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1. 发明授权

US08314432B2 Light emitting device with an insulating layer 有权
标题翻译：具有绝缘层的发光器件
公开(公告)号：US08314432B2
公开(公告)日：2012-11-20
申请号：US12349055
申请日：2009-01-06
申请人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
发明人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
IPC分类号： H01L29/18
CPC分类号： H01L25/0753 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units.
摘要翻译：本发明涉及具有绝缘层的发光器件，其包括透明衬底，第一发光单元，第二发光单元，绝缘层和导电层。第一发光单元和第二发光单元设置在透明基板上，其中第二发光单元具有楼梯结构的外观。绝缘层设置在第一和第二发光单元之间。导电层位于绝缘层上，以便传导第一和第二发光单元。由于第二发光单元的楼梯结构的出现，提高绝缘层的包层效率，进一步提高绝缘层的绝缘效率，避免绝缘层松动以及第一和第二发光二极管之间的泄漏单位。

2. 发明申请

US20100032690A1 Light emitting device with an insulating layer 有权
标题翻译：具有绝缘层的发光器件
公开(公告)号：US20100032690A1
公开(公告)日：2010-02-11
申请号：US12349055
申请日：2009-01-06
申请人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
发明人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units.
摘要翻译：本发明涉及具有绝缘层的发光器件，其包括透明衬底，第一发光单元，第二发光单元，绝缘层和导电层。第一发光单元和第二发光单元设置在透明基板上，其中第二发光单元具有楼梯结构的外观。绝缘层设置在第一和第二发光单元之间。导电层位于绝缘层上，以便传导第一和第二发光单元。由于第二发光单元的楼梯结构的出现，提高绝缘层的包层效率，进一步提高绝缘层的绝缘效率，避免绝缘层松动以及第一和第二发光二极管之间的泄漏单位。

3. 发明申请

US20100052494A1 Alternating current light emitting device 有权
标题翻译：交流发光装置
公开(公告)号：US20100052494A1
公开(公告)日：2010-03-04
申请号：US12329770
申请日：2008-12-08
申请人： Hui Ching FENG , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
发明人： Hui Ching FENG , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
IPC分类号： H01J1/00
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/62 , H01L2224/4847 , H01L2224/49107 , Y10S257/918
摘要： An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.
摘要翻译：发现交流（AC）发光器件。 AC发光装置包括基板和布置在基板上的多个发光单元。发光单元由第一半导体层，发光层，第二半导体层，至少一个电极和至少一个第二电极组成，第一半导体层，第一半导体层和第二半导体层分别从底部到顶部布置。多个发光单元通过多个导体耦合到至少一个相邻的发光单元。通过将发光单元与至少一个相邻的发光单元连接的多个导体，一旦导体断开，AC发光器件将不会发生开路。

4. 发明授权

US07956365B2 Alternating current light emitting device with plural conductors of electrodes for coupling to adjacent light emitting unit 有权
标题翻译：具有用于耦合到相邻发光单元的多个电极导体的交流电发光器件
公开(公告)号：US07956365B2
公开(公告)日：2011-06-07
申请号：US12329770
申请日：2008-12-08
申请人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
发明人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
IPC分类号： H01L29/26 , H01L23/12
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/62 , H01L2224/4847 , H01L2224/49107 , Y10S257/918
摘要： An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.
摘要翻译：发现交流（AC）发光器件。 AC发光装置包括基板和布置在基板上的多个发光单元。发光单元由第一半导体层，发光层，第二半导体层，至少一个电极和至少一个第二电极组成，第一半导体层，第一半导体层和第二半导体层分别从底部到顶部布置。多个发光单元通过多个导体耦合到至少一个相邻的发光单元。通过将发光单元与至少一个相邻的发光单元连接的多个导体，一旦导体断开，AC发光器件将不会发生开路。

