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    • 1. 发明授权
    • Method for monitoring a semiconductor wafer in a chemical mechanical polishing process
    • 在化学机械抛光工艺中监测半导体晶片的方法
    • US06580508B1
    • 2003-06-17
    • US09449533
    • 1999-11-29
    • Hsueh-Chung ChenChien-Hung ChenJuan-Yuan Wu
    • Hsueh-Chung ChenChien-Hung ChenJuan-Yuan Wu
    • G01N2155
    • B24B37/013B24B49/04B24B49/12
    • The present invention provides a monitoring method for monitoring a semiconductor wafer, in a chemical mechanical polishing (CMP) process. The CMP process is used to polish a dielectric layer of the semiconductor. The monitoring method comprises: 1. exposing the dielectric layer of the semiconductor wafer to an input light beam of fixed wavelength at a predetermined angle to generate a reflected light beam within a predetermined time period after performing the CMP process, the intensity of the reflected light beam undergoing periodic changes in response to the gradual thinning of the dielectric layer during the CMP process, 2. monitoring the intensity of the reflected light beam at a starting period within the predetermined time period and obtaining a periodic change rule according to the periodic changes of the intensity of the reflected light beam, and 3. monitoring the intensity of the reflected light beam throughout the rest of the predetermined time period and generating an output signal to stop the CMP process if the change of the intensity of the reflected light beam is not in accordance with the periodic change rule.
    • 本发明提供了一种用于在化学机械抛光(CMP)工艺中监测半导体晶片的监控方法。 CMP工艺用于抛光半导体的电介质层。 监视方法包括:1.将半导体晶片的电介质层以预定角度曝光到固定波长的输入光束,以在执行CMP处理之后的预定时间段内产生反射光束,反射光的强度 在CMP工艺期间响应于电介质层逐渐变薄的光束经历周期性变化,2.在预定时间段内在起始时段监测反射光束的强度,并根据周期性变化规律获得周期性变化规律 反射光束的强度,以及3.在预定时间段的其余时间内监测反射光束的强度,并且如果反射光束的强度的变化不是,则产生输出信号以停止CMP处理 按照定期变更规则。
    • 2. 发明授权
    • Exhaust line of chemical-mechanical polisher
    • 化学机械抛光机排气管
    • US06139680A
    • 2000-10-31
    • US212371
    • 1998-12-15
    • Chien-Hung ChenHsueh-Chung Chen
    • Chien-Hung ChenHsueh-Chung Chen
    • B01D46/00B24B37/04B24B55/12C23F1/02
    • B24B55/12B01D46/00B24B37/04
    • An improved exhaust line of a chemical-mechanical polisher will improve polishing performance. A chemical-mechanical polisher is in a polishing chamber, wherein the chemical-mechanical polisher contains a polishing table, a plurality of polishing pads on the polishing table, and a plurality of outlets on the polishing table. A plurality of exhaust lines is connected with the plurality of the outlets, wherein the exhaust lines are used to drive out exhaust gas and sewage generated in the polishing chamber. At least a gas-liquid separating device is connected with the plurality of the exhaust lines, wherein the gas-liquid separating device is used for separation of the exhaust and the sewage. The gas-liquid separating device comprises a sewage collector, a filter, a pump, and a sewage-collecting device. The sewage collector is connected with the plurality of the outlets, wherein the sewage collector is used for collecting the exhaust gas and the sewage driven out through the plurality of outlets. The filter is connected with the top of the gas-liquid separating device. The pump is connected with the filter. The sewage-collecting device is connected with the bottom of the gas-liquid separating device, wherein the sewage-collecting device is used for collecting the sewage.
    • 化学机械抛光机的改进的排气管线将提高抛光性能。 化学机械抛光机在抛光室中,其中化学机械抛光机包含抛光台,抛光台上的多个抛光垫和抛光台上的多个出口。 多个排气管路与多个出口连接,其中排气管线用于驱除在抛光室中产生的废气和污水。 至少一个气液分离装置与多个排气管连接,其中气液分离装置用于分离废气和污水。 气液分离装置包括污水收集器,过滤器,泵和污水收集装置。 污水收集器与多个出口连接,其中污水收集器用于收集废气,并通过多个出口排出污水。 过滤器与气液分离装置的顶部连接。 泵与过滤器连接。 污水收集装置与气液分离装置的底部连接,其中污水收集装置用于收集污水。
    • 3. 发明授权
    • Method for fabricating a shallow trench isolation structure
    • 浅沟槽隔离结构的制造方法
    • US06303461B1
    • 2001-10-16
    • US09221203
    • 1998-12-23
    • Hsueh-Chung ChenChien-Hung Chen
    • Hsueh-Chung ChenChien-Hung Chen
    • H01L2176
    • H01L21/76229
    • A method for fabricating a shallow trench isolation (STI) structure is provided. The method contain sequentially forming a pad oxide layer, a hard layer, and a polysilicon layer on the substrate, all of which are patterned to form a trench in the substrate to define several active areas. The hard layer usually includes silicon nitride. An insulating layer is formed over the substrate so that the trench is also filled. A CMP process is performed to polish the insulating layer. The CMP process is continuously performed until the hard layer is completely exposed. The hard layer and the pad oxide layer are sequentially removed to form the STI structure.
