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1. 发明申请

US20110212388A1 ADVANCED PHASE SHIFT LITHOGRAPHY AND ATTENUATED PHASE SHIFT MASK FOR NARROW TRACK WIDTH D WRITE POLE DEFINITION 有权
标题翻译：先进的相位移动平移和衰减相位切换掩码用于窄轨道宽度D写入点定义
公开(公告)号：US20110212388A1
公开(公告)日：2011-09-01
申请号：US12714159
申请日：2010-02-26
申请人： Hong Du , Douglas J. Werner , Yi Zheng
发明人： Hong Du , Douglas J. Werner , Yi Zheng
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/32 , G03F1/00 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A method for patterning a wafer using a phase shifting photolithography that can produce a critical symmetrical 2-dimensional structure such as a magnetic write pole of a magnetic write head. In one aspect of the invention, a photolithographic mask has an opaque portion with narrow, transparent phase shifting regions at either side of the opaque portion. A non-phase shifted region extends beyond the narrow phase shifted portion at either side of the structure. The phase shifted regions are symmetrical about the opaque region so that the image produced on the wafer is completely symmetrical. In another aspect of the invention, a phase shifted region in formed in a transparent medium with non-phase shifted regions at either side of the phase shifted region. The transition between the phase shifted region and non-phase shifted region alone defines a pattern on the wafer, without the need for an opaque structure on the mask.
摘要翻译：使用可产生关键对称二维结构（诸如磁写头的磁写磁极）的相移光刻法来构图晶片的方法。在本发明的一个方面，光刻掩模具有不透明部分，在不透明部分的任一侧具有窄的透明相移区域。非相移区域在结构的任一侧延伸超过窄相移部分。相移区域关于不透明区域是对称的，使得在晶片上产生的图像是完全对称的。在本发明的另一方面中，形成在相移区域的任一侧上的具有非相移区域的透明介质中的相移区域。相移区域和非相移区域之间的转变仅在晶片上限定了图案，而不需要掩模上的不透明结构。

2. 发明授权

US08192900B2 Advanced phase shift lithography and attenuated phase shift mask for narrow track width d write pole definition 有权
标题翻译：高级相移光刻和衰减相移掩模，用于窄轨宽d写磁极定义
公开(公告)号：US08192900B2
公开(公告)日：2012-06-05
申请号：US12714159
申请日：2010-02-26
申请人： Hong Du , Douglas J. Werner , Yi Zheng
发明人： Hong Du , Douglas J. Werner , Yi Zheng
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/00 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A method for patterning a wafer using a phase shifting photolithography that can produce a critical symmetrical 2-dimensional structure such as a magnetic write pole of a magnetic write head. In one aspect of the invention, a photolithographic mask has an opaque portion with narrow, transparent phase shifting regions at either side of the opaque portion. A non-phase shifted region extends beyond the narrow phase shifted portion at either side of the structure. The phase shifted regions are symmetrical about the opaque region so that the image produced on the wafer is completely symmetrical. In another aspect of the invention, a phase shifted region in formed in a transparent medium with non-phase shifted regions at either side of the phase shifted region. The transition between the phase shifted region and non-phase shifted region alone defines a pattern on the wafer, without the need for an opaque structure on the mask.
摘要翻译：使用可产生关键对称二维结构（诸如磁写头的磁写磁极）的相移光刻法来构图晶片的方法。在本发明的一个方面，光刻掩模具有不透明部分，在不透明部分的任一侧具有窄的透明相移区域。非相移区域在结构的任一侧延伸超过窄相移部分。相移区域关于不透明区域是对称的，使得在晶片上产生的图像是完全对称的。在本发明的另一方面中，形成在相移区域的任一侧上的具有非相移区域的透明介质中的相移区域。相移区域和非相移区域之间的转变仅在晶片上限定了图案，而不需要掩模上的不透明结构。

3. 发明授权

US07974047B2 Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface 有权
标题翻译：电流垂直于平面差分磁阻读头设计，使用靠近空气轴承表面的电流限制结构
公开(公告)号：US07974047B2
公开(公告)日：2011-07-05
申请号：US12202675
申请日：2008-09-02
申请人： Hardayal S. Gill , Douglas J. Werner , Wen-Chien Hsiao , Wipul P. Jayasekara
发明人： Hardayal S. Gill , Douglas J. Werner , Wen-Chien Hsiao , Wipul P. Jayasekara
IPC分类号： G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译：公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。第二导电引线与第二MR传感器接触。注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。

4. 发明授权

US07563381B2 High milling resistance write pole fabrication method for perpendicular recording 失效
标题翻译：用于垂直记录的高铣削电阻写极制造方法
公开(公告)号：US07563381B2
公开(公告)日：2009-07-21
申请号：US10836867
申请日：2004-04-30
申请人： Amanda Baer , Quang Le , Kim Lee , Aron Pentek , Douglas J. Werner , Sue S. Zhang
发明人： Amanda Baer , Quang Le , Kim Lee , Aron Pentek , Douglas J. Werner , Sue S. Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/1871 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49043
摘要： A method for constructing a tapered write pole, the method including the use of a bilayer hard mask.
摘要翻译：一种用于构造锥形写入极的方法，该方法包括使用双层硬掩模。

