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1. 发明授权

US08704614B2 Cavity filter having surge suppress means 失效
标题翻译：具有浪涌抑制装置的腔室滤波器
公开(公告)号：US08704614B2
公开(公告)日：2014-04-22
申请号：US13115702
申请日：2011-05-25
申请人： Hsien-Wen Liu , Chien-Chih Lee , Chin-Hsuan Tsai , Shang-Yu Yang
发明人： Hsien-Wen Liu , Chien-Chih Lee , Chin-Hsuan Tsai , Shang-Yu Yang
IPC分类号： H01P1/213 , H01P1/208 , H01P1/162
CPC分类号： H01P1/2138 , H01P1/30
摘要： A cavity filter includes a base member defining therein a resonant chamber, an antenna port disposed at the center of the resonant chamber, two signal input/output ports respectively disposed at two distal ends of the resonant chamber for signal input/output, a cover member covering the base member, two feedback channels disposed in the base member at two opposite lateral sides relative to the resonant chamber and respectively connected between the signal ports and the antenna port, and wave-absorbing components respectively mounted in the feedback channels for removing surge waves from feedback frequency components in the feedback channels.
摘要翻译：空腔滤波器包括：在其中限定谐振室的基座构件，设置在谐振室中心的天线端口，分别设置在用于信号输入/输出的谐振室的两个远端处的两个信号输入/输出端口，盖构件覆盖基部构件，两个相对于谐振室的两个相对的横向侧设置在基座构件中并且分别连接在信号端口和天线端口之间的反馈通道，以及分别安装在反馈通道中用于去除浪涌波的波浪吸收组件来自反馈信号中的反馈频率分量。

2. 发明授权

US08710941B2 High-order harmonic device of cavity filter 失效
标题翻译：谐波滤波器的高次谐波器件
公开(公告)号：US08710941B2
公开(公告)日：2014-04-29
申请号：US13020444
申请日：2011-02-03
申请人： Chien-Chih Lee , Wei-Chin Hsu , Hsien-Wen Liu
发明人： Chien-Chih Lee , Wei-Chin Hsu , Hsien-Wen Liu
IPC分类号： H01P1/205 , H01P7/04
CPC分类号： H01P1/205 , H01P1/2053 , H01P7/04
摘要： A high-order harmonic device of a cavity filter including a base and a lid cover the base is disclosed. The base has a through groove connecting to an upper and a lower portion. The base has a plurality of output terminal with metallic conductor extending into the inner side formed on the surface of the sidewall. The base has resonance space formed indented to receive the metallic conductor and extending to connect to the through groove. The lid has a plurality of threading holes formed corresponding to chambers and partitions received with adjusting elements for height adjustment. The adjusting elements has the resonance bars corresponding to every chamber and the suppressing bars corresponding to every partition. By adjusting suppressing bar and the partition to a predetermined distance, the space of the channel for transmitting the high-order harmonic wave can be reduced to suppress noise produced by high-order harmonic wave.
摘要翻译：公开了一种包括基座和盖子覆盖基座的空腔滤波器的高次谐波装置。基部具有连接到上部和下部的通孔。基座具有多个输出端子，金属导体延伸到形成在侧壁表面上的内侧。底座具有形成为凹入的谐振空间，用于容纳金属导体并延伸以连接到通孔。所述盖具有多个对应于室和隔板形成的穿孔，所述隔间和隔板被接纳有用于高度调节的调节元件。调节元件具有对应于每个室的共振杆和对应于每个分区的抑制棒。通过将抑制棒和隔板调节到预定距离，可以减少用于发送高次谐波的通道的空间，以抑制由高次谐波产生的噪声。

