专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06822993B2 Index guided vertical cavity surface emitting lasers 有权
标题翻译：索引引导垂直腔表面发射激光器
公开(公告)号：US06822993B2
公开(公告)日：2004-11-23
申请号：US10338137
申请日：2003-01-08
申请人： Hsing-Chung Lee , Liew-Chuang Chui
发明人： Hsing-Chung Lee , Liew-Chuang Chui
IPC分类号： H01S500
CPC分类号： H01S5/18316 , H01S5/18333 , H01S5/2063
摘要： Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.
摘要翻译：平面折射率引导垂直腔面发射激光器（PIG VCSEL）利用指数引导提供改进的光限制和质子注入，以改善电流限制。通过在光学限制区域周围蚀刻引导引导开口（孔或部分脊）来实现引导引导，并且可以通过改变引导引导开口（孔和部分脊）的蚀刻体积来调整引导引导。在PIG VCSEL中，顶部接触表面积增加，从而降低接触和器件电阻，从而进一步提高VCSEL性能。 PIG VCSEL是一种基本上平面化的器件，易于制造。

2. 发明授权

US06852558B2 Methods for forming index guided vertical cavity surface emitting lasers 有权
标题翻译：用于形成折射率引导的垂直腔表面发射激光器的方法
公开(公告)号：US06852558B2
公开(公告)日：2005-02-08
申请号：US10339057
申请日：2003-01-07
申请人： Hsing-Chung Lee , Liew-Chuang Chui
发明人： Hsing-Chung Lee , Liew-Chuang Chui
IPC分类号： H01S5/183 , H01S5/20 , H01L21/00
CPC分类号： H01S5/18316 , H01S5/18333 , H01S5/2063
摘要： Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.
摘要翻译：平面折射率引导垂直腔面发射激光器（PIG VCSEL）利用指数引导提供改进的光限制和质子注入，以改善电流限制。通过在光学限制区域周围蚀刻引导引导开口（孔或部分脊）来实现引导引导，并且可以通过改变引导引导开口（孔和部分脊）的蚀刻体积来调整引导引导。在PIG VCSEL中，顶部接触表面积增加，从而降低接触和器件电阻，从而进一步提高VCSEL性能。 PIG VCSEL是一种基本上平面化的器件，易于制造。

3. 发明授权

US06577658B1 Method and apparatus for planar index guided vertical cavity surface emitting lasers 有权
标题翻译：用于平面折射率引导的垂直腔表面发射激光器的方法和装置
公开(公告)号：US06577658B1
公开(公告)日：2003-06-10
申请号：US09400359
申请日：1999-09-20
申请人： Hsing-Chung Lee , Liew-Chuang Chui
发明人： Hsing-Chung Lee , Liew-Chuang Chui
IPC分类号： H01S500
CPC分类号： H01S5/18316 , H01S5/18333 , H01S5/2063
摘要： Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.
摘要翻译：平面折射率引导垂直腔面发射激光器（PIG VCSEL）利用指数引导提供改进的光限制和质子注入，以改善电流限制。通过在光学限制区域周围蚀刻引导引导开口（孔或部分脊）来实现引导引导，并且可以通过改变引导引导开口（孔和部分脊）的蚀刻体积来调整引导引导。在PIG VCSEL中，顶部接触表面积增加，从而降低接触和器件电阻，从而进一步提高VCSEL性能。 PIG VCSEL是一种基本上平面化的器件，易于制造。

4. 发明申请

US20110062431A1 LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 有权
标题翻译：金属氧化物半导体在温度敏感基板上的激光退火
公开(公告)号：US20110062431A1
公开(公告)日：2011-03-17
申请号：US12874145
申请日：2010-09-01
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层氧化物半导体材料和界面。该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

5. 发明申请

US20100309940A1 HIGH POWER LASER PACKAGE WITH VAPOR CHAMBER 审中-公开
标题翻译：高功率激光包装与蒸汽室
公开(公告)号：US20100309940A1
公开(公告)日：2010-12-09
申请号：US12478190
申请日：2009-06-04
申请人： Hsing-Chung Lee
发明人： Hsing-Chung Lee
IPC分类号： H01S3/04 , F28D15/04 , F28F7/00 , H05K7/20
CPC分类号： H01S5/02469 , F28D15/0233 , H01S5/0224 , H01S5/02248 , H01S5/02284 , H01S5/02492 , H01S5/4031
摘要： A heat spreader structure includes a high power laser with an epi side and an emitting facet. A vapor chamber includes a housing defining an inner vapor cavity and a wick positioned in the vapor cavity to define an evaporation area on one side of the cavity, a condensation area on an opposite side of the cavity, and fluid communication between the condensation area and the evaporation area. A space defined between the evaporation area and the condensation area. The wick includes a porous powder sintered to inner surfaces of the sealed cavity to hold the porous powder in position. The epi side of the laser is coupled to the one side of the vapor chamber and heat removal mechanism is coupled to the opposite side of the cavity.
摘要翻译：散热器结构包括具有外延面和发射面的高功率激光器。蒸气室包括限定内部蒸汽空腔的壳体和位于蒸气空腔中的芯，以在空腔的一侧上限定蒸发区域，在空腔的相对侧上的冷凝区域和冷凝区域与冷凝区域之间的流体连通蒸发面积。在蒸发区域和冷凝区域之间限定的空间。芯包括烧结到密封腔的内表面的多孔粉末以将多孔粉末保持在适当位置。激光器的外表面耦合到蒸气室的一侧，并且散热机构联接到空腔的相对侧。

6. 发明申请

US20080169464A1 Metal-insulator- metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：US20080169464A1
公开(公告)日：2008-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L51/52 , G02F1/135 , H01L51/56
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

