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    • 5. 发明申请
    • Sensors based on giant planar hall effect in dilute magnetic semiconductors
    • 基于稀薄磁性半导体中巨大平面霍尔效应的传感器
    • US20050126299A1
    • 2005-06-16
    • US11049104
    • 2005-02-03
    • Hongxing TangMichael Roukes
    • Hongxing TangMichael Roukes
    • G01L9/00G01L9/16G11B5/127
    • G01L9/0042G01L9/16
    • Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.
    • 基于铁磁性半导体的传感器装置,包括用于检测压力变化的传感器和用于检测磁场的传感器,例如磁记录介质中的切换事件。 本发明的压力传感器使用磁阻测量技术,特别是GPHE技术检测压力变化。 诸如磁性开关检测传感器的磁场检测传感器包括相对于已知材料和技术提供增强灵敏度的基于铁磁性半导体的材料。 根据本发明的这种磁切换检测传感器作为用于HDD和其他磁存储技术的读头传感器是特别有用的。