3. 发明授权

US08575612B2 Pixel structure 有权
标题翻译：像素结构
公开(公告)号：US08575612B2
公开(公告)日：2013-11-05
申请号：US13461798
申请日：2012-05-02
申请人： Chien-Chih Lee , Pei-Yi Shen , Ching-Yang Cheng , Shu-Ming Huang
发明人： Chien-Chih Lee , Pei-Yi Shen , Ching-Yang Cheng , Shu-Ming Huang
IPC分类号： H01L29/04
CPC分类号： H01L27/1259 , G02F1/136213 , G02F1/136227 , H01L27/1255 , H01L28/40
摘要： The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
摘要翻译：本发明提供一种像素结构，包括基板，设置在基板上的图案化电极，设置在图案化电极上的第一绝缘层，设置在第一绝缘层上的公共电极，设置在公共电极上的第二绝缘层，以及设置在第二绝缘层上的漏极。第一绝缘层具有第一通孔，第二绝缘层具有第二通孔。漏极包括经由第一通孔和第二通孔与图案化电极电连接的第一部分和延伸到公共电极上的第二部分。公共电极与图案化电极耦合以形成第一存储电容器，并与第二部分耦合以形成第二存储电容器。

4. 发明授权

US06168905A Etching method for multi-level terraced structures 有权
标题翻译：多级梯田结构的蚀刻方法
公开(公告)号：US06168905A
公开(公告)日：2001-01-02
申请号：US09143114
申请日：1998-08-28
申请人： Chen-Kuei Chung , Chien-Chih Lee , Ching-Yi Wu
发明人： Chen-Kuei Chung , Chien-Chih Lee , Ching-Yi Wu
IPC分类号： G03C500
CPC分类号： G02B5/1857 , G03F7/001
摘要： An etching method for a semiconductor substrate to form a multi-level terraced structures is disclosed. A photomask is used to prepare a etching mask on a semiconductor substrate for a multi-level terraced structure. Said photomask has a pattern with a plurality of regions. Widths of the masked areas of the pattern are so designed that the etching rate of the etchant to respective parts of the substrate may be controlled, whereby a multi-level terraced structure with decided widths and heights of all levels may be prepared with one single photomask under one single etching step. This invention also discloses the photomask used in the etching method and products prepared according to the etching method.
摘要翻译：公开了一种用于形成多层次梯形结构的半导体衬底的蚀刻方法。使用光掩模来制备用于多层梯田结构的半导体衬底上的蚀刻掩模。所述光掩模具有具有多个区域的图案。图案的掩蔽区域的宽度被设计成可以控制蚀刻剂对基板的各个部分的蚀刻速率，由此可以用一个单个光掩模来制备具有所有等级的确定的宽度和高度的多层次的梯形结构在一个单一蚀刻步骤下。本发明还公开了蚀刻方法中使用的光掩模和根据蚀刻方法制备的产品。

5. 发明申请

US20130015449A1 PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：像素结构及其制作方法
公开(公告)号：US20130015449A1
公开(公告)日：2013-01-17
申请号：US13461798
申请日：2012-05-02
申请人： Chien-Chih Lee , Pei-Yi Shen , Ching-Yang Cheng , Shu-Ming Huang
发明人： Chien-Chih Lee , Pei-Yi Shen , Ching-Yang Cheng , Shu-Ming Huang
IPC分类号： H01L33/08 , H01L33/36
CPC分类号： H01L27/1259 , G02F1/136213 , G02F1/136227 , H01L27/1255 , H01L28/40
摘要： The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
摘要翻译：本发明提供一种像素结构，包括基板，设置在基板上的图案化电极，设置在图案化电极上的第一绝缘层，设置在第一绝缘层上的公共电极，设置在公共电极上的第二绝缘层，以及设置在第二绝缘层上的漏极。第一绝缘层具有第一通孔，第二绝缘层具有第二通孔。漏极包括经由第一通孔和第二通孔与图案化电极电连接的第一部分和延伸到公共电极上的第二部分。公共电极与图案化电极耦合以形成第一存储电容器，并与第二部分耦合以形成第二存储电容器。

