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1. 发明申请

US20080083366A1 MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE 有权
标题翻译：无碳化硅和相关的制造方法
公开(公告)号：US20080083366A1
公开(公告)日：2008-04-10
申请号：US11854864
申请日：2007-09-13
申请人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
发明人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
IPC分类号： C30B23/00 , C30B25/00
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
摘要翻译：公开了无微波，单晶，碳化硅（SiC）和相关制造方法。通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性，在种子材料上生长游离的SiC晶体。

2. 发明申请

US20050082542A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby 有权
标题翻译：使用由坯形生长的碳化硅漂移层和由此形成的功率半导体器件形成功率半导体器件的方法
公开(公告)号：US20050082542A1
公开(公告)日：2005-04-21
申请号：US10686795
申请日：2003-10-16
申请人： Joseph Sumakeris , Hudson Hobgood , Michael Paisley , Jason Jenny , Calvin Carter , Valeri Tsvetkov
发明人： Joseph Sumakeris , Hudson Hobgood , Michael Paisley , Jason Jenny , Calvin Carter , Valeri Tsvetkov
IPC分类号： C30B29/36 , C30B31/20 , H01L21/04 , H01L29/24 , H01L29/739 , H01L29/78 , H01L29/808 , H01L29/861 , H01L29/868 , H01L31/0312
CPC分类号： H01L29/7813 , C30B29/36 , C30B31/20 , H01L21/0455 , H01L29/6606 , H01L29/66068 , H01L29/8083 , H01L29/861 , H01L29/868
摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
摘要翻译：形成高压碳化硅功率器件的方法利用从高纯度碳化硅晶片材料得到的高纯度碳化硅漂移层，而不是昂贵的外延生长碳化硅层。这些方法包括使用厚度大于约100um的漂移层来形成可支持大于10kV阻断电压的少数载流子和多数载流子功率器件。漂移层形成为其中具有小于约2×10 15 cm -3的净n型掺杂剂浓度的双晶生长碳化硅漂移层。这些n型掺杂剂浓度可以使用中子转换掺杂（NTD）技术来实现。

3. 发明申请

US20070283880A1 APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SINGLE CRYSTALS 有权
标题翻译：用于生产块状碳化硅单晶的装置和方法
公开(公告)号：US20070283880A1
公开(公告)日：2007-12-13
申请号：US11089064
申请日：2005-03-24
申请人： Valeri Tsvetkov , David Malta , Jason Jenny
发明人： Valeri Tsvetkov , David Malta , Jason Jenny
IPC分类号： C30B23/00 , C30B25/00 , C30B15/26
CPC分类号： C30B29/36 , C30B23/00 , C30B23/005 , C30B35/002 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T117/102
摘要： An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.
摘要翻译：提供了用于生长碳化硅块状单晶的装置和方法。该装置包括具有硅蒸汽种类相出口的升华室，其允许原子硅蒸汽物质的选择性通过，同时最小化其他气相物种的同时通过。该装置可以提供升华室内气相化学计量的控制，这进而可以允许生产具有降低的固有点缺陷浓度的块状碳化硅单晶。

4. 发明申请

US20060261347A1 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same 有权
标题翻译：具有双向阻挡能力的高电压碳化硅MOS双极器件及其制造方法
公开(公告)号：US20060261347A1
公开(公告)日：2006-11-23
申请号：US11132355
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
IPC分类号： H01L29/15
CPC分类号： H01L29/7395 , H01L29/1608 , H01L29/66068 , H01L29/66333
摘要： Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
摘要翻译：提供了碳化硅高压半导体器件及其制造方法。这些器件包括电压阻挡衬底。提供具有电压阻挡衬底的绝缘栅双极晶体管。可以提供平面和斜边缘终止。

