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1. 发明申请

US20080067545A1 Semiconductor device including field effect transistor and method of forming the same 审中-公开
标题翻译：包括场效晶体管的半导体器件及其形成方法
公开(公告)号：US20080067545A1
公开(公告)日：2008-03-20
申请号：US11898978
申请日：2007-09-18
申请人： Hwa-sung Rhee , Tetsuji Ueno , Ho Lee , Myung-sun Kim , Ji-hye Yi
发明人： Hwa-sung Rhee , Tetsuji Ueno , Ho Lee , Myung-sun Kim , Ji-hye Yi
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A semiconductor device having a field effect transistor according to example embodiments may include a first semiconductor pattern disposed to fill a first recess region and a second semiconductor pattern disposed to fill a second recess region. The first recess region may be shallower than the second recess region and may be disposed adjacent to a channel region. Thus, sufficient stress may be supplied to the channel region to increase the mobility of holes or carriers in a channel and enhance a punchthrough characteristic.
摘要翻译：具有根据示例实施例的场效应晶体管的半导体器件可以包括设置成填充第一凹陷区域的第一半导体图案和设置成填充第二凹陷区域的第二半导体图案。第一凹部区域可以比第二凹部区域浅，并且可以设置在与沟道区域相邻的位置。因此，可以向通道区域提供足够的应力以增加通道中的空穴或载流子的迁移率并增强穿透特性。

2. 发明授权

US07981750B2 Methods of fabrication of channel-stressed semiconductor devices 有权
标题翻译：通道应力半导体器件的制造方法
公开(公告)号：US07981750B2
公开(公告)日：2011-07-19
申请号：US12138502
申请日：2008-06-13
申请人： Hion-suck Baik , Jong-bong Park , Jung-yun Won , Hwa-sung Rhee , Byung-seo Kim , Ho Lee , Myung-sun Kim , Ji-hye Yi
发明人： Hion-suck Baik , Jong-bong Park , Jung-yun Won , Hwa-sung Rhee , Byung-seo Kim , Ho Lee , Myung-sun Kim , Ji-hye Yi
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7843 , H01L29/7848 , Y10S438/938
摘要： In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.
摘要翻译：一方面，提供一种制造半导体器件的方法。该方法包括在PMOS器件的外延源极/漏极区域上形成至少一个覆盖层，在包括至少一个覆盖层并且在相邻的NMOS器件上的PMOS器件上形成应力记忆（SM）层，以及处理SM 形成在NMOS和PMOS器件上的层，以在NMOS器件的沟道区域中引起拉伸应力。

3. 发明授权

US07082051B2 Method and driver for programming phase change memory cell 失效
标题翻译：用于编程相变存储单元的方法和驱动程序
公开(公告)号：US07082051B2
公开(公告)日：2006-07-25
申请号：US10845065
申请日：2004-05-14
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00 , H01L29/02 , H01L31/0376
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

4. 发明授权

US07126847B2 Method and driver for programming phase change memory cell 失效
公开(公告)号：US07126847B2
公开(公告)日：2006-10-24
申请号：US11401866
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

5. 发明申请

US20060181933A1 METHOD AND DRIVER FOR PROGRAMMING PHASE CHANGE MEMORY CELL 失效
公开(公告)号：US20060181933A1
公开(公告)日：2006-08-17
申请号：US11401861
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C16/04
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

6. 发明授权

US06894305B2 Phase-change memory devices with a self-heater structure 有权
标题翻译：具有自加热器结构的相变存储器件
公开(公告)号：US06894305B2
公开(公告)日：2005-05-17
申请号：US10780073
申请日：2004-02-17
申请人： Ji-hye Yi , Horii Hideki , Yong-ho Ha
发明人： Ji-hye Yi , Horii Hideki , Yong-ho Ha
IPC分类号： H01L27/10 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/126 , H01L45/144
摘要： Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.
摘要翻译：相变存储器件包括半导体衬底上的相变存储层。相变存储层具有基本上平行于半导体衬底的长轴的长轴，并且具有与第一表面相对的第一表面和与基本上平行于相变存储层的长轴的第二表面。第一电极设置在半导体衬底上，在相变存储层的第一接触区域中电连接到相变存储层的第一表面。第二电极设置在半导体基板上，在相变存储层的第二接触区域中电连接到相变存储层。第二接触区域是与第一接触区域分开的空间。

7. 发明申请

US20050036364A1 Method and driver for programming phase change memory cell 失效
标题翻译：用于编程相变存储单元的方法和驱动程序
公开(公告)号：US20050036364A1
公开(公告)日：2005-02-17
申请号：US10845065
申请日：2004-05-14
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C13/02 , G11C16/02 , G11C11/00 , G11C19/08
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

8. 发明授权

US07126846B2 Method and driver for programming phase change memory cell 失效
公开(公告)号：US07126846B2
公开(公告)日：2006-10-24
申请号：US11401861
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

9. 发明申请

US20060181931A1 METHOD AND DRIVER FOR PROGRAMMING PHASE CHANGE MEMORY CELL 失效
标题翻译：编程相变记忆细胞的方法与驱动
公开(公告)号：US20060181931A1
公开(公告)日：2006-08-17
申请号：US11401866
申请日：2006-04-12
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C16/06
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

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