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1. 发明授权

US07943930B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07943930B2
公开(公告)日：2011-05-17
申请号：US12143035
申请日：2008-06-20
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

2. 发明授权

US07391051B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07391051B2
公开(公告)日：2008-06-24
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L31/00
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

3. 发明申请

US20060192202A1 Semiconductor device forming method 失效
公开(公告)号：US20060192202A1
公开(公告)日：2006-08-31
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/786
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

4. 发明申请

US20050020006A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050020006A1
公开(公告)日：2005-01-27
申请号：US10926059
申请日：2004-08-26
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/469
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

5. 发明授权

US06642073B1 Semiconductor circuit and method of fabricating the same 失效
标题翻译：半导体电路及其制造方法
公开(公告)号：US06642073B1
公开(公告)日：2003-11-04
申请号：US09112226
申请日：1998-07-09
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L27/1277 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L21/02686
摘要： Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.
摘要翻译：通过形成非晶硅膜开始制造半导体电路的方法。然后，含有至少一个催化元素的第二层被形成为与非晶硅膜紧密接触，或者将催化元素引入到非晶硅膜中。该非晶硅膜选择性地用激光或其它等效的强光照射以使非晶硅膜结晶。

6. 发明授权

US06610142B1 Process for fabricating semiconductor and process for fabricating semiconductor device 失效
标题翻译：用于制造半导体的工艺和用于制造半导体器件的工艺
公开(公告)号：US06610142B1
公开(公告)日：2003-08-26
申请号：US08977944
申请日：1997-11-24
申请人： Toru Takayama , Hongyong Zhang , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Toru Takayama , Hongyong Zhang , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： C30B1322
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78654 , H01L29/78675
摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400 to 650° C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.
摘要翻译：一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度范围内或在不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。还公开了使用其制造薄膜晶体管的工艺。

7. 发明授权

US6090646A Method for producing semiconductor device 失效
公开(公告)号：US6090646A
公开(公告)日：2000-07-18
申请号：US935338
申请日：1997-10-02
申请人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
发明人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L21/00
CPC分类号： H01L21/2026 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

8. 发明授权

US5595944A Transistor and process for fabricating the same 失效
标题翻译：晶体管及其制造方法
公开(公告)号：US5595944A
公开(公告)日：1997-01-21
申请号：US360600
申请日：1994-12-21
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/00 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/36 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786
CPC分类号： H01L21/26506 , H01L21/02532 , H01L21/02672 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78675 , H01L29/78678
摘要： A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
摘要翻译：一种制造薄膜晶体管的方法，包括使非晶硅膜结晶，在其上形成栅极绝缘膜和栅电极，以自对准的方式注入杂质，粘附含有催化剂元素的涂层，其加速了硅膜，并在低于衬底的变形温度的温度下退火所得到的结构，以激活掺杂的杂质。否则，可以通过离子注入等将催化剂元素引入到杂质区域中而将其结合到结构中。还有一种制造薄膜晶体管的方法，其包括在衬底上形成栅电极，栅极绝缘膜和非晶硅膜，将杂质注入到非晶硅膜中以形成源区和漏区作为杂质区，引入通过使含有催化剂元素的涂层通过离子掺杂等粘合而将催化剂元素进入杂质区域，并在低于基板的变形温度的温度下对所得结构退火以活化掺杂的杂质。

9. 发明授权

US5569610A Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity 失效
标题翻译：制造具有不同结晶度的多晶硅TFT的方法
公开(公告)号：US5569610A
公开(公告)日：1996-10-29
申请号：US207185
申请日：1994-03-08
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L27/1277 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L21/02686
摘要： Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.
摘要翻译：通过形成非晶硅膜开始制造半导体电路的方法。然后，含有至少一个催化元素的第二层被形成为与非晶硅膜紧密接触，或者将催化元素引入到非晶硅膜中。该非晶硅膜选择性地用激光或其它等效的强光照射以使非晶硅膜结晶。

10. 发明授权

US06987283B2 Semiconductor device structure 失效
标题翻译：半导体器件结构
公开(公告)号：US06987283B2
公开(公告)日：2006-01-17
申请号：US10180015
申请日：2002-06-27
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/76
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

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