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    • 1. 发明授权
    • Organic TFT, method of manufacturing the same and flat panel display device having the same
    • 有机TFT,其制造方法和具有该有机TFT的平板显示装置
    • US07928429B2
    • 2011-04-19
    • US11435849
    • 2006-05-18
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • H01L51/10
    • H01L51/105H01L27/3274H01L51/0021H01L51/0541
    • An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
    • 有机薄膜晶体管(TFT),制造方法和包括有机TFT的显示器。 在TFT中,通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差,不会发生沟道区的断开。 制造有机TFT的方法包括在基板上形成缓冲膜,通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元,在缓冲膜上形成电极层,形成源极和漏极 在凹面单元内通过使用光刻工艺蚀刻电极层,在源极和漏极以及缓冲膜上形成半导体层,在半导体层上形成栅极绝缘膜,并在栅极绝缘膜上形成栅电极。
    • 4. 发明申请
    • Organic TFT, method of manufacturing the same and flat panel display device having the same
    • 有机TFT,其制造方法和具有该有机TFT的平板显示装置
    • US20060270122A1
    • 2006-11-30
    • US11435849
    • 2006-05-18
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • H01L21/84H01L21/00
    • H01L51/105H01L27/3274H01L51/0021H01L51/0541
    • An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
    • 有机薄膜晶体管(TFT),制造方法和包括有机TFT的显示器。 在TFT中,通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差,不会发生沟道区的断开。 制造有机TFT的方法包括在基板上形成缓冲膜,通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元,在缓冲膜上形成电极层,形成源极和漏极 在凹面单元内通过使用光刻工艺蚀刻电极层,在源极和漏极以及缓冲膜上形成半导体层,在半导体层上形成栅极绝缘膜,并在栅极绝缘膜上形成栅电极。
    • 6. 发明申请
    • Organic electroluminescent display device having OTFT and method of fabricating the same
    • 具有OTFT的有机电致发光显示装置及其制造方法
    • US20060091395A1
    • 2006-05-04
    • US11253198
    • 2005-10-18
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • H01L29/786
    • H01L51/10H01L21/31604H01L21/31637H01L21/31691H01L28/40H01L51/0529H01L51/0545
    • An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT. In one embodiment, a gate insulating layer formed below or on the gate electrode of the TFT includes at least an organic insulating layer, and a capacitor dielectric formed between the upper and lower electrodes of the capacitor includes an inorganic insulating layer.
    • 公开了具有有机薄膜晶体管(OTFT)的有机电致发光显示装置及其制造方法。 显示装置可以保持TFT的绝缘性能,同时通过使用用于栅极绝缘层的有机绝缘层和使用用于电容器电介质的无机绝缘层来确保足够的电容。 在一个实施例中,有机电致发光显示装置包括具有电容器区域和晶体管区域的基板,形成在基板的晶体管区域中的TFT,并且具有栅电极,有机半导体层,源电极和漏极 电极,形成在基板的电容器区域中的电容器,并且具有下电极和上电极,以及连接到TFT的源极/漏极之一的显示元件。 在一个实施例中,形成在TFT的栅极电极下面或栅极绝缘层上的至少一个有机绝缘层,形成在电容器的上部和下部电极之间的电容器电介质包括无机绝缘层。
    • 8. 发明授权
    • Organic electroluminescent display device having OTFT and method of fabricating the same
    • 具有OTFT的有机电致发光显示装置及其制造方法
    • US07655943B2
    • 2010-02-02
    • US11253198
    • 2005-10-18
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • H01L29/08
    • H01L51/10H01L21/31604H01L21/31637H01L21/31691H01L28/40H01L51/0529H01L51/0545
    • An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT. In one embodiment, a gate insulating layer formed below or on the gate electrode of the TFT includes at least an organic insulating layer, and a capacitor dielectric formed between the upper and lower electrodes of the capacitor includes an inorganic insulating layer.
    • 公开了具有有机薄膜晶体管(OTFT)的有机电致发光显示装置及其制造方法。 显示装置可以保持TFT的绝缘性能,同时通过使用用于栅极绝缘层的有机绝缘层和使用用于电容器电介质的无机绝缘层来确保足够的电容。 在一个实施例中,有机电致发光显示装置包括具有电容器区域和晶体管区域的基板,形成在基板的晶体管区域中的TFT,并且具有栅电极,有机半导体层,源电极和漏极 电极,形成在基板的电容器区域中的电容器,并且具有下电极和上电极,以及连接到TFT的源极/漏极之一的显示元件。 在一个实施例中,形成在TFT的栅极电极下面或栅极绝缘层上的至少一个有机绝缘层,形成在电容器的上部和下部电极之间的电容器电介质包括无机绝缘层。
    • 10. 发明授权
    • Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor
    • 有机薄膜晶体管,包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
    • US07714321B2
    • 2010-05-11
    • US11378011
    • 2006-03-17
    • Sung-Jin KimJae-Bon KooMin-Chul Suh
    • Sung-Jin KimJae-Bon KooMin-Chul Suh
    • H01L35/24H01L51/00
    • H01L51/0003H01L51/0545
    • An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
    • 公开了一种有机薄膜晶体管,包括该有机薄膜晶体管的平面显示装置和制造该有机薄膜晶体管的方法。 在一个实施例中,有机薄膜晶体管包括:i)衬底,ii)设置在衬底上的栅电极,iii)设置在栅电极上的栅极绝缘膜,iv)与每个间隔开的源电极和漏电极 v)与源电极和漏极接触的有机半导体层,并且具有与相邻的有机薄膜晶体管不同的边缘,以及vi)设置成覆盖有机半导体的悬臂层 接触设置在有机半导体层中或其下方的层的一部分,并且暴露于有机半导体层的边缘的外侧。 根据一个实施例,容易获得有机半导体层的图案化效果,并且提高诸如开/关比的特性。