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1. 发明申请

US20130329489A1 MAGNETO-RESISTIVE MEMORY DEVICE INCLUDING SOURCE LINE VOLTAGE GENERATOR 有权
标题翻译：包括源极线电压发生器的磁电阻存储器件
公开(公告)号：US20130329489A1
公开(公告)日：2013-12-12
申请号：US13832101
申请日：2013-03-15
申请人： HYE-JIN KIM , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
发明人： HYE-JIN KIM , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C5/147 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1697
摘要： A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.
摘要翻译： MRAM包括自旋转移转矩磁随机存取存储器（STT-MRAM）单元的存储单元阵列和通常连接到多个STT-MRAM单元的源极线。源极线电压发生器响应于外部电源电压产生源极线驱动电压，并将源极线驱动电压提供给源极线。

2. 发明授权

US09036406B2 Magneto-resistive memory device including source line voltage generator 有权
标题翻译：磁阻存储器件包括源极线电压发生器
公开(公告)号：US09036406B2
公开(公告)日：2015-05-19
申请号：US13832101
申请日：2013-03-15
申请人： Hye-Jin Kim , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
发明人： Hye-Jin Kim , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
IPC分类号： G11C11/00 , G11C11/16 , G11C5/14
CPC分类号： G11C11/1675 , G11C5/147 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1697
摘要： A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.
摘要翻译： MRAM包括自旋转移转矩磁随机存取存储器（STT-MRAM）单元的存储单元阵列和通常连接到多个STT-MRAM单元的源极线。源极线电压发生器响应于外部电源电压产生源极线驱动电压，并将源极线驱动电压提供给源极线。

3. 发明申请

US20100232213A1 CONTROL SIGNAL TRANSMITTING SYSTEM OF A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的控制信号传输系统
公开(公告)号：US20100232213A1
公开(公告)日：2010-09-16
申请号：US12711586
申请日：2010-02-24
申请人： Hyong-Ryol Hwang , Chi-Sung Oh , Sang-Kyu Kang
发明人： Hyong-Ryol Hwang , Chi-Sung Oh , Sang-Kyu Kang
IPC分类号： G11C11/24 , G11C7/00 , G11C8/18
CPC分类号： G11C7/1048 , G11C7/1051 , G11C7/1069 , G11C7/22 , G11C7/222 , G11C11/4076 , G11C11/4091 , G11C11/4096
摘要： Exemplary embodiments relate to a control signal driving device of a semiconductor device, including: a bus line; a converter receiving a first periodic control signal having the period (frequency) of a clock signal, converting the first periodic control signal into a converted control signal that has twice the period (half the frequency) of the clock signal, and outputting the converted control signal to the bus line; and a restoring unit connected to the opposite end of the bus line and receiving the converted control signal and restoring the converted control signal back into the first periodic control signal.
摘要翻译：示例性实施例涉及半导体器件的控制信号驱动装置，包括：总线; 接收具有时钟信号的周期（频率）的第一周期性控制信号的转换器，将所述第一周期性控制信号转换成具有所述时钟信号的两倍周期（一半频率）的转换控制信号，并输出所述转换控制信号到总线; 以及恢复单元，连接到总线的相对端并接收转换的控制信号，并将转换的控制信号恢复到第一周期性控制信号中。

4. 发明申请

US20050190932A1 Streophonic apparatus having multiple switching function and an apparatus for controlling sound signal 审中-公开
标题翻译：具有多重切换功能的立体声装置和用于控制声音信号的装置
公开(公告)号：US20050190932A1
公开(公告)日：2005-09-01
申请号：US10659750
申请日：2003-09-11
申请人： Min-Hwan Woo , Duk-Gyoo Kim , Il-Sun Kang , Il-Hyung Lee , Sung-Heum Baek , Sang-Kyu Kang
发明人： Min-Hwan Woo , Duk-Gyoo Kim , Il-Sun Kang , Il-Hyung Lee , Sung-Heum Baek , Sang-Kyu Kang
IPC分类号： H04R3/00 , B60R11/02 , H03G3/00 , H03G3/20 , H04H1/00 , H04H40/36 , H04M1/60 , H04M11/00 , H04Q7/20 , H04Q7/38 , H04R5/00 , H04R5/04 , H04S1/00 , H04S7/00 , H04W88/02 , H04W92/08
CPC分类号： H04H40/36
摘要： The present invention, related to a stereophonic apparatus having multiple switching function which mixes the sound signals output from multiple sound apparatuses to output them at once and enables to output multiply or selectively, has an audio signal generating unit for generating an audio signal, a sound signal controlling unit for outputting a sound signal to a sound signal input terminal of an external sound apparatus and controlling path of a sound signal output from a sound signal output terminal of said external sound apparatus, a mixing unit for generating a mixed sound signal by mixing an audio signal input from said audio signal generating unit and a sound signal input through said sound signal controlling unit, an audio amplifying unit for amplifying a mixed sound signal input from said mixing unit, and an output unit for outputting a mixed sound signal amplified by said audio amplifying unit.
摘要翻译：本发明涉及一种具有多重切换功能的立体声装置，它具有一个音频信号产生单元，用于产生一个音频信号，一个声音信号控制单元，用于将声音信号输出到外部声音设备的声音信号输入端子，并且控制从所述外部声音设备的声音信号输出端子输出的声音信号的路径;混合单元，用于通过混合产生混合声音信号从所述音频信号产生单元输入的音频信号和通过所述声音信号控制单元输入的声音信号，用于放大从所述混合单元输入的混合声音信号的音频放大单元，以及输出单元，用于输出由所述音频放大单元。