5. 发明申请

US20070081150A1 Double side polished wafer scratch inspection tool 有权
标题翻译：双面抛光晶圆划痕检测工具
公开(公告)号：US20070081150A1
公开(公告)日：2007-04-12
申请号：US11211061
申请日：2005-08-24
申请人： Robert Leonard , Jason Jenny
发明人： Robert Leonard , Jason Jenny
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N2021/8864
摘要： The invention is a method of inspecting a semiconductor wafer surface for scratches. The method includes positioning a semiconductor wafer for illumination by a radiation source and adjacent a background material that will absorb radiation from the radiation source, directing radiation at a surface of the wafer from the radiation source that has a wavelength that will be absorbed by the fundamental absorption of the wafer, filtering or otherwise limiting the radiation to allow only radiation having wavelengths that are absorbed by the fundamental absorption of the wafer to pass, and detecting radiation scattered on the surface of the wafer and filtered, by position, to thereby identify the location of the scratches on the surface of the wafer, while the absorption of the background material prevents other radiation from the source from interfering with the detection of the scratch-scattered radiation.
摘要翻译：本发明是检查半导体晶片表面以划伤的方法。该方法包括将辐射源定位用于照明的半导体晶片，并且邻近将吸收来自辐射源的辐射的背景材料，从晶片的表面引导辐射，该辐射源具有将被基底部分吸收的波长的辐射源吸收晶片，过滤或以其他方式限制辐射，以允许仅具有被晶片的基本吸收所吸收的波长的辐射通过，并且检测散射在晶片表面上并通过位置过滤的辐射，从而识别在晶片表面上划痕的位置，而背景材料的吸收防止来自源的其它辐射干扰了划痕辐射的检测。

6. 发明申请

US20060261346A1 High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same 审中-公开
公开(公告)号：US20060261346A1
公开(公告)日：2006-11-23
申请号：US11131880
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Anant Agarwal , John Palmour , Hudson Hobgood
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Anant Agarwal , John Palmour , Hudson Hobgood
IPC分类号： H01L31/0312
CPC分类号： H01L29/74 , H01L21/0465 , H01L29/0657 , H01L29/1608 , H01L29/41716 , H01L29/66068 , H01L29/747
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.

7. 发明申请

US20060261345A1 High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same 有权
标题翻译：具有双向阻挡能力的高压碳化硅器件及其制造方法
公开(公告)号：US20060261345A1
公开(公告)日：2006-11-23
申请号：US11131509
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
IPC分类号： H01L31/0312
CPC分类号： H01L29/74 , H01L29/0661 , H01L29/1608
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
摘要翻译：提供高压碳化硅（SiC）器件，例如晶闸管。具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中。 SiC的第二区域具有第一导电类型并且与SiC的第一区域相邻。具有第一导电类型的第二SiC层设置在压电SiC衬底的与第一表面相对的第二表面上。首先，分别在SiC的第一区域，SiC的第二区域和第二SiC层上设置第二和第三触点。还提供了制造高电压SiC器件的相关方法。

8. 发明申请

US20060213430A1 Seeded single crystal silicon carbide growth and resulting crystals 有权
标题翻译：种子单晶碳化硅生长并产生晶体
公开(公告)号：US20060213430A1
公开(公告)日：2006-09-28
申请号：US11248579
申请日：2005-10-12
申请人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
发明人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
IPC分类号： C30B23/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

9. 发明申请

US20060130742A1 Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权
公开(公告)号：US20060130742A1
公开(公告)日：2006-06-22
申请号：US11052679
申请日：2005-02-07
申请人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
发明人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
IPC分类号： C30B23/00 , C30B28/12 , C30B25/00
CPC分类号： C30B29/36 , C30B33/02
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

10. 发明申请

US20050126471A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer 有权
标题翻译： 100毫米高纯度半绝缘单晶碳化硅晶圆
公开(公告)号：US20050126471A1
公开(公告)日：2005-06-16
申请号：US10876963
申请日：2004-06-25
申请人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov
发明人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov
IPC分类号： H01L21/205 , C30B23/00 , C30B29/36 , C30B33/00 , H01L21/324 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.
摘要翻译：公开了单个多型单晶碳化硅晶片，其直径大于3英寸且小于5英寸，电阻率大于10,000欧姆 - 厘米，微管密度小于200厘米-2，以及浅层掺杂剂的组合浓度小于5E16 cm -3。

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