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1. 发明申请

US20070141741A1 Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device 审中-公开
标题翻译：半导体层叠结构及其制造方法
公开(公告)号：US20070141741A1
公开(公告)日：2007-06-21
申请号：US11505406
申请日：2006-08-17
申请人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
发明人： Hyo Suh , Masayoshi Koike , Sung Jang , Soo Lee , Jong Yang , Jin Hong
IPC分类号： C30B21/04 , H01L21/00 , H01L21/336
CPC分类号： C30B29/403 , C30B25/04 , H01L21/02389 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： In a semiconductor laminated structure, a base substrate has a nitride semiconductor crystal plane in an upper surface thereof. A growth blocking film encloses a flow-through pattern which is extended horizontally on the base substrate at a predetermined interval. A nitride semiconductor crystal layer is formed on the base substrate to contact the upper surface thereof between regions of the flow-through pattern and covers the grow blocking film. The semiconductor laminated structure is employed to obtain a nitride semiconductor crystal layer, nitride semiconductor crystal substrate and nitride semiconductor device exhibiting fewer defects and high quality.
摘要翻译：在半导体层叠结构中，基板在其上表面具有氮化物半导体晶体面。生长阻挡膜包围以预定间隔在基底基板上水平延伸的流通图案。氮化物半导体晶体层形成在基底基板上，以与流通图案的区域之间的上表面接触，并覆盖生长阻挡膜。采用半导体层叠结构来获得氮化物半导体晶体层，氮化物半导体晶体基板和具有较少缺陷和高质量的氮化物半导体器件。

2. 发明申请

US20060261323A1 Vertical nitride based semiconductor light emitting device having improved light extraction efficiency 有权
公开(公告)号：US20060261323A1
公开(公告)日：2006-11-23
申请号：US11430982
申请日：2006-05-10
申请人： Hyo Suh , Jin Hong
发明人： Hyo Suh , Jin Hong
IPC分类号： H01L29/06
CPC分类号： H01L33/22 , H01L33/32 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/16 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the active layer. Further, a conductive light scattering layer made of a conductive material is formed on an underside of the substrate. The conductive light scattering layer has light transmissibility of 70% or more and has a rough pattern formed on an outer surface to scatter light.

3. 发明申请

US20210006044A1 INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIERS FOR SILICON PHOTONICS 有权
公开(公告)号：US20210006044A1
公开(公告)日：2021-01-07
申请号：US17024342
申请日：2020-09-17
申请人： Jin Hong , Ranjeet Kumar , Meer Nazmus Sakib , Haisheng Rong , Kimchau Nguyen , Mengyuan Huang , Aliasghar Eftekhar , Christian Malouin , Siamak Amiralizadeh Asl , Saeed Fathololoumi , Ling Liao , Yuliya Akulova , Olufemi Dosunmu , Ansheng Liu
发明人： Jin Hong , Ranjeet Kumar , Meer Nazmus Sakib , Haisheng Rong , Kimchau Nguyen , Mengyuan Huang , Aliasghar Eftekhar , Christian Malouin , Siamak Amiralizadeh Asl , Saeed Fathololoumi , Ling Liao , Yuliya Akulova , Olufemi Dosunmu , Ansheng Liu
IPC分类号： H01S5/50 , G02B27/28 , H01S5/026 , H01S5/30
摘要： Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

4. 发明申请

US20100132779A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100132779A1
公开(公告)日：2010-06-03
申请号：US12597496
申请日：2008-05-29
申请人： Jin Hong , Jae-Ho Kim , Yong-Woo Shin
发明人： Jin Hong , Jae-Ho Kim , Yong-Woo Shin
IPC分类号： H01L31/0352 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/03529 , H01L31/0392 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer.
摘要翻译：太阳能电池包括在基板上的第一电极; 第一电极上的多个柱; 所述第一电极上的半导体层，其中所述半导体层的表面积大于所述第一电极的表面积; 和半导体层上的第二电极。