    • 提供了一种制造浅沟槽隔离(STI)结构的方法。 该方法包括在衬底上顺序地形成衬垫氧化物层,硬质层和多晶硅层,所有这些都被图案化以在衬底中形成沟槽以限定若干有效区域。 硬层通常包括氮化硅。 在衬底上形成绝缘层,使得沟槽也被填充。 执行CMP工艺以抛光绝缘层。 连续进行CMP工艺,直到硬质层完全暴露。 顺序地除去硬质层和焊盘氧化物层以形成STI结构。
    • 4. 发明授权
    • Method of fabricating shallow trench isolation
    • 浅沟槽隔离的制作方法
    • US06238997B1
    • 2001-05-29
    • US09237162
    • 1999-01-25
    • Hsueh-Chung ChenChien-Hung Chen
    • Hsueh-Chung ChenChien-Hung Chen
    • H01L2176
    • H01L21/76229
    • A method of fabricating a shallow trench isolation. A pad oxide layer, a mask layer, an oxide layer, and a polysilicon layer are formed over a substrate. A trench is formed in order to define active regions of the substrate. An oxide layer is filled in the trenches. There is a high etching selectivity for etching the oxide layer and the polysilicon layer. Thus, the polysilicon layer can be used as an etching stop layer. The polishing etching rates of the polysilicon layer and the silicon oxide layer are close during a chemical-mechanical polishing process. In this manner, a smooth surface over the active regions can be formed. Polishing and etching processes are performed in order to form a shallow trench isolation.
    • 制造浅沟槽隔离的方法。 在衬底上形成衬垫氧化物层,掩模层,氧化物层和多晶硅层。 形成沟槽以便限定衬底的有源区。 氧化层填充在沟槽中。 蚀刻氧化物层和多晶硅层的蚀刻选择性高。 因此,多晶硅层可以用作蚀刻停止层。 在化学机械抛光过程中,多晶硅层和氧化硅层的抛光蚀刻速率接近。 以这种方式,可以形成活性区域上的平滑表面。 进行抛光和蚀刻工艺以形成浅沟槽隔离。
    • 8. 发明授权
    • Signal controlling method for 3D image display device
    • 3D图像显示装置的信号控制方法
    • US08848115B2
    • 2014-09-30
    • US12954869
    • 2010-11-27
    • Shih-Chieh LinHsiang-Tan LinChien-Hung ChenChun-Chieh Chiu
    • Shih-Chieh LinHsiang-Tan LinChien-Hung ChenChun-Chieh Chiu
    • G02F1/1335H04N13/02G02B27/26H04N13/04
    • G02B27/26H04N13/337
    • The present invention provides a 3D image signal controlling method. The method comprises inputting a left eye image into the first liquid crystal layer, turning off the backlight module and switching gray levels of the second liquid crystal layer to a minimum gray level during (4N−3)th time interval, wherein N is natural number; stopping inputting the left eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the minimum gray level during (4N−2)th time interval; inputting a right eye image into the first liquid crystal layer, turning off the backlight module and switching the gray levels of the second liquid crystal layer as a maximum gray level during (4N−1)th time interval; and stopping inputting the right eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the maximum gray level during (4N)th time interval.
    • 本发明提供一种3D图像信号控制方法。 该方法包括在(4N-3)时间间隔期间将左眼图像输入到第一液晶层中,关闭背光模块并将第二液晶层的灰度级切换到最小灰度级,其中N是自然数 ; 停止输入左眼图像,在(4N-2)时间间隔期间打开背光模块并保持第二液晶层的灰度级为最小灰度级; 在第(4N-1)次间隔期间,将右眼图像输入到第一液晶层中,关闭背光模块并将第二液晶层的灰度级切换为最大灰度级; 停止输入右眼图像,在(4N)时间间隔期间打开背光模块并保持第二液晶层的灰度级为最大灰度级。