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    • 5. 发明授权
    • Pressure detector and pressure detector array
    • 压力检测器和压力检测器阵列
    • US08258554B2
    • 2012-09-04
    • US12785998
    • 2010-05-24
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • H01L29/84
    • G01L1/005H01L51/057
    • A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
    • 公开了一种具有有机晶体管,压力检测层和第一电极的压力检测器。 有机晶体管包括发射极,有机层,形成有孔的栅极和集电极,有机层夹在发射极和集电极之间。 压力检测层形成在有机晶体管上,使得集电体夹在有机层和压力检测层之间。 第一电极形成在压力检测层上,使得压力检测层夹在集电体和第一电极之间。 压力检测器的有源区域的面积由电极的重叠面积确定,从而减小电极的间距,从而减小压力检测器的尺寸。
    • 6. 发明申请
    • Passive matrix organic light emitting diode display device
    • 无源矩阵有机发光二极管显示装置
    • US20090230383A1
    • 2009-09-17
    • US12153233
    • 2008-05-15
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • H01L51/52
    • H01L27/3288H01L51/057H01L51/5203
    • A passive matrix organic light emitting diode display device comprises a plurality of vertical organic light emitting transistors, each having a first collector, a first grid/base, and a first emitter. Therein, the first collectors are electrically connected and arranged parallelly to form a plurality of first scan units, and the first grids/bases are electrically connected and arranged parallelly to form a plurality of second scan units, while the first emitters are integrated into a common electrode, in which the first scan units and the second scan units are perpendicularly crossed. By perpendicularly combining vertical transistors onto organic light emitting diodes so as to drive the organic light emitting diodes, an active area as well as a luminance of the organic light emitting diode display device are enhanced and consequently an aperture ratio of each pixel unit in the organic light emitting diode display device is increased.
    • 无源矩阵有机发光二极管显示装置包括多个垂直有机发光晶体管,每个具有第一集电极,第一栅极/基极和第一发射极。 其中,第一收集器被电连接并且平行布置以形成多个第一扫描单元,并且第一栅极/底座被电连接并平行布置以形成多个第二扫描单元,而第一发射器被集成到共同的 电极,其中第一扫描单元和第二扫描单元垂直交叉。 通过将垂直晶体管垂直组合到有机发光二极管上以驱动有机发光二极管,有机发光二极管显示装置的有源面积和亮度得到增强,因此有机发光二极管显示装置中的每个像素单元的开口率 发光二极管显示装置增加。
    • 7. 发明申请
    • VERTICAL ORGANIC TRANSISTOR
    • 垂直有机晶体管
    • US20090181513A1
    • 2009-07-16
    • US12389580
    • 2009-02-20
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • H01L21/331
    • H01L51/0504H01L51/0036H01L51/0037H01L51/057
    • A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
    • 提供一种垂直有机晶体管及其制造方法,其中发射极,具有开口的栅极和集电极依次布置在基板的上方。 两个有机半导体层分别介于发射极和栅极之间,并具有开口,栅格与开口和集电极之间。 通道长度简单地由有机半导体层的厚度决定。 集电极电流取决于发射极和电网开口之间的电位差所贡献的空间电荷限制电流。 并且电网电压因此可以有效地控制集电极电流。 此外,本发明的垂直有机晶体管的制造工艺简单并且不会使用光刻工艺。
    • 10. 发明申请
    • PRESSURE DETECTOR AND PRESSURE DETECTOR ARRAY
    • 压力检测器和压力检测器阵列
    • US20110108936A1
    • 2011-05-12
    • US12785998
    • 2010-05-24
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • H01L29/84
    • G01L1/005H01L51/057
    • A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
    • 公开了一种具有有机晶体管,压力检测层和第一电极的压力检测器。 有机晶体管包括发射极,有机层,形成有孔的栅极和集电极,有机层夹在发射极和集电极之间。 压力检测层形成在有机晶体管上,使得集电体夹在有机层和压力检测层之间。 第一电极形成在压力检测层上,使得压力检测层夹在集电体和第一电极之间。 压力检测器的有源区域的面积由电极的重叠面积确定,从而减小电极的间距,从而减小压力检测器的尺寸。