5. 发明申请

US20090267095A1 Light-Emitting Device with Reflection Layer and Structure of the Reflection Layer 有权
标题翻译：具有反射层的发光装置和反射层的结构
公开(公告)号：US20090267095A1
公开(公告)日：2009-10-29
申请号：US12234652
申请日：2008-09-20
申请人： Wei-Kang CHENG , Shyi-Ming Pan , Cheng-Kuo Huang , Yin-Cheng Chu , Kuo-Chin Huang
发明人： Wei-Kang CHENG , Shyi-Ming Pan , Cheng-Kuo Huang , Yin-Cheng Chu , Kuo-Chin Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/64
摘要： The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
摘要翻译：本发明提供一种具有反射层的发光装置和反射层的结构。反射层包括各种介电材料。反射层包括多个电介质层。除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。由于反射率优异，因此能够提高发光元件的发光效率。

6. 发明授权

US08053797B2 Light-emitting device with reflection layer and structure of the reflection layer 有权
标题翻译：具有反射层和反射层结构的发光装置
公开(公告)号：US08053797B2
公开(公告)日：2011-11-08
申请号：US12234652
申请日：2008-09-20
申请人： Wei-Kang Cheng , Shyi-Ming Pan , Cheng-Kuo Huang , Yin-Cheng Chu , Kuo-Chin Huang
发明人： Wei-Kang Cheng , Shyi-Ming Pan , Cheng-Kuo Huang , Yin-Cheng Chu , Kuo-Chin Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/64
摘要： The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
摘要翻译：本发明提供一种具有反射层的发光装置和反射层的结构。反射层包括各种介电材料。反射层包括多个电介质层。除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。由于反射率优异，因此能够提高发光元件的发光效率。

7. 发明申请

US20100078671A1 Nitride based semiconductor light emitting device 审中-公开
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20100078671A1
公开(公告)日：2010-04-01
申请号：US12354820
申请日：2009-01-16
申请人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
发明人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.
摘要翻译：揭示了一种基于氮化物的半导体发光器件。发光器件包括发光外延层，P型电极和N型电极。 P型电极和N型电极设置在发光外延层上。发光器件的特征在于N型电极布置在P型电极的内侧。 P型电极沿着发光外延层的边缘朝向N型电极延伸，并且N型电极沿着P型电极的内侧向内延伸。通过具有特殊设计的电极图案，发光器件的发光面积增加。

8. 发明申请

US20070176182A1 Structure for integrating LED circuit onto heat-dissipation substrate 审中-公开
标题翻译：将LED电路集成到散热基板上的结构
公开(公告)号：US20070176182A1
公开(公告)日：2007-08-02
申请号：US11340660
申请日：2006-01-27
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/64 , H01L2224/73265 , H05K1/0203 , H05K1/182 , H01L2224/48091 , H01L2924/00014
摘要： A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding area of the LED chip and the series resistance of wires are reduced while the heat dissipation efficiency is enhanced.
摘要翻译：公开了一种将LED电路集成到散热基板上的结构。至少电子部件和LED芯片集成在散热基板上。电子部件可以是无源部件，驱动芯片，静电放电保护装置或感测部件。因此，LED芯片的引线接合面积和电线的串联电阻降低，同时散热效率提高。

9. 发明授权

US08698175B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08698175B2
公开(公告)日：2014-04-15
申请号：US12547571
申请日：2009-08-26
申请人： Wei-Kang Cheng , Jia-Lin Li , Shyi-Ming Pan , Kuo-Chin Huang
发明人： Wei-Kang Cheng , Jia-Lin Li , Shyi-Ming Pan , Kuo-Chin Huang
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/486 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light-emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.
摘要翻译：本发明涉及一种发光二极管（LED）。 LED包括LED管芯，一个或多个金属焊盘和荧光层。本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

10. 发明授权

US08263991B2 Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 有权
标题翻译：发光氮化镓系III-V族化合物半导体器件及其制造方法
公开(公告)号：US08263991B2
公开(公告)日：2012-09-11
申请号：US11979963
申请日：2007-11-13
申请人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
发明人： Kuo-Chin Huang , Shyi-Ming Pan , Cheng-Kuo Huang , Chi-Yang Chuang , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译：公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。因此，电流在导电层上有效地分布。因此，提高了LED的亮度和效率。此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

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