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    • 1. 发明申请
    • LIGHT CONVERGENCE MODULE WITH HEAT DISSIPATION FUNCTION
    • 具有散热功能的光合并模块
    • US20150167953A1
    • 2015-06-18
    • US14324372
    • 2014-07-07
    • KUO-CHIN HUANG
    • KUO-CHIN HUANG
    • F21V29/74F21V13/04F21V5/04
    • F21V19/004F21V13/04F21V19/0035F21V19/0045F21V29/70F21Y2101/00F21Y2115/10
    • A light convergence module with a heat dissipation function is revealed. It comprises a substrate, an assembling unit, a light convergence lampshade, and a heat sink, wherein the assembling unit with a first surface assembling to the substrate and a second surface assembling to the light convergence lampshade comprises a locating block and a plurality of position limiting blocks for respectively engaging with a locating slot and a plurality of position limiting slots of the substrate, and two buckles for correspondingly clasping two concave slots of the substrate to limit the substrate in position, and wherein the heat sink comprises a plurality of interspaces formed between every two adjacent heat dissipation fins for securing the buckles of the assembling unit and allowing the heat sink to closely dispose on the substrate.
    • 揭示了具有散热功能的光汇聚模块。 其包括基板,组装单元,聚光灯罩和散热器,其中具有组装到基板的第一表面的组装单元和组装到聚光灯罩的第二表面包括定位块和多个位置 用于分别与所述基板的定位槽和多个位置限制槽接合的限位块,以及两个带扣,用于相应地夹紧所述基板的两个凹槽以将所述基板限制在适当位置,并且其中所述散热器包括多个间隙 在两个相邻的散热翅片之间,用于固定组装单元的带扣并且允许散热器紧密地布置在基板上。
    • 3. 发明授权
    • Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof
    • 发光氮化镓系III-V族化合物半导体器件及其制造方法
    • US08263991B2
    • 2012-09-11
    • US11979963
    • 2007-11-13
    • Kuo-Chin HuangShyi-Ming PanCheng-Kuo HuangChi-Yang ChuangFen-Ren Chien
    • Kuo-Chin HuangShyi-Ming PanCheng-Kuo HuangChi-Yang ChuangFen-Ren Chien
    • H01L33/00
    • H01L33/405H01L33/32H01L33/40H01L33/46
    • A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
    • 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底,衬底上的n型半导体层,n型半导体层上的有源层,有源层上的p型半导体层,p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极,在p型半导体层上设置电阻反射层或接触窗,使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时,其不被第一电极吸收或屏蔽。 因此,电流在导电层上有效地分布。 因此,提高了LED的亮度和效率。 此外,改善了导电层和p型半导体层之间的粘附性,从而可以提高制造工艺期间的金属剥离问题。
    • 4. 发明申请
    • Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof
    • 发光氮化镓系III-V族化合物半导体器件及其制造方法
    • US20090275156A1
    • 2009-11-05
    • US12458482
    • 2009-07-14
    • Kuo-Chin HuangShyi-Ming PanCheng-Kuo HuangChi-Yang ChuangFen-Ren Chien
    • Kuo-Chin HuangShyi-Ming PanCheng-Kuo HuangChi-Yang ChuangFen-Ren Chien
    • H01L21/20
    • H01L33/405H01L33/32H01L33/40H01L33/46
    • A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
    • 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底,衬底上的n型半导体层,n型半导体层上的有源层,有源层上的p型半导体层,p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极,在p型半导体层上设置电阻反射层或接触窗,使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时,其不被第一电极吸收或屏蔽。 因此,电流在导电层上有效地分布。 因此,提高了LED的亮度和效率。 此外,改善了导电层和p型半导体层之间的粘附性,从而可以提高制造工艺期间的金属剥离问题。
    • 7. 发明授权
    • Hanging tab with sensing chip
    • 悬挂标签与感应芯片
    • US07118043B2
    • 2006-10-10
    • US10885089
    • 2004-07-07
    • Kuo Chin Huang
    • Kuo Chin Huang
    • G06K19/00
    • G09F3/16Y10T428/24331
    • A hanging tab with a sensing chip, when in manufacturing, a fine net section for sewing or knitting and a frame are integrally shaped by injection molding; the frame has a fine net section, and includes an integrally formed fine-net frame surrounding a fine net, and has a sensing-chip frame section with a recess to receive a sensing chip; a sensing-chip cover can be integrally formed with the frame or separately formed, it can cover the recess to seal the sensing chip in the sensing-chip frame section. Thereby, an effect of simplifying the manufacturing process and increasing the speed as well as lowering the cost of production can be acquired.
    • 具有感测芯片的悬挂片,当制造时,用于缝制或编织的细网段和框架通过注射成型一体成型; 框架具有细的网部,并且包括围绕细网的整体形成的细网框架,并且具有感测芯片框架部分,其具有用于接收感测芯片的凹部; 感测芯片盖可以与框架一体地形成或分开形成,它可以覆盖凹部以将感测芯片密封在感测芯片框架部分中。 由此,能够获得简化制造工序,提高速度,降低生产成本的效果。