6. 发明授权

US09515387B2 Multi-input multi-output antenna with electromagnetic band-gap structure 有权
标题翻译：具有电磁带隙结构的多输入多输出天线
公开(公告)号：US09515387B2
公开(公告)日：2016-12-06
申请号：US13588496
申请日：2012-08-17
申请人： Kuo-Fong Hung , Ho-Chung Chen , Mao-Lin Wu , Chien-Chih Lee
发明人： Kuo-Fong Hung , Ho-Chung Chen , Mao-Lin Wu , Chien-Chih Lee
IPC分类号： H01Q21/28 , H01Q15/00 , H01Q1/52
CPC分类号： H01Q15/006 , H01Q1/521 , H01Q21/28
摘要： A MIMO (Multi-Input Multi-Output) antenna includes a system ground plane, an antenna ground plane, an EBG (Electromagnetic Band-Gap) structure, a first antenna element, and a second antenna element. The antenna ground plane overlaps a first portion of the system ground plane. The EBG structure is formed on a second portion of the system ground plane. The first antenna element and the second antenna element are both disposed in proximity to the EBG structure, but substantially extend in different directions.
摘要翻译： MIMO（多输入多输出）天线包括系统接地平面，天线接地平面，EBG（电磁带隙）结构，第一天线元件和第二天线元件。天线接地平面与系统接地层的第一部分重叠。 EBG结构形成在系统接地层的第二部分上。第一天线元件和第二天线元件均设置在EBG结构附近，但基本上在不同的方向上延伸。

7. 发明授权

US08704613B2 Cavity filter having feedback arrangement 失效
标题翻译：腔体滤波器具有反馈装置
公开(公告)号：US08704613B2
公开(公告)日：2014-04-22
申请号：US13115643
申请日：2011-05-25
申请人： Wei-Hong Hsu , Chien-Chih Lee , Jhih-Wei Wang , Wei-Chin Hsu
发明人： Wei-Hong Hsu , Chien-Chih Lee , Jhih-Wei Wang , Wei-Chin Hsu
IPC分类号： H01P1/213 , H01P1/208 , H01P7/06
CPC分类号： H01P1/213 , H01P1/208 , H01P1/2138 , H01P7/06
摘要： A cavity filter having two series of resonance chambers bilaterally connected between an antenna port and two opposing signal input/output ports, each series of resonance chambers having the last resonance chamber thereof connected to the antenna port and the first resonance chamber thereof connected between the respective signal input/output port and the associating last resonance chamber to perform cross-coupling feedback, improving the quality of the signal received by the signal receiver using the cavity filter and enhancing signal transmission performance.
摘要翻译：一种空腔滤波器，具有两个在天线端口和两个相对的信号输入/输出端口之间双向连接的共振室系列，每一系列共振室具有连接到天线端口的最后一个共振腔室，并且第一谐振腔室连接在相应的信号输入/ 信号输入/输出端口和关联的最后一个共振室进行交叉耦合反馈，提高信号接收机使用腔体滤波器接收的信号的质量，并增强信号传输性能。

8. 发明申请

US20120299667A1 CAVITY FILTER HAVING FEEDBACK ARRANGEMENT 失效
标题翻译：具有反馈装置的空气过滤器
公开(公告)号：US20120299667A1
公开(公告)日：2012-11-29
申请号：US13115643
申请日：2011-05-25
申请人： Wei-Hong HSU , Chien-Chih Lee , Jhih-Wei Wang , Wei-Chin Hsu
发明人： Wei-Hong HSU , Chien-Chih Lee , Jhih-Wei Wang , Wei-Chin Hsu
IPC分类号： H01P1/207
CPC分类号： H01P1/213 , H01P1/208 , H01P1/2138 , H01P7/06
摘要： A cavity filter having two series of resonance chambers bilaterally connected between an antenna port and two opposing signal input/output ports, each series of resonance chambers having the last resonance chamber thereof connected to the antenna port and the first resonance chamber thereof connected between the respective signal input/output port and the associating last resonance chamber to perform cross-coupling feedback, improving the quality of the signal received by the signal receiver using the cavity filter and enhancing signal transmission performance.
摘要翻译：一种空腔滤波器，具有两个在天线端口和两个相对的信号输入/输出端口之间双向连接的共振室系列，每一系列共振室具有连接到天线端口的最后一个共振腔室，并且第一谐振腔室连接在相应的信号输入/ 信号输入/输出端口和关联的最后一个共振室进行交叉耦合反馈，提高信号接收机使用腔体滤波器接收的信号的质量，并增强信号传输性能。

