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1. 发明授权

US5510641A Majority carrier power diode 失效
标题翻译：多数载波功率二极管
公开(公告)号：US5510641A
公开(公告)日：1996-04-23
申请号：US40920
申请日：1993-03-31
申请人： Hsian-Pei Yee , Peter O. Lauritzen , Sinclair S. Yee
发明人： Hsian-Pei Yee , Peter O. Lauritzen , Sinclair S. Yee
IPC分类号： H01L29/78 , H01L29/06 , H01L29/861 , H01L29/76
CPC分类号： H01L29/861 , H01L29/0696 , H01L29/7802
摘要： A power diode having substantially no reverse-recovery time and relatively high conductance. The power diode is a majority carrier semiconductor having a structure that is similar to that of a metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate, and a body. In one embodiment, to increase conductance of the power diode, a linked-cell configuration that reverses the geometry of a conventional cell-type MOSFET is employed, thereby increasing the width of a conductance channel over that of a conventional MOSFET, and compensating for a relatively low level of inversion in the channel region. Negative and positive feedback circuits are used to further improve the conductance of the power diode by dynamically setting a bias voltage applied between the gate and the source to a level just below a threshold voltage. In the positive feedback circuit, the magnitude of the bias voltage is greater than the threshold voltage if the power diode is forward biased, but substantially reduced if the power diode is reverse biased, thereby minimizing its turn-on delay without risking reverse conductance. Although separate components are used for biasing the device in the disclosed embodiments, it is contemplated that these components be integrated on a common substrate with the source, drain, and gate in a commercially practiced preferred embodiment. Another embodiment employs a charge carrier region diffused into the body and at least in part underlying the gate. This region provides a variable threshold voltage along the channel and reduces the effective length of the channel to increase its conductance. A threshold voltage ranges between a higher value, V.sub.TMAX, adjacent the source, to a lower value, V.sub.T, elsewhere in the device.
摘要翻译：功率二极管基本上没有反向恢复时间和相对高的电导率。功率二极管是具有类似于金属氧化物半导体场效应晶体管（MOSFET）的结构的多数载流子半导体，其包括源极，漏极，栅极和主体。在一个实施例中，为了增加功率二极管的电导，采用反转常规电池型MOSFET的几何形状的连接电池配置，从而增加电导通道的宽度超过常规MOSFET的宽度，并补偿通道区域反相水平相对较低。负和正反馈电路用于通过将施加在栅极和源极之间的偏置电压动态地设置到刚好低于阈值电压的电平来进一步提高功率二极管的电导。在正反馈电路中，如果功率二极管正向偏置，则偏置电压的大小大于阈值电压，但如果功率二极管被反向偏置，则极大地减小，从而使其导通延迟最小化，而不会产生反向导通风险。虽然在所公开的实施例中使用单独的部件来偏置器件，但是可以设想，在商业上实践的优选实施例中，这些部件在源极，漏极和栅极上集成在公共衬底上。另一个实施例采用扩散到体内并至少部分地位于栅极下方的电荷载体区域。该区域沿着通道提供可变的阈值电压并且减小通道的有效长度以增加其电导。阈值电压范围在与源相邻的较高值VTMAX之间，设备的其他位置的VT值较低。

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