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1. 发明申请

US20060107890A1 One hundred millimeter single crystal silicon carbide wafer 有权
标题翻译：一百毫米单晶碳化硅晶圆
公开(公告)号：US20060107890A1
公开(公告)日：2006-05-25
申请号：US11248458
申请日：2005-10-12
申请人： Hudson Hobgood , Jason Jenny , David Malta , Valeri Tsvetkov , Calvin Carter , Robert Leonard , George Fechko
发明人： Hudson Hobgood , Jason Jenny , David Malta , Valeri Tsvetkov , Calvin Carter , Robert Leonard , George Fechko
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.
摘要翻译：公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

2. 发明申请

US20060213430A1 Seeded single crystal silicon carbide growth and resulting crystals 有权
标题翻译：种子单晶碳化硅生长并产生晶体
公开(公告)号：US20060213430A1
公开(公告)日：2006-09-28
申请号：US11248579
申请日：2005-10-12
申请人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
发明人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
IPC分类号： C30B23/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

3. 发明申请

US20060130742A1 Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权
公开(公告)号：US20060130742A1
公开(公告)日：2006-06-22
申请号：US11052679
申请日：2005-02-07
申请人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
发明人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
IPC分类号： C30B23/00 , C30B28/12 , C30B25/00
CPC分类号： C30B29/36 , C30B33/02
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

4. 发明申请

US20050126471A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer 有权
标题翻译： 100毫米高纯度半绝缘单晶碳化硅晶圆
公开(公告)号：US20050126471A1
公开(公告)日：2005-06-16
申请号：US10876963
申请日：2004-06-25
申请人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov
发明人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov
IPC分类号： H01L21/205 , C30B23/00 , C30B29/36 , C30B33/00 , H01L21/324 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.
摘要翻译：公开了单个多型单晶碳化硅晶片，其直径大于3英寸且小于5英寸，电阻率大于10,000欧姆 - 厘米，微管密度小于200厘米-2，以及浅层掺杂剂的组合浓度小于5E16 cm -3。

5. 发明申请

US20070283880A1 APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SINGLE CRYSTALS 有权
标题翻译：用于生产块状碳化硅单晶的装置和方法
公开(公告)号：US20070283880A1
公开(公告)日：2007-12-13
申请号：US11089064
申请日：2005-03-24
申请人： Valeri Tsvetkov , David Malta , Jason Jenny
发明人： Valeri Tsvetkov , David Malta , Jason Jenny
IPC分类号： C30B23/00 , C30B25/00 , C30B15/26
CPC分类号： C30B29/36 , C30B23/00 , C30B23/005 , C30B35/002 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T117/102
摘要： An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.
摘要翻译：提供了用于生长碳化硅块状单晶的装置和方法。该装置包括具有硅蒸汽种类相出口的升华室，其允许原子硅蒸汽物质的选择性通过，同时最小化其他气相物种的同时通过。该装置可以提供升华室内气相化学计量的控制，这进而可以允许生产具有降低的固有点缺陷浓度的块状碳化硅单晶。

6. 发明申请

US20050145164A9 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
标题翻译：在含有氢的环境中生长超高纯碳化硅晶体
公开(公告)号：US20050145164A9
公开(公告)日：2005-07-07
申请号：US10628189
申请日：2003-07-28
申请人： David Malta , Jason Jenny , Hudson Hobgood
发明人： David Malta , Jason Jenny , Hudson Hobgood
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.
摘要翻译：公开了一种制备具有受控氮含量的半绝缘碳化硅晶体的方法。该方法包括以下步骤：将含有氢气的环境气体引入升华生长室，将碳化硅源粉末加热到氢气环境生长室中升华，同时加热然后将氢气环境生长室中的碳化硅晶种维持在低于源粉末的温度的第二温度，来自源粉末的第二温度升华物质将在晶种上冷凝，继续加热碳化硅源粉末，直到种子发生所需量的碳化硅晶体生长晶体，同时保持生长室中的氢气的环境浓度足以使结合到生长的碳化硅晶体中的氮的量最小化，并且在升华过程中保持源粉末和晶种在相应的温度下足够高以增加数量在生长晶体中的点缺陷达到使所得碳化硅晶体半绝缘的量。

7. 发明申请

US20050022724A1 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
标题翻译：在含有氢气的环境中生长超高纯碳化硅晶体
公开(公告)号：US20050022724A1
公开(公告)日：2005-02-03
申请号：US10628189
申请日：2003-07-28
申请人： David Malta , Jason Jenny , Hudson Hobgood
发明人： David Malta , Jason Jenny , Hudson Hobgood
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A garment for the transporting, observing, entertaining, training, and displaying of small animals, reptiles and insects (gerbils, mice, snakes, tarantulas, spiders, lizards, etc.) in the tunnels of the garment while on the shoulders of their owners. The garment consists of a see-through, mesh washable fabric panel on top and a brightly colored washable panel underneath, attached to each other using releasable fasteners. The fasteners also provide means to construct tunnel walls and nesting areas for the small animal. The fasteners further provide attachment to the garment tunnel's floor and walls for toys and other paraphernalia to entertain the pet and adorn the garment. This garment allows the owner to hold, observe, and transport his pet without damaging or soiling his clothes while his pet has a tunnel in which to play and rest safely. Also the owner can remove toys, food and nesting material in order to launder the garment.
摘要翻译：在服装的隧道内运送，观察，娱乐，训练和展示小型动物，爬行动物和昆虫（沙鼠，老鼠，蛇，狼蛛，蜘蛛，蜥蜴等）的服装，。服装由顶部的透明，可网眼的织物面板和下面的明亮的可洗涤面板组成，使用可释放的紧固件彼此连接。紧固件还为小动物建造隧道墙和筑巢区域的手段。紧固件还提供了连接到衣物隧道的地板和墙壁上的玩具和其他用具来招待宠物并装饰服装。这种衣服允许所有者在他的宠物有一个可以安全地玩耍和休息的隧道的时候，保持，观察和运送他的宠物，而不会损坏或弄脏他的衣服。此外，业主可以去除玩具，食物和嵌套材料，以洗涤衣服。

8. 发明申请

US20060254505A1 Method and apparatus for the production of silicon carbide crystals 有权
标题翻译：用于生产碳化硅晶体的方法和装置
公开(公告)号：US20060254505A1
公开(公告)日：2006-11-16
申请号：US11128447
申请日：2005-05-13
申请人： Valeri Tsvetkov , David Malta
发明人： Valeri Tsvetkov , David Malta
IPC分类号： C30B23/00 , C30B28/12
CPC分类号： C30B35/00 , C30B23/00 , C30B29/36 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form a plurality of silicon carbide crystal plates. The silicon carbide crystal plates can be used as seed crystals in subsequent sublimation steps in a manner that promotes the growth of silicon carbide crystals in different crystallographic directions to thereby terminate defect formation.
摘要翻译：提供一种生长碳化硅晶体的方法和装置。该装置包括具有多个间隔开的分隔器的升华室，其可以将碳化硅晶体生长的方向引导到分隔器之间的通道中，以形成多个碳化硅晶体板。碳化硅晶体板可以在随后的升华步骤中用作晶种，以促进碳化硅晶体在不同晶向上的生长，从而终止缺陷形成。

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