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1. 发明授权

US07701002B2 Semiconductor device having buried gate electrode and method of fabricating the same 有权
标题翻译：具有掩埋栅电极的半导体器件及其制造方法
公开(公告)号：US07701002B2
公开(公告)日：2010-04-20
申请号：US11608482
申请日：2006-12-08
申请人： Hyeong-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Young-Woong Son
发明人： Hyeong-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Young-Woong Son
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/4236 , H01L27/10876 , H01L27/10891 , H01L29/66621 , H01L29/78
摘要： A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation layer. An insulated gate electrode fills a portion of the gate trench and covers at least one sidewall of the active region. A portion of the gate electrode, that covers at least one sidewall of the active region, extends under a portion of the gate electrode that crosses the active region. An insulating pattern is disposed on the gate electrode.
摘要翻译：半导体器件包括设置在半导体器件中以限定有源区的隔离层。栅极沟槽横跨有源区域设置并延伸到隔离层。绝缘栅电极填充栅极沟槽的一部分并覆盖有源区的至少一个侧壁。覆盖有源区的至少一个侧壁的栅电极的一部分在与有源区交叉的栅电极的一部分之下延伸。绝缘图案设置在栅电极上。

2. 发明申请

US20080003753A1 Semiconductor Device Having Buried Gate Electrode and Method of Fabricating the Same 有权
标题翻译：具有掩埋电极的半导体器件及其制造方法
公开(公告)号：US20080003753A1
公开(公告)日：2008-01-03
申请号：US11608482
申请日：2006-12-08
申请人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Young-Woong Son
发明人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Young-Woong Son
IPC分类号： H01L21/336
CPC分类号： H01L29/4236 , H01L27/10876 , H01L27/10891 , H01L29/66621 , H01L29/78
摘要： A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation layer. An insulated gate electrode fills a portion of the gate trench and covers at least one sidewall of the active region. A portion of the gate electrode, that covers at least one sidewall of the active region, extends under a portion of the gate electrode that crosses the active region. An insulating pattern is disposed on the gate electrode.
摘要翻译：半导体器件包括设置在半导体器件中以限定有源区的隔离层。栅极沟槽横跨有源区域设置并延伸到隔离层。绝缘栅电极填充栅极沟槽的一部分并覆盖有源区的至少一个侧壁。覆盖有源区的至少一个侧壁的栅电极的一部分在与有源区交叉的栅电极的一部分之下延伸。绝缘图案设置在栅电极上。

3. 发明申请

US20100283094A1 SEMICONDUCTOR DEVICE HAVING VERTICAL TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有垂直晶体管的半导体器件及其制造方法
公开(公告)号：US20100283094A1
公开(公告)日：2010-11-11
申请号：US12840599
申请日：2010-07-21
申请人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
发明人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures. A bit line separation insulating layer and a peripheral circuit isolation layer are formed inside the bit line separation trench and the peripheral circuit trench, respectively.
摘要翻译：提供了具有垂直晶体管的半导体器件及其制造方法。该方法包括制备具有单元区域和外围电路区域的半导体衬底。在单元区域的基板上形成沿行方向和列方向二维排列的岛状的垂直栅极结构。每个垂直栅极结构包括半导体柱和围绕半导体柱的中心部分的栅电极。在垂直栅极结构之间的间隙区域的下方，在半导体衬底的内部形成有位线分离沟槽，并且在外围电路区域的半导体衬底的内部形成限制外围电路有源区的外围电路沟道。位线分离沟槽与垂直栅极结构的列方向平行地形成。位线分离绝缘层和外围电路隔离层分别形成在位线分离沟槽和外围电路沟槽内部。

4. 发明授权

US08174065B2 Semiconductor device having vertical transistor and method of fabricating the same 有权
标题翻译：具有垂直晶体管的半导体器件及其制造方法
公开(公告)号：US08174065B2
公开(公告)日：2012-05-08
申请号：US12840599
申请日：2010-07-21
申请人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
发明人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
IPC分类号： H01L29/66
CPC分类号： H01L27/10894 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures. A bit line separation insulating layer and a peripheral circuit isolation layer are formed inside the bit line separation trench and the peripheral circuit trench, respectively.
摘要翻译：提供了具有垂直晶体管的半导体器件及其制造方法。该方法包括制备具有单元区域和外围电路区域的半导体衬底。在单元区域的基板上形成沿行方向和列方向二维排列的岛状的垂直栅极结构。每个垂直栅极结构包括半导体柱和围绕半导体柱的中心部分的栅电极。在垂直栅极结构之间的间隙区域的下方，在半导体衬底的内部形成有位线分离沟槽，并且在外围电路区域的半导体衬底的内部形成限制外围电路有源区的外围电路沟道。位线分离沟槽与垂直栅极结构的列方向平行地形成。位线分离绝缘层和外围电路隔离层分别形成在位线分离沟槽和外围电路沟槽内部。

5. 发明授权

US08053307B2 Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode 有权
标题翻译：制造具有电池外延层的半导体器件的方法部分地覆盖埋电池栅电极
公开(公告)号：US08053307B2
公开(公告)日：2011-11-08
申请号：US12662393
申请日：2010-04-14
申请人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
发明人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
IPC分类号： H01L21/8234
CPC分类号： H01L29/66628 , H01L27/10814 , H01L27/10876 , H01L27/10894 , H01L29/7834
摘要： A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
摘要翻译：半导体器件可以包括具有电池有源区的衬底。可以在电池活性区域中形成电池栅电极。单元栅极覆盖层可以形成在单元栅电极上。至少两个电池外延层可以形成在电池有源区上。至少两个单元外延层中的一个可以延伸到单元栅极覆盖层的一端，并且至少两个单元外延层中的另一个可以延伸到单元栅极覆盖层的相对端。电池杂质区域可以设置在电池活性区域中。电池杂质区域可以对应于至少两个电池外延层中的相应一个。