5. 发明申请

US20100099851A1 SYNTHETIC HYPERGLYCOSYLATED, PROTEASE-RESISTANT POLYPEPTIDE VARIANTS, ORAL FORMULATIONS AND METHODS OF USING THE SAME 审中-公开
公开(公告)号：US20100099851A1
公开(公告)日：2010-04-22
申请号：US12581723
申请日：2009-10-19
申请人： Jin Hong , Scott D. Seiwert , Lawrence M. Blatt
发明人： Jin Hong , Scott D. Seiwert , Lawrence M. Blatt
IPC分类号： C07K14/555
CPC分类号： A61K38/212
摘要： The present invention provides synthetic Type I interferon receptor polypeptide agonists comprising consensus or hybrid Type I interferon receptor polypeptide agonists, containing one or more native or non-native glycosylation sites. The present invention further provides oral formulations of protease-resistant or protease-resistant, hyperglycosylated polypeptide variants, which polypeptide variants lack at least one protease cleavage site found in a parent polypeptide, and thus exhibit increased protease resistance compared to the parent polypeptide, which polypeptide variants further include (1) a carbohydrate moiety covalently linked to at least one non-native glycosylation site not found in the parent protein therapeutic or (2) a carbohydrate moiety covalently linked to at least one native glycosylation site found but not glycosylated in the parent protein therapeutic. The present invention further provides compositions, including oral pharmaceutical compositions, comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides containers, devices, and kits comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides therapeutic methods involving administering an effective amount of an oral pharmaceutical composition comprising a synthetic Type I interferon receptor polypeptide agonist, a hyperglycosylated polypeptide variant, a protease-resistant polypeptide variant, or a hyperglycosylated, protease-resistant polypeptide variant to an individual in need thereof.

6. 发明授权

US07442272B2 Apparatus for manufacturing semiconductor device 有权
标题翻译：半导体器件制造装置
公开(公告)号：US07442272B2
公开(公告)日：2008-10-28
申请号：US10875950
申请日：2004-06-25
申请人： Jeong-sic Jeon , Jin Hong
发明人： Jeong-sic Jeon , Jin Hong
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32623 , H04L25/067 , H04L27/2647 , H04L2025/03414
摘要： An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being processed, thereby compensating for a plasma density that is typically more concentrated at the center of the semiconductor wafer. By mounting a target semiconductor wafer in a chamber region that has a cross-sectional area that is smaller than a cross-sectional area of a plasma source chamber region, a predetermine flow of generated plasma from the source becomes concentrated as it moves toward the semiconductor wafer, particularly at the periphery of the semiconductor wafer. This provides a more uniform plasma density across the entire surface of the target semiconductor wafer than has heretofore been available.
摘要翻译：在半导体器件的制造中，用于改善等离子体的密度和均匀性的装置具有等离子体腔室，其具有复杂的几何形状，这使得等离子体密度在被处理的半导体晶片的周边或边缘处增加，从而补偿等离子体密度这通常更集中在半导体晶片的中心。通过将目标半导体晶片安装在截面积小于等离子体源室区域的截面面积的室区域中，来自源极的产生的等离子体的预定流量随着朝向半导体晶片，特别是在半导体晶片的周边。这提供了比目前可用的目标半导体晶片的整个表面上更均匀的等离子体密度。

7. 发明申请

US20060290636A1 Method and apparatus for driving liquid crystal display device 有权
标题翻译：用于驱动液晶显示装置的方法和装置
公开(公告)号：US20060290636A1
公开(公告)日：2006-12-28
申请号：US11205994
申请日：2005-08-17
申请人： Jin Hong
发明人： Jin Hong
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G2310/0248 , G09G2330/021
摘要： A method for driving a liquid crystal display is provided. In the method, a first pre-charge voltage and a second pre-charge voltage are generated from an external voltage source separated from a data driving integrated circuit. A data line is pre-charged with the first pre-charge voltage during a first period. The data line is charged to reach a target value of a first data signal during a second period. The data line is pre-charged with the second pre-charge voltage during a third period. The data line is charged to reach a target value of a second data signal during a fourth period. A liquid crystal display device is capable of reducing the heating value of a driver that drives the data line.
摘要翻译：提供了一种用于驱动液晶显示器的方法。在该方法中，从与数据驱动集成电路分离的外部电压源产生第一预充电电压和第二预充电电压。数据线在第一时段期间被预先充电第一预充电电压。数据线被充电以在第二时段期间达到第一数据信号的目标值。数据线在第三周期期间预充电具有第二预充电电压。在第四周期期间，数据线被充电以达到第二数据信号的目标值。液晶显示装置能够降低驱动数据线的驱动器的发热值。