5. 发明申请

US20090309107A1 Nitride Micro Light Emitting Diode With High Brightness and Method For Manufacturing the Same 失效
标题翻译：具有高亮度的氮化物微发光二极管及其制造方法
公开(公告)号：US20090309107A1
公开(公告)日：2009-12-17
申请号：US12545795
申请日：2009-08-21
申请人： Sang-Kyu Kang
发明人： Sang-Kyu Kang
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/32 , H01L33/42 , H01L33/44
摘要： The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
摘要翻译：本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO2，Si3N4，DBR（ZrO2 / SiO2HfO2 / SiO 2），聚酰胺等填充在微尺寸的发光柱之间的间隙中，通过CMP处理使发光体列阵列的顶面11和间隙填充材料平坦化，然后将具有大尺寸的透明电极6 在其上形成区域，从而可以同时驱动所有发光柱。另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

6. 发明授权

US07906787B2 Nitride micro light emitting diode with high brightness and method for manufacturing the same 失效
标题翻译：具有高亮度的氮化物微型发光二极管及其制造方法
公开(公告)号：US07906787B2
公开(公告)日：2011-03-15
申请号：US12545795
申请日：2009-08-21
申请人： Sang-Kyu Kang
发明人： Sang-Kyu Kang
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L33/32 , H01L33/42 , H01L33/44
摘要： The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
摘要翻译：本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO2，Si3N4，DBR（ZrO2 / SiO2HfO2 / SiO 2），聚酰胺等填充在微尺寸的发光柱之间的间隙中，通过CMP处理使发光体列阵列的顶面11和间隙填充材料平坦化，然后将具有大尺寸的透明电极6 在其上形成区域，从而可以同时驱动所有发光柱。另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

7. 发明授权

US07595511B2 Nitride micro light emitting diode with high brightness and method of manufacturing the same 失效
标题翻译：氮化物微型发光二极管具有高亮度和制造方法
公开(公告)号：US07595511B2
公开(公告)日：2009-09-29
申请号：US10567482
申请日：2003-08-08
申请人： Sang-Kyu Kang
发明人： Sang-Kyu Kang
IPC分类号： H01L33/00 , H01L29/18
CPC分类号： H01L33/08 , H01L33/32 , H01L33/42 , H01L33/44
摘要： The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
摘要翻译：本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微小尺寸的发光柱10，诸如SiO 2，Si 3 N 4，DBR（ZrO 2 / SiO 2 HfO 2 / SiO 2），聚酰胺等填充在微小尺寸的发光柱之间的间隙中，通过CMP处理将发光体列阵的顶表面11和间隙填充材料平坦化，然后将透明电极6 在其上形成大面积，从而可以同时驱动所有的发光支柱。另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

8. 发明申请

US20060208273A1 Nitride micro light emitting diode with high brightness and method of manufacturing the same 失效
标题翻译：氮化物微型发光二极管具有高亮度和制造方法
公开(公告)号：US20060208273A1
公开(公告)日：2006-09-21
申请号：US10567482
申请日：2003-08-08
申请人： Sang-Kyu Kang
发明人： Sang-Kyu Kang
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/32 , H01L33/42 , H01L33/44
摘要： The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
摘要翻译：本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO 2的间隙填充材料，，Si 3 N 4，DBR（ZrO 2 / SiO 2 HfO 2）2， / SiO 2），聚酰胺等填充在微型发光柱之间的间隙中，通过CMP处理将发光体列阵列的顶面11和间隙填充材料平坦化，则形成面积大的透明电极6，能够同时驱动所有的发光支柱。另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

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