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    • 7. 发明授权
    • Method of manufacturing a very deep STI (shallow trench isolation)
    • 制造非常深的STI(浅沟槽隔离)的方法
    • US06436791B1
    • 2002-08-20
    • US09880259
    • 2001-06-14
    • Shih-Chi LinSzu-An WuYing-Lang WangGuey-Bao Huang
    • Shih-Chi LinSzu-An WuYing-Lang WangGuey-Bao Huang
    • H01L21302
    • H01L21/76224
    • A method of forming a shallow trench isolation structure comprising the following steps. A substrate having an upper surface is provided. A pad oxide layer is formed upon the substrate. A nitride layer is formed over the pad oxide layer. The nitride layer having an upper surface. A trench is formed by etching the nitride layer, pad oxide layer and a portion of the substrate. The trench having a bottom and side walls. An oxide film is deposited upon the etched nitride layer surface, and the bottom and side walls of trench. The oxide film is removed from over the etched nitride layer surface, and the bottom of the trench to expose a portion of substrate within the trench. The removal of oxide film leaving oxide spacers over the trench side walls. Epitaxial silicon is selectively deposited over the exposed portion of substrate, filling the trench. A thermal oxide layer is formed over the epitaxial silicon, annealing the interface between the epitaxial silicon and the oxide spacers. The etched nitride layer and the oxide layer from over the etched substrate; and a portion of the oxide spacers extending above the surface of the etched substrate are removed, whereby the shallow trench isolation structure is formed within the trench.
    • 一种形成浅沟槽隔离结构的方法,包括以下步骤。 提供具有上表面的基板。 衬底氧化层形成在衬底上。 在衬垫氧化物层上形成氮化物层。 氮化物层具有上表面。 通过蚀刻氮化物层,衬垫氧化物层和衬底的一部分来形成沟槽。 沟槽具有底部和侧壁。 在蚀刻的氮化物层表面和沟槽的底部和侧壁上沉积氧化物膜。 从蚀刻的氮化物层表面上方的氧化膜和沟槽的底部去除氧化膜,以露出沟槽内的衬底的一部分。 去除在沟槽侧壁上留下氧化物间隔物的氧化物膜。 外延硅被选择性地沉积在衬底的暴露部分上,填充沟槽。 在外延硅上形成热氧化层,退火外延硅与氧化物间隔物之间​​的界面。 蚀刻的氮化物层和来自蚀刻的衬底上的氧化物层; 并且去除在蚀刻的衬底的表面上方延伸的氧化物间隔物的一部分,由此在沟槽内形成浅沟槽隔离结构。
    • 9. 发明授权
    • Method to form polysilicon resistors shielded from hydrogen intrusion
    • 形成多晶硅电阻屏蔽氢入侵的方法
    • US6069063A
    • 2000-05-30
    • US283841
    • 1999-04-01
    • Juin-Jie ChangShih-Chi LinYen-Ming ChenYung-Lung Hsu
    • Juin-Jie ChangShih-Chi LinYen-Ming ChenYung-Lung Hsu
    • H01L21/02H01L21/3115H01L21/314H01L21/425
    • H01L28/20H01L21/31155H01L21/3144
    • A method to form polysilicon resistors shielded from hydrogen intrusion is described. A semiconductor substrate is provided. Field oxide isolation regions are provided overlying the substrate. A polysilicon layer is deposited overlying the field oxide regions and the substrate. The polysilicon layer is etched away where it is not covered by a mask to form a polysilicon resistor. An interlevel dielectric layer is deposited overlying the polysilicon resistor. Nitrogen ions are implanted into the interlevel dielectric layer. The interlevel dielectric layer is annealed to form a silicon oxynitride shield layer in the interlevel dielectric layer. Contact openings are etched through the interlevel dielectric layer to the polysilicon resistor. The contact openings are filled with a metal layer. The metal layer is patterned. The patterned metal layer is covered with a passivation layer wherein the passivation layer contains hydrogen atoms and wherein the silicon oxynitride shield layer prevents hydrogen atoms from penetrating the polysilicon resistor. The integrated circuit is completed.
    • 描述了形成多晶硅电阻器防止氢侵入的方法。 提供半导体衬底。 场氧化物隔离区设置在衬底上。 叠加在场氧化物区域和衬底上的多晶硅层。 多晶硅层被蚀刻掉,其未被掩模覆盖以形成多晶硅电阻器。 沉积层叠介质层覆盖多晶硅电阻器。 将氮离子注入到层间电介质层中。 对层间电介质层进行退火,在层间电介质层中形成氮氧化硅屏蔽层。 接触开口通过层间介质层蚀刻到多晶硅电阻器。 接触开口填充有金属层。 金属层被图案化。 图案化的金属层被钝化层覆盖,其中钝化层含有氢原子,并且其中氮氧化硅屏蔽层防止氢原子穿透多晶硅电阻器。 集成电路完成。