7. 发明授权

US06580741B2 Systems with integrated optically pumped vertical cavity surface emitting lasers 失效
标题翻译：具有集成光泵浦垂直腔表面发射激光器的系统
公开(公告)号：US06580741B2
公开(公告)日：2003-06-17
申请号：US10175338
申请日：2002-06-18
申请人： Wenbin Jiang , Hsing-Chung Lee , Yong Cheng
发明人： Wenbin Jiang , Hsing-Chung Lee , Yong Cheng
IPC分类号： H01S500
CPC分类号： H01S5/041 , H01S5/0215 , H01S5/0216 , H01S5/026 , H01S5/0265 , H01S5/0608 , H01S5/06216 , H01S5/06226 , H01S5/1085 , H01S5/18 , H01S5/18311
摘要： An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.
摘要翻译：通过将电泵浦的平面内半导体激光器和垂直腔表面发射激光器与形成有平面内半导体激光器的光束操纵元件一体化而形成集成的光泵浦垂直腔表面发射激光器（VCSEL）。面内半导体激光器可以是许多不同类型的平面内激光器，包括边缘发射激光器，面内表面发射激光器或折叠空腔表面发射激光器。平面内半导体激光器对VCSEL进行光泵浦使其发光。面内半导体激光器被设计成发射相对较短波长的光子，而VCSEL被设计成发射相对较长波长的光子。面内半导体激光器和VCSEL可以以多种方式耦合在一起，包括原子接合，晶片接合，金属接合，环氧胶或其他众所周知的半导体接合技术。光束操纵元件可以是光栅或镜面。

8. 发明授权

US5886464A Organic electroluminescent device with emission from hole transporting layer 失效
标题翻译：具有从空穴传输层发射的有机电致发光器件
公开(公告)号：US5886464A
公开(公告)日：1999-03-23
申请号：US844506
申请日：1997-04-18
申请人： Song Q. Shi , Hsing-Chung Lee , Thomas B. Harvey, III , Franky So
发明人： Song Q. Shi , Hsing-Chung Lee , Thomas B. Harvey, III , Franky So
IPC分类号： C09K11/06 , H01L51/50 , H05B33/14 , H01J1/62 , B05D5/06 , B05D5/12 , H01J63/04
CPC分类号： H05B33/14 , H01L51/5012 , H01L2251/552
摘要： An organic EL device comprises a cathode, an electron transporting layer (ETL), a hole transporting layer (HTL) and an anode which are laminated in sequence, wherein the materials making up the ETL and HTL are so selected that the energy barrier for hole injection from the HTL to the ETL is substantially higher than the energy barrier for electron injection from the ETL to the HTL. The organic EL device obtained has efficient light emission from the HTL layer when an efficient fluorescent dye as an emitter is doped in the HTL or the part of the HTL close to the ETL/HTL interface.
摘要翻译：有机EL器件包括依次层叠的阴极，电子传输层（ETL），空穴传输层（HTL）和阳极，其中构成ETL和HTL的材料被选择成使得孔的能量势垒从HTL到ETL的注入显着高于从ETL到HTL的电子注入的能量势垒。当在HTL或HTL接口附近的部分HTL中掺杂有效荧光染料作为发射体时，所获得的有机EL器件具有来自HTL层的高效发光。

9. 发明授权

US5780321A LED display packaging with substrate removal and method of fabrication 失效
标题翻译： LED显示包装与基板去除及其制造方法
公开(公告)号：US5780321A
公开(公告)日：1998-07-14
申请号：US699263
申请日：1996-08-19
申请人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
发明人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
IPC分类号： H01L21/60 , G09F9/33 , H01L25/16 , H01L27/15 , H01L33/00 , H01L21/00
CPC分类号： H01L27/156 , H01L25/162 , H01L25/167 , H01L2924/0002
摘要： A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
摘要翻译：一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管（LED）显示器封装的方法，所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘，具有连接到最上表面的连接焊盘的单独的硅驱动器装置，其被定位成在正确地注册时协同地与LED器件的那些耦合，使用标准C5 DCA将LED装置倒装芯片凸块结合到驱动器装置，底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物（InGaAlP）外延层发射。

10. 发明授权

US5668438A Organic electroluminescent device with emission from hole transporting layer 失效
标题翻译：具有从空穴传输层发射的有机电致发光器件
公开(公告)号：US5668438A
公开(公告)日：1997-09-16
申请号：US660014
申请日：1996-06-06
申请人： Song Q. Shi , Hsing-Chung Lee , Thomas B. Harvey, III , Franky So
发明人： Song Q. Shi , Hsing-Chung Lee , Thomas B. Harvey, III , Franky So
IPC分类号： C09K11/06 , H01L51/50 , H05B33/14 , H01J1/62 , H01J63/04
CPC分类号： H05B33/14 , H01L51/5012 , H01L2251/552
摘要： An organic EL device comprises a cathode, an electron transporting layer (ETL), a hole transporting layer (HTL) and an anode which are laminated in sequence, wherein the materials making up the ETL and HTL are so selected that the energy barrier for hole injection from the HTL to the ETL is substantially higher than the energy barrier for electron injection from the ETL to the HTL. The organic EL device obtained has efficient light emission from the HTL layer when an efficient fluorescent dye as an emitter is doped in the HTL or the part of the HTL close to the ETL/HTL interface.
摘要翻译：有机EL器件包括依次层叠的阴极，电子传输层（ETL），空穴传输层（HTL）和阳极，其中构成ETL和HTL的材料被选择成使得孔的能量势垒从HTL到ETL的注入显着高于从ETL到HTL的电子注入的能量势垒。当在HTL或HTL接口附近的部分HTL中掺杂有效荧光染料作为发射体时，所获得的有机EL器件具有来自HTL层的高效发光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式