9. 发明授权

US07898361B2 Antenna feed copling structure of a duplexer 有权
标题翻译：双工器的天线馈线结构
公开(公告)号：US07898361B2
公开(公告)日：2011-03-01
申请号：US12402508
申请日：2009-03-12
申请人： Jen-Ti Peng , Chien-Chih Lee
发明人： Jen-Ti Peng , Chien-Chih Lee
IPC分类号： H01P5/12
CPC分类号： H01P1/2136
摘要： An antenna feed coupling structure of a duplexer is disclosed to include a base defining a detoured resonance cavity and a T-shaped feed-in cavity perpendicularly intersecting the resonance cavity and a signal input port in connection with the head of the feed-in cavity, a cover closing the base, and adjustment rods mounted in the base and suspending in the resonance cavity and the feed-in cavity. The adjustment rods include two feed-in adjustment rods and two coupling structure adjustment rods suspending in the intersected area between the resonance cavity and the feed-in cavity and respectively kept in horizontal and in vertical relative to the resonance cavity and rotatable inwards and outwards to adjust the feed-in amount and coupling structure amount of the antenna feed coupling structure respectively.
摘要翻译：公开了一种双工器的天线馈电耦合结构，其包括限定迂回谐振腔和与谐振腔垂直相交的T形馈入腔和与馈入腔的头相连的信号输入端的基座，封闭基座的盖子以及安装在基座中并悬挂在谐振腔和馈入腔中的调节杆。调节杆包括两个馈入调节杆和两个耦合结构调节杆，悬挂在谐振腔和馈入腔之间的相交区域中，并且分别保持在相对于谐振腔的水平和垂直方向并向内和向外可旋转分别调整天线馈电耦合结构的馈入量和耦合结构量。

10. 发明授权

US06395645B1 Anisotropic wet etching 有权
标题翻译：各向异性湿蚀刻
公开(公告)号：US06395645B1
公开(公告)日：2002-05-28
申请号：US09137446
申请日：1998-08-06
申请人： Chen-Kuei Chung , Chien-Chih Lee , Ching-Yi Wu
发明人： Chen-Kuei Chung , Chien-Chih Lee , Ching-Yi Wu
IPC分类号： H01L21302
CPC分类号： H01L21/30608 , H01L21/3083
摘要： A method for anisotropic wet etching is disclosed. In to this invention, a photo mask for the etching mask suited in the anisotropic wet etching is provided. In the photo mask, a pattern with a series of adjacent corners having a substantially rectangular, angle is formed. At the corner areas compensational patterns comprising masked grids are prepared. The pattern on the photo mask is then transferred to an etching mask of a semiconductor substrate such that a multi-level terrace structure with fine corners may be prepared during the etching of the substrate. The method of this invention is also applicable to semiconductor materials with the same diamond structure as that of silicon.
摘要翻译：公开了一种用于各向异性湿蚀刻的方法。在本发明中，提供了适用于各向异性湿蚀刻中的蚀刻掩模用光掩模。在光掩模中，形成具有大致矩形角的一系列相邻角的图案。在拐角处，准备包括掩蔽网格的补偿图案。然后将光掩模上的图案转移到半导体衬底的蚀刻掩模，使得可以在蚀刻基板期间制备具有细角的多层平台结构。本发明的方法也适用于具有与硅相同的金刚石结构的半导体材料。

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