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1. 发明授权

US08585844B2 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US08585844B2
公开(公告)日：2013-11-19
申请号：US13324287
申请日：2011-12-13
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： B32B17/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.
摘要翻译：通过用通过形成双层生坯制成的部件代替使用的部件并共同烧结双层生坯以形成三层部件来安装等离子体处理室的部件的方法。三层组件包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。安装该部件使得当腔室运行时，氧化钇的外层暴露于等离子体环境中。

2. 发明授权

US08097105B2 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US08097105B2
公开(公告)日：2012-01-17
申请号：US11652048
申请日：2007-01-11
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： C03B29/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150° C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.
摘要翻译：提供延长作为等离子体室材料的氧化钇的寿命的两种方法。一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。两层在烧结过程中紧密接触。在优选的实施方案中，三层组分包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。可选地，在烧结过程中将盘压在一起。所得到的三层组分的孔隙率非常低。优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。第二种方法包括通过将组分的所有氧化钇表面上的密封剂刷刷，将零件的室温粘度低于50cP的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿在N2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

3. 发明申请

US20120144640A1 EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL 有权
标题翻译：氧化铝作为等离子体材料延长生命周期
公开(公告)号：US20120144640A1
公开(公告)日：2012-06-14
申请号：US13324287
申请日：2011-12-13
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： B23P6/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.
摘要翻译：通过用通过形成双层生坯制成的部件代替使用的部件并共同烧结双层生坯以形成三层部件来安装等离子体处理室的部件的方法。三层组件包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。安装该部件使得当腔室运行时，氧化钇的外层暴露于等离子体环境中。

4. 发明申请

US20080169588A1 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US20080169588A1
公开(公告)日：2008-07-17
申请号：US11652048
申请日：2007-01-11
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： H05H1/26
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150° C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.
摘要翻译：提供延长作为等离子体室材料的氧化钇的寿命的两种方法。一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。两层在烧结过程中紧密接触。在优选的实施方案中，三层组分包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。可选地，在烧结过程中将盘压在一起。所得到的三层组分的孔隙率非常低。优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。第二种方法包括通过将组分的所有氧化钇表面上的密封剂刷刷，将零件的室温粘度低于50cP的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿在N2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

5. 发明申请

US20110146909A1 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的组件的清洁清洗表面的方法
公开(公告)号：US20110146909A1
公开(公告)日：2011-06-23
申请号：US13016561
申请日：2011-01-28
申请人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
发明人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
IPC分类号： C01B33/12 , B08B3/00 , H01L21/3065
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

6. 发明申请

US20050274396A1 Methods for wet cleaning quartz surfaces of components for plasma processing chambers 审中-公开
标题翻译：湿法清洗等离子体处理室部件的石英表面的方法
公开(公告)号：US20050274396A1
公开(公告)日：2005-12-15
申请号：US10863360
申请日：2004-06-09
申请人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
发明人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
IPC分类号： B08B3/12 , C23C16/00 , C23C16/44
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

7. 发明授权

US08545639B2 Method of cleaning aluminum plasma chamber parts 有权
标题翻译：铝等离子体室部件的清洗方法
公开(公告)号：US08545639B2
公开(公告)日：2013-10-01
申请号：US13285203
申请日：2011-10-31
申请人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
发明人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01J37/32853 , C11D7/08 , C11D11/0047 , H01J37/32862
摘要： A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.
摘要翻译：一种清洁等离子体室的部件的表面的方法，其中所述部件具有铝或阳极氧化的铝表面，所述方法包括以下步骤：将所述部件的表面浸入稀释的硫酸过氧化物（DSP）溶液中; 在从DSP溶液中除去表面后，用水冲洗表面; 将表面浸入稀硝酸（HNO3）溶液中; 在从稀硝酸溶液中除去表面后，用水冲洗表面; 并重复至少两次将表面浸入稀硝酸的步骤，然后喷淋冲洗该表面。

8. 发明申请

US20130104930A1 METHOD OF CLEANING ALUMINUM PLASMA CHAMBER PARTS 有权
标题翻译：清洁铝等离子体室部件的方法
公开(公告)号：US20130104930A1
公开(公告)日：2013-05-02
申请号：US13285203
申请日：2011-10-31
申请人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
发明人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
IPC分类号： C23G1/02
CPC分类号： H01J37/32853 , C11D7/08 , C11D11/0047 , H01J37/32862
摘要： A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.
摘要翻译：一种清洁等离子体室的部件的表面的方法，其中所述部件具有铝或阳极氧化的铝表面，所述方法包括以下步骤：将所述部件的表面浸入稀释的硫酸过氧化物（DSP）溶液中; 在从DSP溶液中除去表面后，用水冲洗表面; 将表面浸入稀硝酸（HNO3）溶液中; 在从稀硝酸溶液中除去表面后，用水冲洗表面; 并重复至少两次将表面浸入稀硝酸的步骤，然后喷淋冲洗该表面。

9. 发明授权

US08276604B2 Peripherally engaging electrode carriers and assemblies incorporating the same 有权
标题翻译：外围接合电极载体和结合其的组件
公开(公告)号：US08276604B2
公开(公告)日：2012-10-02
申请号：US12164288
申请日：2008-06-30
申请人： Jason Augustino , Armen Avoyan , Yan Fang , Duane Outka , Hong Shih , Stephen Whitten
发明人： Jason Augustino , Armen Avoyan , Yan Fang , Duane Outka , Hong Shih , Stephen Whitten
IPC分类号： H05H1/34 , H01J37/02 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01J37/32541 , H01J37/32009 , H01J37/32605 , H01L21/67069
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.
摘要翻译：根据本公开的一个实施例，提供了包括多组分电极和外围接合电极载体的组件。外周接合电极载体包括载体框架和多个往复电极支撑件。多组分电极位于载体框架的电极容纳孔中。电极的背板包括围绕其周边形成的多个安装凹部。往复式电极支撑件可以往复运动进入和离开安装凹槽。考虑到更广泛和更窄范围的另外的实施例。

10. 发明授权

US08216388B2 Extending storage time of removed plasma chamber components prior to cleaning thereof 有权
标题翻译：在清洁之前延长去除的等离子体腔室部件的储存时间
公开(公告)号：US08216388B2
公开(公告)日：2012-07-10
申请号：US13151383
申请日：2011-06-02
申请人： Hong Shih , Qian Fu , Tuochuan Huang , Raphael Casaes , Duane Outka
发明人： Hong Shih , Qian Fu , Tuochuan Huang , Raphael Casaes , Duane Outka
IPC分类号： B08B17/04 , B08B3/08 , B05D3/06
CPC分类号： C23C16/4404
摘要： A method of extending storage time prior to cleaning a component of a plasma chamber is provided. The method comprises removing the component from the chamber, covering a thermal spray coating on the component while the surface is exposed to atmospheric air, storing the component, optionally removing the covering, and optionally wet cleaning reaction by-products from the thermal spray coating. Alternatively, instead of, or in addition to covering a thermal spray coating on the component, the component can be placed into a desiccator or dry-box.
摘要翻译：提供了在清洁等离子体室的部件之前延长存储时间的方法。该方法包括从室中去除组分，在表面暴露于大气中时覆盖组件上的热喷涂层，储存组分，任选地除去覆盖物，以及任选地从热喷涂涂层湿化清洗反应副产物。或者，代替或除了覆盖组件上的热喷涂之外，组件可以放置在干燥器或干燥箱中。

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