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    • 2. 发明授权
    • Treating method and equipment for coke-cooling wastewater
    • 焦化废水处理方法和设备
    • US07419608B2
    • 2008-09-02
    • US11748829
    • 2007-05-15
    • Hualin WangZhuoqun QianJianwen WangBaohua DaiJiangqing HuShuilong YuChengyu XuTianming HouHejie LiJianghua XuLixin Zhang
    • Hualin WangZhuoqun QianJianwen WangBaohua DaiJiangqing HuShuilong YuChengyu XuTianming HouHejie LiJianghua XuLixin Zhang
    • C02F1/02C02F1/40
    • C10B33/00C02F1/22C02F1/40C02F2101/32C02F2301/066C10B39/06
    • The present invention falls within the field of purifying oil-laden wastewater, which provides a method for purifying coke-cooling wastewater in a delayed coking process in petroleum chemical field. The method comprises the following steps: (a) cooling the coke-cooling wastewater produced in a delayed coking process to 5-55° C. under 0.1-0.25 MPa absolute pressure, to obtain cooled coke-cooling wastewater; (b) subjecting the cooled coke-cooling wastewater to solid-liquid separation, to obtain a coke breeze phase and a liquid phase; (c) further separating the obtained liquid phase, to obtain an oil phase and a water phase; and (d) further discharging water from the obtained oil phase, to obtain the separated oil phase. The present invention also provides an equipment for carrying out the method. The method of the present invention has the following advantages: low cost for the equipment, good effect for treating coke-cooling wastewater, effectively preventing sulfur pollution and foul odor pollution, saving resources and improving the overall utility of the resources, and improving the cool coking efficiency.
    • 本发明属于净化含油废水领域,提供了石油化工领域延迟焦化工艺中焦化冷却废水的净化方法。 该方法包括以下步骤:(a)在0.1-0.25MPa绝对压力下将延迟焦化工艺中生产的焦炭冷却废水冷却至5-55℃,得到冷却焦炭冷却废水; (b)将冷却的焦炭冷却废水进行固液分离,得到焦炭微相和液相; (c)进一步分离得到的液相,得到油相和水相; 和(d)从得到的油相中进一步排出水,得到分离油相。 本发明还提供了一种用于执行该方法的设备。 本发明的方法具有以下优点:设备成本低,处理焦化废水效果好,有效防止硫污染,臭臭污染,节约资源,提高资源整体效用,提高冷却效果 焦化效率。
    • 3. 发明授权
    • Method and device for determining forwarding rule for data packet
    • 确定数据包转发规则的方法和装置
    • US09197550B2
    • 2015-11-24
    • US13513959
    • 2009-12-17
    • Lixin ZhangDuan ChenLijun Chen
    • Lixin ZhangDuan ChenLijun Chen
    • H04L12/28H04L12/723H04L12/46H04L12/721
    • H04L45/50H04L12/4625H04L12/4641H04L45/66H04L45/68
    • A method and corresponding device for determining forwarding rule for data packet in Virtual Private LAN Service with Provider Backbone Bridge (PBB-VPLS) network are disclosed. In the method, a value in a backbone service instance identifier (I-SID) field of the received data packet is firstly examined, then a virtual split horizon group corresponding to the data packets is determined based on the I-SID value, wherein the virtual split horizon group defines a forwarding rule for the data packets between different pseudo wire ports of the PBB-VPLS network. With the dynamic split horizon group, the method dynamically adapts to different forwarding rules for multiple I-VPLS instances with different tree topologies, and is capable of supporting multiple I-VPLS instances with different root sites and tree topologies in one B-VPLS instance, thereby ensuring the stability of the backbone network and reducing the network operation cost.
    • 公开了一种用于确定具有提供商骨干桥(PBB-VPLS)网络的虚拟专用LAN服务中的数据分组的转发规则的方法和相应设备。 在该方法中,首先检查接收到的数据分组的骨干服务实例标识符(I-SID)字段中的值,然后基于I-SID值确定与数据分组对应的虚拟水平分割组,其中, 虚拟水平分割组为PBB-VPLS网络的不同伪线端口之间的数据包定义了转发规则。 利用动态水平分割组,该方法动态适应不同树拓扑的多个I-VPLS实例的不同转发规则,并且能够在一个B-VPLS实例中支持具有不同根站点和树形拓扑的多个I-VPLS实例, 从而确保骨干网的稳定性,降低网络运营成本。
    • 8. 发明授权
    • Termination for superjunction VDMOSFET
    • 端接VDMOSFET
    • US08482064B2
    • 2013-07-09
    • US13493505
    • 2012-06-11
    • Yangbo YiHaisong LiQin WangPing TaoLixin Zhang
    • Yangbo YiHaisong LiQin WangPing TaoLixin Zhang
    • H01L29/78
    • H01L29/7811H01L29/0634H01L29/0653H01L29/0696
    • A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.
    • 硅超结VDMOSFET的终端包括也用作漏极区的重掺杂N型硅衬底; 漏极金属配置在重掺杂N型硅衬底的背表面上; 在重掺杂的N型硅衬底上设置N型硅外延层; 交替布置在N型硅外延层中形成P型硅柱和N型硅柱; 连续的氧化硅层设置在终端的硅表面的一部分上; 阻止移动离子漂移的结构(间隔布置的几个不连续的氧化硅层)设置在终端的硅表面的另一部分上。 阻止设置在终端区域中的移动离子的漂移的结构能够有效地防止移动离子的移动,并提高功率器件抵抗由移动离子引起的污染的能力。
    • 9. 发明授权
    • Techniques for dynamically sharing a fabric to facilitate off-chip communication for multiple on-chip units
    • 用于动态共享结构以促进多个片上单元的片外通信的技术
    • US08346988B2
    • 2013-01-01
    • US12786716
    • 2010-05-25
    • Jian LiWilliam E. SpeightLixin Zhang
    • Jian LiWilliam E. SpeightLixin Zhang
    • G06F3/00G06F13/00
    • G06F1/3203G06F1/3253G06F9/5011Y02D10/151Y02D10/22
    • A technique for sharing a fabric to facilitate off-chip communication for on-chip units includes dynamically assigning a first unit that implements a first communication protocol to a first portion of the fabric when private fabrics are indicated for the on-chip units. The technique also includes dynamically assigning a second unit that implements a second communication protocol to a second portion of the fabric when the private fabrics are indicated for the on-chip units. In this case, the first and second units are integrated in a same chip and the first and second protocols are different. The technique further includes dynamically assigning, based on off-chip traffic requirements of the first and second units, the first unit or the second unit to the first and second portions of the fabric when the private fabrics are not indicated for the on-chip units.
    • 一种用于共享一个结构以促进片上单元的片外通信的技术包括:当针对片上单元指示专用结构时,动态分配实现第一通信协议的第一单元到该结构的第一部分。 该技术还包括当为片上单元指示专用结构时,动态地将实现第二通信协议的第二单元分配给该结构的第二部分。 在这种情况下,第一和第二单元集成在相同的芯片中,并且第一和第二协议是不同的。 该技术还包括:当私有结构未被指示用于片上单元时,基于第一单元或第二单元的片外流量要求将第一单元或第二单元动态地分配给该结构的第一和第二部分 。