专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5821034A Method for forming micro patterns of semiconductor devices 失效
标题翻译：用于形成半导体器件的微图案的方法
公开(公告)号：US5821034A
公开(公告)日：1998-10-13
申请号：US720020
申请日：1996-09-27
申请人： Hyeong Soo Kim , Chang Mun Lim , Ki Ho Baik
发明人： Hyeong Soo Kim , Chang Mun Lim , Ki Ho Baik
IPC分类号： H01L21/30 , G03F7/20
CPC分类号： G03F7/70091 , G03F7/70125 , G03F7/70466
摘要： A method for forming micro patterns of a semiconductor device which uses a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the X-axis direction and a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the Y-axis direction, thereby obtaining the same effect as in the case using two sheets of masks to provide an increase in process margin.
摘要翻译：一种用于形成半导体器件的微图案的方法，该半导体器件使用适于透射仅在X轴方向上的光的空间频率分量的偶极子照明孔径，以及偶极子照明孔径，仅适用于将光的空间频率分量仅在Y 从而获得与使用两片掩模的情况相同的效果，以提高加工余量。

2. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

3. 发明授权

US06537724B1 Photoresist composition for resist flow process, and process for forming contact hole using the same 失效
标题翻译：用于抗蚀剂流程的光刻胶组合物，以及使用其形成接触孔的工艺
公开(公告)号：US06537724B1
公开(公告)日：2003-03-25
申请号：US09704265
申请日：2000-11-01
申请人： Geun Su Lee , Jin Soo Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Geun Su Lee , Jin Soo Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0395 , Y10S430/106
摘要： The present invention provides photoresist resins and photoresist compositions comprising the same, which are useful in a resist flow process. The present invention also provides a process for forming a contact hole pattern using the same. In particular, the photoresist resin of the present invention comprises a mixture of polymers. Preferably, a mixture of a first copolymer and a second copolymer. In one aspect, the first and the second copolymers have different properties. Photoresist compositions of the present invention can be used to reduce or eliminate photoresist overflow during a resist flow process. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and improve standing wave effect.
摘要翻译：本发明提供了包含该光刻胶的光致抗蚀剂树脂和光致抗蚀剂组合物，其可用于抗蚀剂流动过程。本发明还提供一种使用其形成接触孔图案的方法。特别地，本发明的光致抗蚀剂树脂包含聚合物的混合物。优选地，第一共聚物和第二共聚物的混合物。一方面，第一和第二共聚物具有不同的性质。本发明的光刻胶组合物可用于在抗蚀剂流动过程中减少或消除光致抗蚀剂溢出。此外，本发明的光致抗蚀剂组合物允许形成均匀尺寸的图案并改善驻波效应。

4. 发明授权

US06455226B1 Photoresist polymers and photoresist composition containing the same 失效
标题翻译：光阻聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：US06455226B1
公开(公告)日：2002-09-24
申请号：US09704053
申请日：2000-11-01
申请人： Geun Su Lee , Jae Chang Jung , Hyeong Soo Kim , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： C08F23204
CPC分类号： G03F7/0395 , C08F8/02 , C08F222/06 , C08F232/08 , Y10S430/106 , Y10S430/11
摘要： The present invention provides photoresist polymers and photoresist compositions comprising the same. In one aspect, the photoresist polymer is of the Formula: where Y, R1, a, b and c are as described herein. Photoresist compositions of the present invention have good transmittance at wavelengths of 193 nm and 157 nm, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in aqueous TMAH solution, and are therefore suitable for lithography processes using VUV (157 nm) and EUV (13 nm) wavelength-light sources for fabricating a minute circuit of a high integration semiconductor device.
摘要翻译：本发明提供了包含其的光致抗蚀剂聚合物和光致抗蚀剂组合物。在一个方面，光致抗蚀剂聚合物具有下式：其中Y，R 1，a，b和c如本文所述。本发明的光致抗蚀剂组合物在193nm和157nm的波长下具有良好的透光率，耐腐蚀性，耐热性和粘合性。此外，本发明的光致抗蚀剂组合物可以在TMAH水溶液中容易地开发，因此适用于使用VUV（157nm）和EUV（13nm）波长光源的光刻工艺，用于制造高集成度的微小电路半导体器件。

5. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

6. 发明授权

US06312868B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06312868B1
公开(公告)日：2001-11-06
申请号：US09501096
申请日：2000-02-09
申请人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

7. 发明授权

US06797451B2 Reflection-inhibiting resin used in process for forming photoresist pattern 失效
标题翻译：用于形成光致抗蚀剂图案的工艺中使用的反射抑制树脂
公开(公告)号：US06797451B2
公开(公告)日：2004-09-28
申请号：US10189056
申请日：2002-07-03
申请人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
发明人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/32 , G03F7/091 , Y10S430/111 , Y10S430/122
摘要： The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.
摘要翻译：本发明提供下式的树脂：其中R1，R2，R3，x和y是本文定义的那些。本发明还提供了在光致抗蚀剂图案形成工艺期间使用上述树脂抑制来自晶片衬底的下层的光的反射的方法。

8. 发明授权

US06482565B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06482565B1
公开(公告)日：2002-11-19
申请号：US09448964
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C07D407/12 , C07D317/12 , C07D319/06
摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.
摘要翻译：本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮，包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

9. 发明授权

US06368773B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06368773B1
公开(公告)日：2002-04-09
申请号：US09448916
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
IPC分类号： G03F7027
CPC分类号： C08F216/38 , C07C43/303 , C08F220/06 , G03F7/0382
摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.
摘要翻译：本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

10. 发明授权

US06699644B1 Process for forming a photoresist pattern comprising alkaline treatment 失效
标题翻译：用于形成包含碱处理的光致抗蚀剂图案的方法
公开(公告)号：US06699644B1
公开(公告)日：2004-03-02
申请号：US09651443
申请日：2000-08-30
申请人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/091 , G03F7/0395 , G03F7/168 , Y10S430/151
摘要： The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.
摘要翻译：本发明提供一种减少或消除在光致抗蚀剂膜上形成不良图案的方法，其通过在曝光之前使光致抗蚀剂膜与碱性溶液接触。本发明的方法显着地减少或防止T顶部和顶部损失。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式