6. 发明授权

US07728373B2 DRAM device with cell epitaxial layers partially overlap buried cell gate electrode 有权
标题翻译：具有电池外延层的DRAM器件部分地覆盖埋电池栅电极
公开(公告)号：US07728373B2
公开(公告)日：2010-06-01
申请号：US11705109
申请日：2007-02-12
申请人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
发明人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
IPC分类号： H01L21/2842
CPC分类号： H01L29/66628 , H01L27/10814 , H01L27/10876 , H01L27/10894 , H01L29/7834
摘要： A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
摘要翻译：半导体器件可以包括具有电池有源区的衬底。可以在电池活性区域中形成电池栅电极。单元栅极覆盖层可以形成在单元栅电极上。至少两个电池外延层可以形成在电池有源区上。至少两个单元外延层中的一个可以延伸到单元栅极覆盖层的一端，并且至少两个单元外延层中的另一个可以延伸到单元栅极覆盖层的相对端。电池杂质区域可以设置在电池活性区域中。电池杂质区域可以对应于至少两个电池外延层中的相应一个。

7. 发明申请

US20070284647A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070284647A1
公开(公告)日：2007-12-13
申请号：US11705109
申请日：2007-02-12
申请人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
发明人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/66628 , H01L27/10814 , H01L27/10876 , H01L27/10894 , H01L29/7834
摘要： A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
摘要翻译：半导体器件可以包括具有电池有源区的衬底。可以在电池活性区域中形成电池栅电极。单元栅极覆盖层可以形成在单元栅电极上。至少两个电池外延层可以形成在电池有源区上。至少两个单元外延层中的一个可以延伸到单元栅极覆盖层的一端，并且至少两个单元外延层中的另一个可以延伸到单元栅极覆盖层的相对端。电池杂质区域可以设置在电池活性区域中。电池杂质区域可以对应于至少两个电池外延层中的相应一个。

8. 发明授权

US07781285B2 Semiconductor device having vertical transistor and method of fabricating the same 有权
标题翻译：具有垂直晶体管的半导体器件及其制造方法
公开(公告)号：US07781285B2
公开(公告)日：2010-08-24
申请号：US11450936
申请日：2006-06-09
申请人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
发明人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
IPC分类号： H01L21/8242
CPC分类号： H01L27/10894 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures. A bit line separation insulating layer and a peripheral circuit isolation layer are formed inside the bit line separation trench and the peripheral circuit trench, respectively.
摘要翻译：提供了具有垂直晶体管的半导体器件及其制造方法。该方法包括制备具有单元区域和外围电路区域的半导体衬底。在单元区域的基板上形成沿行方向和列方向二维排列的岛状的垂直栅极结构。每个垂直栅极结构包括半导体柱和围绕半导体柱的中心部分的栅电极。在垂直栅极结构之间的间隙区域的下方，在半导体衬底的内部形成有位线分离沟槽，并且在外围电路区域的半导体衬底的内部形成限制外围电路有源区的外围电路沟道。位线分离沟槽与垂直栅极结构的列方向平行地形成。位线分离绝缘层和外围电路隔离层分别形成在位线分离沟槽和外围电路沟槽内部。

9. 发明申请

US20100267210A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100267210A1
公开(公告)日：2010-10-21
申请号：US12662393
申请日：2010-04-14
申请人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
发明人： Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
IPC分类号： H01L21/8239
CPC分类号： H01L29/66628 , H01L27/10814 , H01L27/10876 , H01L27/10894 , H01L29/7834
摘要： A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
摘要翻译：半导体器件可以包括具有电池有源区的衬底。可以在电池活性区域中形成电池栅电极。单元栅极覆盖层可以形成在单元栅电极上。至少两个电池外延层可以形成在电池有源区上。至少两个单元外延层中的一个可以延伸到单元栅极覆盖层的一端，并且至少两个单元外延层中的另一个可以延伸到单元栅极覆盖层的相对端。电池杂质区域可以设置在电池活性区域中。电池杂质区域可以对应于至少两个电池外延层中的相应一个。

10. 发明申请

US20070080385A1 Semiconductor device having vertical transistor and method of fabricating the same 有权
标题翻译：具有垂直晶体管的半导体器件及其制造方法
公开(公告)号：US20070080385A1
公开(公告)日：2007-04-12
申请号：US11450936
申请日：2006-06-09
申请人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
发明人： Bong-Soo Kim , Kang-Yoon Lee , Dong-Gun Park , Jae-Man Yoon , Seong-Goo Kim , Hyeoung-Won Seo
IPC分类号： H01L29/94
CPC分类号： H01L27/10894 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures. A bit line separation insulating layer and a peripheral circuit isolation layer are formed inside the bit line separation trench and the peripheral circuit trench, respectively.
摘要翻译：提供了具有垂直晶体管的半导体器件及其制造方法。该方法包括制备具有单元区域和外围电路区域的半导体衬底。在单元区域的基板上形成沿行方向和列方向二维排列的岛状的垂直栅极结构。每个垂直栅极结构包括半导体柱和围绕半导体柱的中心部分的栅电极。在垂直栅极结构之间的间隙区域的下方，在半导体衬底的内部形成有位线分离沟槽，并且在外围电路区域的半导体衬底的内部形成限制外围电路有源区的外围电路沟道。位线分离沟槽与垂直栅极结构的列方向平行地形成。位线分离绝缘层和外围电路隔离层分别形成在位线分离沟槽和外围电路沟槽内部。

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