5. 发明授权

US06786803B2 Onboard multiphase electronic lapping guide design for MR heads 失效
公开(公告)号：US06786803B2
公开(公告)日：2004-09-07
申请号：US10299219
申请日：2002-11-19
申请人： Linden J. Crawforth , Douglas J. Werner , Benjamin L. Wang , Timothy J. Minvielle
发明人： Linden J. Crawforth , Douglas J. Werner , Benjamin L. Wang , Timothy J. Minvielle
IPC分类号： B24B4900
CPC分类号： G11B5/1871 , G11B5/39
摘要： An onboard electronic lapping guide for lapping a magneto-resistive head having a magneto-resistive sensor element disposed for electrical communication with a pair of sensor electrical leads. The lapping guide includes an electronic lapping guide resistive element disposed for electrical communication with the sensor electrical leads. The resistive element has a predetermined height in a lapping direction and is adapted to produce an electrical resistance in the presence of a lapping current that increases as said resistive element height is reduced during lapping. A lapping method and a method of forming the onboard electronic lapping guide are also disclosed.

6. 发明授权

US5581427A Peak enhanced magnetoresistive read transducer 失效
标题翻译：峰值增强型磁阻读取传感器
公开(公告)号：US5581427A
公开(公告)日：1996-12-03
申请号：US238110
申请日：1994-05-04
申请人： Joseph Shao-Ying Feng , Mohamad T. Krounbi , Douglas J. Werner
发明人： Joseph Shao-Ying Feng , Mohamad T. Krounbi , Douglas J. Werner
IPC分类号： G11B5/00 , G11B5/09 , G11B5/39 , G11B5/30
CPC分类号： G11B5/3932 , G11B5/00 , G11B5/3903 , G11B2005/0008 , G11B5/09
摘要： An MR read transducer is provided which has a central region located between a pair of end regions. The central region and the pair of end regions extend along a width of the MR read transducer. An MR layer extends along the width of the MR read transducer and has an active layer portion located between a pair of passive layer portions, the active layer portion being located in the central region and each passive layer portion being located in a respective end region. A layer is located in the central region and magnetostatically coupled to the active layer portion of the MR layer for transversely biasing the MR layer. Each passive layer portion of the MR layer is permeable so that it is responsive to externally applied magnetic fields. The passive layer portions of the MR layer are the only permeable portions of the MR read transducer in the end regions of the MR read transducer, so a response by either passive layer of the MR layer to a magnetic signal will result in a supralinearly increased net response of the active portion of the MR layer to the same applied magnetic field signal. This arrangement increases the amplitude and the sharpness of the peak of a signal response of the MR read transducer to the field from a recorded transition.
摘要翻译：提供了一种MR读取换能器，其具有位于一对端部区域之间的中心区域。中心区域和一对末端区域沿着MR读取换能器的宽度延伸。 MR层沿着MR读取换能器的宽度延伸，并且具有位于一对无源层部分之间的有源层部分，有源层部分位于中心区域中，每个无源层部分位于相应的端部区域中。层位于中心区域并且静磁耦合到MR层的有源层部分以横向偏置MR层。 MR层的每个无源层部分是可渗透的，使得其响应于外部施加的磁场。 MR层的无源层部分是MR读取换能器的端部区域中的MR读取换能器的唯一可渗透部分，因此MR层的无源层对磁信号的响应将导致网络上部网络 MR层的有源部分对相同的施加的磁场信号的响应。这种布置将MR读取传感器的信号响应的峰值的幅度和锐度从记录的转变增加到场。

7. 发明授权

US5557491A Two terminal single stripe orthogonal MR head having biasing conductor integral with the lead layers 失效
标题翻译：具有与引线层成一体的偏置导体的两端单条带正交MR磁头
公开(公告)号：US5557491A
公开(公告)日：1996-09-17
申请号：US292647
申请日：1994-08-18
申请人： Hardayal S. Gill , Douglas J. Werner
发明人： Hardayal S. Gill , Douglas J. Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A thin film orthogonal MR head is provided which includes a single MR stripe, a first lead layer which has first and second ends and a second lead layer which has first and second ends, the first end of the first lead layer being connected to the bottom portion of the MR stripe and the first end of the second lead layer being connected to a top portion of the MR stripe. First and second terminals are provided, the second end of the first layer being connected to the first terminal and the second end of the second lead layer being connected to the second terminal. The second lead layer extends across the MR stripe between the top and bottom portions of the MR stripe so as to induce a magnetic bias field into the MR stripe when a sense current is conducted through the MR stripe via the first and second terminals. Only the first and second terminals are employed for providing sense current for the MR stripe and transverse biasing of the MR stripe. The first lead is substantially planar across a bottom portion of the MR stripe so that a well formed second pole tip of a write head portion can be constructed.
摘要翻译：提供一种薄膜正交MR头，其包括单个MR条，具有第一和第二端的第一引线层和具有第一和第二端的第二引线层，第一引线层的第一端连接到底部 MR条的一部分和第二引线层的第一端连接到MR条的顶部。提供第一和第二端子，第一层的第二端连接到第一端子，第二引线层的第二端连接到第二端子。第二引线层跨过MR条的顶部和底部之间的MR条延伸，以便当感测电流通过第一和第二端子通过MR条纹传导时，将磁偏置场引入MR条纹。仅使用第一和第二端子来提供用于MR条纹的感测电流和MR条纹的横向偏置。第一引线在MR条的底部基本上是平面的，从而可以构造写头部分的良好形成的第二极尖。

