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    • 3. 发明申请
    • Fly-wing rotating lens eyeglasses
    • 飞翼旋转镜头眼镜
    • US20080239234A1
    • 2008-10-02
    • US12151938
    • 2008-05-10
    • Chang Yu
    • Chang Yu
    • G02C5/00
    • G02C5/08G02C1/04
    • A spectacle frame and lens arrangement whereby each lens rotates up and out of the field of vision by pivoting about a central pivot mechanism in the frame which keeps the lenses within the same plane both in the park and use positions. This differs from traditional flip-up spectacles that operate by causing the lens to fold up and forward from the user's eyes or outward to each side. This is accomplished by a simple squeeze of the frame and lower edge of a single lens between the forefinger and thumb of one hand.
    • 眼镜框架和透镜布置,其中每个透镜通过围绕框架中的中心枢转机构枢转而向上和向外旋转,其将透镜保持在公园和使用位置内的同一平面内。 这不同于传统的俯视眼镜,其通过使镜片从用户的眼睛向外折叠或向外折叠到每一侧而进行操作。 这是通过简单地挤压一只手的食指和拇指之间的单个镜片的框架和下边缘来实现的。
    • 4. 发明申请
    • Paper trimmer having safety locking device
    • 具有安全锁定装置的剪纸机
    • US20050087053A1
    • 2005-04-28
    • US10693512
    • 2003-10-22
    • Chang Yu
    • Chang Yu
    • B26D1/30B26D7/22B26D5/08
    • B26D7/22B26D1/30Y10T83/8812
    • A paper trimmer includes a cutter blade attached to a base, a catch attached to the cutter blade and having an orifice, and a latch device having a pole selectively engageable into the orifice of the catch to lock the catch and the cutter blade to the base, and selectively disengageable from the orifice of the catch, to allow the catch to be disengaged from the latch device, and to allow the cutter blade to be opened relative to the base. The catch and the cutter blade may not be operated relative to the base when the pole of the latch device is engaged in the orifice of the base, to prevent the cutter blade from being operated relative to the base by children inadvertently.
    • 纸张修剪器包括附接到基座的切割刀片,附接到切割刀片并具有孔口的卡爪以及具有可选择性地接合到卡扣的孔中的杆的闩锁装置,以将卡扣和刀片锁定到基座 并且可选择性地脱离卡扣的孔口,以允许卡扣从闩锁装置脱离,并允许刀片相对于底座打开。 当闩锁装置的杆接合在基座的孔口中时,卡扣和切割刀片可能不相对于基座操作,以防止切割刀片由于儿童无意中相对于基座而被操作。
    • 5. 发明授权
    • Bilayer barrier metal method for obtaining 100% step-coverage in contact
vias without junction degradation
    • 双层阻挡金属法,用于在没有结层退化的接触通孔中获得100%的阶梯覆盖
    • US5380678A
    • 1995-01-10
    • US667955
    • 1991-03-12
    • Chang YuTrung T. Doan
    • Chang YuTrung T. Doan
    • H01L21/768H01L21/441H01L21/324
    • H01L21/76843H01L21/76877
    • A process for forming an electrical connection in a semiconductor device between an aluminum interconnect and the substrate avoids junction spiking at temperatures (1000.degree. C.-1500.degree. C.) significantly above the standard semiconductor device fabrication temperatures (
    • 用于在铝互连和衬底之间的半导体器件中形成电连接的工艺避免了在标准半导体器件制造温度(<500℃)以下的温度(1000℃〜1500℃)的结尖峰。 在衬底的上表面上形成绝缘层,其中通孔通过绝缘层形成,以露出将要进行电连接的衬底的一部分。 在绝缘层和基板的暴露部分之上形成第一难熔金属阻挡层。 优选地,第一阻挡层是TiN。 在第一阻挡层上方形成第二难熔金属阻挡层以提供额外的厚度并且盖住第一阻挡层以使激光平坦化期间由于第一阻挡层引起的气体发射和增强的光学消融最小化,并且在 并在激光平面化后产生理想的表面形貌。 第二层优选为Ti。 在不破坏真空的情况下,在沉积第二阻挡层之后形成金属互连层。 金属互连层优选为铝或其合金。 铝层在互连金属的熔点之上在非常短的时间内退火以使铝平坦化并使铝流动以填充任何空隙。 铝和阻挡层被蚀刻以形成适当的互连图案。
    • 6. 发明授权
    • Semiconductor metallization method
    • 半导体金属化方法
    • US5147819A
    • 1992-09-15
    • US659866
    • 1991-02-21
    • Chang YuTrung T. DoanGurtej S. Sandhu
    • Chang YuTrung T. DoanGurtej S. Sandhu
    • H01L21/321H01L21/768
    • H01L21/321H01L21/7684H01L21/76882Y10S148/02Y10S148/093
    • A method of applying an alloy layer of predetermined thickness on a semiconductor wafer to fill contact openings having a defined diameter, the method comprising the following steps:chemical vapor depositing (CVD) a layer of elemental metal atop the wafer to a thickness of from 5% to 35% of the defined contact diameter;sputtering a layer of an alloy atop the chemical vapor deposited layer of elemental metal to a thickness which results in the combination of the chemical vapor deposited and sputtered layers having substantially the predetermined overall layer thickness; andcombining and intermixing the sputtered alloy layer with the chemical vapor deposited elemental metal layer to form an overall homogenous alloy layer by applying energy to the sputtered alloy layer, the application of energy also filling contact openings and planarizing the homogenous layer.Preferably, the CVD layer has a thickness of from 10% to 20%, and the energy is applied by a scanning pulsed laser.
    • 一种在半导体晶片上施加预定厚度的合金层以填充具有限定直径的接触开口的方法,该方法包括以下步骤:在晶片顶部化学气相沉积(CVD)一层元素金属至5 定义的接触直径的百分之三十五; 在元素金属的化学气相沉积层的顶部溅射合金层,其厚度使得化学气相沉积和溅射层的组合具有基本上预定的总层厚度; 并将溅射的合金层与化学气相沉积的元素金属层组合和混合,以通过向溅射的合金层施加能量来形成整体均匀的合金层,施加能量也填充接触开口并使均匀层平坦化。 优选地,CVD层具有10%至20%的厚度,并且通过扫描脉冲激光施加能量。