度为10/10/2以上的多个纳米尺寸孔的分离层和基质。纳米多孔膜具有高通量和高选择性。

7. 发明申请

US20060186517A1 Semiconductor package having improved adhesiveness and ground bonding 有权
公开(公告)号：US20060186517A1
公开(公告)日：2006-08-24
申请号：US11408521
申请日：2006-04-21
申请人： Sung Jang
发明人： Sung Jang
IPC分类号： H01L23/495 , H01L21/50
CPC分类号： H01L24/49 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L24/48 , H01L2224/05553 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/48257 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01027 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor package having improved adhesiveness between the chip paddle and the package body and having improved ground-bonding of the chip paddle. A plurality of through-holes are formed in the chip paddle for increasing the bonding strength of encapsulation material in the package body. A plurality of tabs are formed in the chip paddle may also be used alone or in conjunction with the through-holes to further increase the bonding strength of the encapsulation material in the package body. The tabs provide additional area for the bonding site to ground wires from the semiconductor chip by increasing the length of the chip paddle.

8. 发明申请

US20060151858A1 Leadframe and semiconductor package made using the leadframe 有权
公开(公告)号：US20060151858A1
公开(公告)日：2006-07-13
申请号：US11372597
申请日：2006-03-10
申请人： Byung Ahn , Jae Ku , Young Chung , Suk Ko , Sung Jang , Young Choi , Won Do
发明人： Byung Ahn , Jae Ku , Young Chung , Suk Ko , Sung Jang , Young Choi , Won Do
IPC分类号： H01L23/495
CPC分类号： H01L23/495 , H01L23/3107 , H01L23/49541 , H01L23/49548 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/484 , H01L2224/73265 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85464 , H01L2924/00014 , H01L2924/01002 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： Metal leadframes, semiconductor packages made using the leadframes, and methods of making the leadframes and packages are disclosed. In one embodiment, the leadframe includes a rectangular frame. A chip pad and a plurality of leads are within the frame. The lower side of the chip pad and the leads includes one or more vertically recessed horizontal surfaces. The upper side of the chip pad may include a groove around a chip mounting region. In a package, the chip pad supports a semiconductor chip electrically connected to the leads. The lower side of the chip pad and leads are exposed at an exterior surface of the package body. Encapsulant material underfills the recessed lower surfaces of the chip pad and leads, thereby locking them to the encapsulant material. A wire may be reliably bonded to the chip pad within the groove formed in the upper side thereof.

9. 发明申请

US20050088957A1 Cover sheet of substrate for data storage and method for preparing the same 审中-公开
标题翻译：用于数据存储的基片封面及其制备方法
公开(公告)号：US20050088957A1
公开(公告)日：2005-04-28
申请号：US10973387
申请日：2004-10-27
申请人： Mi Han , Tae Kang , Seongkeun Lee , Sung Jang , Yeongrae Chang
发明人： Mi Han , Tae Kang , Seongkeun Lee , Sung Jang , Yeongrae Chang
IPC分类号： G11B7/24 , G11B23/03
CPC分类号： G11B7/26 , G11B7/24056 , G11B7/254 , G11B7/2542 , G11B7/256 , G11B23/0316
摘要： A cover sheet of a substrate for data storage including a hard coating layer, a plastic containing substrate, and an adhesive layer is provided. Thus, the cover sheet of a uniform thickness can be provided and the substrate for data storage can be provided with scratch resistance and contamination resistance.
摘要翻译：提供了包括硬涂层，含塑料基材和粘合剂层的用于数据存储的基板的覆盖片。因此，可以提供均匀厚度的覆盖片，并且可以提供用于数据存储的基板以提供耐擦伤性和耐污染性。

10. 发明申请

US20050029638A1 Leadframe and semiconductor package made using the leadframe 有权
标题翻译：引线框和使用引线框制成的半导体封装
公开(公告)号：US20050029638A1
公开(公告)日：2005-02-10
申请号：US09845601
申请日：2001-04-27
申请人： Byung Ahn , Jae Ku , Young Chung , Suk Ko , Sung Jang , Young Choi , Won Do
发明人： Byung Ahn , Jae Ku , Young Chung , Suk Ko , Sung Jang , Young Choi , Won Do
IPC分类号： H01L23/31 , H01L23/495
CPC分类号： H01L23/495 , H01L23/3107 , H01L23/49541 , H01L23/49548 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/484 , H01L2224/73265 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85464 , H01L2924/00014 , H01L2924/01002 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： Metal leadframes, semiconductor packages made using the leadframes, and methods of making the leadframes and packages are disclosed. In one embodiment, the leadframe includes a rectangular frame. A chip pad and a plurality of leads are within the frame. The lower side of the chip pad and the leads includes one or more vertically recessed horizontal surfaces. The upper side of the chip pad may include a groove around a chip mounting region. In a package, the chip pad supports a semiconductor chip electrically connected to the leads. The lower side of the chip pad and leads are exposed at an exterior surface of the package body. Encapsulant material underfills the recessed lower surfaces of the chip pad and leads, thereby locking them to the encapsulant material. A wire may be reliably bonded to the chip pad within the groove formed in the upper side thereof.
摘要翻译：公开了使用引线框制造的金属引线框，半导体封装以及制造引线框和封装的方法。在一个实施例中，引线框架包括矩形框架。芯片焊盘和多个引线在框架内。芯片焊盘的下侧和引线包括一个或多个垂直凹入的水平表面。芯片焊盘的上侧可以包括围绕芯片安装区域的凹槽。在封装中，芯片焊盘支撑与引线电连接的半导体芯片。芯片焊盘的下侧和引线在封装体的外表面露出。封装材料底部填充芯片焊盘和引线的凹陷的下表面，从而将它们锁定到密封材料上。电线可以可靠地结合到在其上侧形成的槽内的芯片焊盘。

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