8. 发明授权

US5532109A Azo dyes as adhesion promotion additive in polydimethylglutarimide 失效
标题翻译：偶氮染料作为粘合促进剂在聚二甲基戊二酰亚胺中
公开(公告)号：US5532109A
公开(公告)日：1996-07-02
申请号：US542479
申请日：1995-10-13
申请人： Mohamad T. Krounbi , Alfred F. Renaldo , Douglas J. Werner
发明人： Mohamad T. Krounbi , Alfred F. Renaldo , Douglas J. Werner
IPC分类号： G03F7/085 , H05K3/14 , G03F7/26
CPC分类号： G03F7/085 , H05K3/143
摘要： In a bi-layer lift-off process, the adhesion characteristics of a PMGI release layer are substantially improved by the use of ortho-hydroxy substituted 4-phenylazo compounds (azo dyes), a class of nonactinic dyes, as an adhesion promoter additive. These azo dyes, due to their chemical structure, exhibit selective binding to various metals by acting as a chelating ligand to the metal surface. Formulations of a specific azo dye, Sudan Orange G, at concentrations from 0.25 to 1.0 percent (by weight) in PMGI exhibits no loss of adhesion at prebake temperatures in the range of 120 to 160 degrees C.
摘要翻译：在双层剥离过程中，通过使用邻羟基取代的4-苯基偶氮化合物（偶氮染料）作为一种非活性染料作为粘合促进剂添加剂，使PMGI释放层的粘合特性得到显着改善。由于它们的化学结构，这些偶氮染料通过充当金属表面的螯合配体而显示出对各种金属的选择性结合。在PMGI中浓度为0.25-1.0％（重量）的特定偶氮染料，苏丹橙G的配方在预烘烤温度在120至160℃的范围内表现出没有损失。

9. 发明申请

US20100053818A1 CURRENT PERPENDICULAR TO PLANE DIFFERENTIAL MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权
标题翻译：当前对平面磁阻的平均读取头设计使用当前的约束结构接近空中轴承表面
公开(公告)号：US20100053818A1
公开(公告)日：2010-03-04
申请号：US12202675
申请日：2008-09-02
申请人： Hardayal S. Gill , Douglas J. Werner , Wen-Chien Hsiao , Wipul P. Jayasekara
发明人： Hardayal S. Gill , Douglas J. Werner , Wen-Chien Hsiao , Wipul P. Jayasekara
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译：公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。第二导电引线与第二MR传感器接触。注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。

10. 发明授权

US06762011B2 Deposition of a projection structure on a substrate using a negative mask and negative photoresist 失效
标题翻译：使用负掩模和负光致抗蚀剂在基板上沉积投影结构
公开(公告)号：US06762011B2
公开(公告)日：2004-07-13
申请号：US10123617
申请日：2002-04-15
申请人： Alfred F. Renaldo , Douglas J. Werner
发明人： Alfred F. Renaldo , Douglas J. Werner
IPC分类号： G03F726
CPC分类号： B82Y25/00 , B82Y10/00 , C25D5/022 , G11B5/3103 , G11B5/3116 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A projection structure is deposited on a substrate having a top surface by applying a negative photoresist overlying the substrate, and positioning a mask overlying the substrate and lying in a mask plane generally parallel to the top surface. The mask is a negative mask that is opaque in a region defining a location where the projection structure is to be deposited. The method further includes exposing the negative photoresist through the mask, baking and developing the exposed negative photoresist, and depositing the projection structure through the exposed and etched negative photoresist.
摘要翻译：通过施加覆盖在衬底上的负光致抗蚀剂，并且将覆盖在衬底上的掩模定位在大致平行于顶表面的掩模平面中，将投射结构沉积在具有顶表面的衬底上。掩模是在限定投影结构要沉积的位置的区域中不透明的负面掩模。该方法还包括通过掩模曝光负光致抗蚀剂，烘烤和显影曝光的负光致抗蚀剂，以及通过曝光和蚀刻的负光致抗蚀剂沉积投影结构。

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