8. 发明申请

US20060182716A1 Synthetic hyperglycosylated, protease-resistant polypeptide variants, oral formulations and methods of using the same 审中-公开
公开(公告)号：US20060182716A1
公开(公告)日：2006-08-17
申请号：US11330917
申请日：2006-01-11
申请人： Jin Hong , Scott Seiwert , Lawrence Blatt
发明人： Jin Hong , Scott Seiwert , Lawrence Blatt
IPC分类号： A61K38/21
CPC分类号： A61K38/212
摘要： The present invention provides synthetic Type I interferon receptor polypeptide agonists comprising consensus or hybrid Type I interferon receptor polypeptide agonists, containing one or more native or non-native glycosylation sites. The present invention further provides oral formulations of protease-resistant or protease-resistant, hyperglycosylated polypeptide variants, which polypeptide variants lack at least one protease cleavage site found in a parent polypeptide, and thus exhibit increased protease resistance compared to the parent polypeptide, which polypeptide variants further include (1) a carbohydrate moiety covalently linked to at least one non-native glycosylation site not found in the parent protein therapeutic or (2) a carbohydrate moiety covalently linked to at least one native glycosylation site found but not glycosylated in the parent protein therapeutic. The present invention further provides compositions, including oral pharmaceutical compositions, comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides containers, devices, and kits comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides therapeutic methods involving administering an effective amount of an oral pharmaceutical composition comprising a synthetic Type I interferon receptor polypeptide agonist, a hyperglycosylated polypeptide variant, a protease-resistant polypeptide variant, or a hyperglycosylated, protease-resistant polypeptide variant to an individual in need thereof.

9. 发明授权

US06201824B1 Strongly complex coupled DFB laser series 有权
标题翻译：强耦合DFB激光系列
公开(公告)号：US06201824B1
公开(公告)日：2001-03-13
申请号：US09209860
申请日：1998-12-11
申请人： Jin Hong , Toshihiko Makino
发明人： Jin Hong , Toshihiko Makino
IPC分类号： H01S5125
CPC分类号： H01S5/06258 , H01S5/026 , H01S5/041 , H01S5/0612 , H01S5/1215 , H01S5/1228 , H01S5/22 , H01S5/4025 , H01S5/4031 , H01S5/4087
摘要： A two-dimensional matrix of complex coupled (gain or loss coupled) semiconductor DFB lasers is disclosed. The matrix includes several parallel branches of series lasers, each series having a plurality of lasers which are grown on the same wafer. The parallel branches are combined at either one end or both ends with either an integrated on-chip optical combiner or an external coupler to obtain a single optical output port. Each laser in the series comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodic etching grooves through either the active region or the lossy QW region. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to thereby ensure no substantial interaction between lasers in the series. Bragg wavelengths of lasers from different series interleave with each other or differ incrementally along a cavity length direction. The sub tuning wavelength range covered by one laser in the matrix falls outside of the stopbands of all other lasers which are not only in the same series but also physically close to the designated output port. The laser structure is capable of simultaneous multi-wavelength generation, and/or tunable selectable single wavelength operation, and/or reliable wavelength switching.
摘要翻译：公开了复耦合（增益或损耗耦合）半导体DFB激光器的二维矩阵。该矩阵包括串联激光器的几个平行分支，每个系列具有在同一晶片上生长的多个激光器。并联支路在一端或两端与集成的片上光合并器或外部耦合器组合以获得单个光输出端口。该系列中的每个激光器包括多量子阱有源区和复合耦合光栅，其具有通过有源区或有损QW区通过周期性蚀刻凹槽形成的沿着空腔长度方向的波纹。蚀刻深度被定义为使每个激光器对外部反馈和随机小面变化的实质性不敏感性，从而确保该系列中的激光器之间没有实质的相互作用。来自不同系列的激光器的布拉格波长彼此交错或沿着空腔长度方向递增地不同。矩阵中的一个激光器覆盖的子调谐波长范围落在所有其他不仅在同一系列中，而且物理上靠近指定输出端口的其他激光器的阻带之外。激光器结构能够同时进行多波长生成和/或可调谐可选单波长操作和/或可靠的波长切换。

10. 发明公开

US20240184039A1 Method and Apparatus of Hybrid Integrated Photonics Devices 审中-公开
公开(公告)号：US20240184039A1
公开(公告)日：2024-06-06
申请号：US18111532
申请日：2023-02-18
申请人： Jin Hong , Junqiao Wu , Danqing Wang
发明人： Jin Hong , Junqiao Wu , Danqing Wang
IPC分类号： G02B6/12 , G02F1/225
CPC分类号： G02B6/12004 , G02B6/12021 , G02F1/2257 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142
摘要： Embodiments described herein may be related to optical devices and apparatuses directed to forming waveguides and optical phase modulators that enable high baud rate modulation. In one embodiment, an optical phase modulator includes: photonic optical waveguides having their cladding regions and electrical contacts formed by material with its absolute permittivity near zero (ENZ), and their waveguide core region formed by electro-optical (EO) material or silicon PN junction whose optical refractive index changes with strength of externally applied electrical field. The ENZ material described herein further possesses properties of both optical transparency at operating wavelength and electrical conductivity. The ENZ claddings and electrodes may further have dimensions to enable high externally applied electrical field within waveguide core. The EO material described herein includes but not limited to organic polymers, LiNbO3, liquid crystals. Other embodiments are described and claimed.

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