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1. 发明授权

US06602434B1 Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window 失效
标题翻译：使用六氟丁二烯或相关碳氟化合物蚀刻氧化物的方法，并呈现宽的工艺窗口
公开(公告)号：US06602434B1
公开(公告)日：2003-08-05
申请号：US09440810
申请日：1999-11-15
申请人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Ruiping Wang , Gerald Z. Yin
发明人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free fluorocarbons having a low F/C ratio, specifically hexafluorobutadiene (C4F6), octafluoropentadiene (C5F8), hexafluorocyclobutene (C4F6), and hexafluorobenzene (C6F6). At least hexafluorobutadiene has a boiling point below 10° C. and is commercially available. Another aspect of the invention, uses an unsaturated fluorocarbon such as pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), both of which have boiling points below 10° C. and are commercially available. The fluorocarbon together with a substantial amount of a noble gas such as argon or xenon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, one of two two-step etch process is used. In the first, the source and bias power are reduced towards the end of the etch. In the second, the fluorocarbon is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE), preferably with an even larger amount of argon.
摘要翻译：氧化物蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明的一个方面使用具有低F / C比的四种无氢碳氟化合物之一，特别是六氟丁二烯（C 4 F 6），八氟戊二烯（C 5 F 8），六氟环丁烯（C 4 F 6）和六氟苯（C 6 F 6）。至少六氟丁二烯的沸点低于10℃，并且可商购。本发明的另一方面是使用沸点低于10℃的市售的不饱和氟烃如五氟丙烯（C3HF5）和三氟丙炔（C3HF3）。碳氟化合物与大量惰性气体如氩气或氙气一起被激发到电抗器中的高密度等离子体中，该电抗器将等离子体源功率感应耦合到腔室中，并且RF偏置支撑晶片的基座电极。优选地，使用两个两步蚀刻工艺中的一个。首先，源极和偏置功率在蚀刻结束时减小。第二，在主要步骤中使用碳氟化合物以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。相同的化学成分可用于磁增强反应离子蚀刻剂（MERIE）中，优选具有甚至更大量的氩。

2. 发明授权

US06797189B2 Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon 失效
标题翻译：使用六氟丁二烯或其他重质全氟化碳增强氧化硅蚀刻速率和氮化物选择性
公开(公告)号：US06797189B2
公开(公告)日：2004-09-28
申请号：US09276376
申请日：1999-03-25
申请人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Michael Rice , Kenneth S Collins , Chunshi Cui
发明人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Michael Rice , Kenneth S Collins , Chunshi Cui
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in which holes and corners have already been formed, for which the use of xenon also reduces faceting of the oxide. For this use, the relative amount of xenon need not be so high. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases.
摘要翻译：等离子体蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。主要含氟气体，优选六氟丁二烯（C 4 F 6）与显着更大量的稀释气氙（Xe）组合，增强氮化物选择性，而不会发生蚀刻停止。该化学物质也可用于蚀刻已经形成孔和角的氧化物，其中氙的使用也减少了氧化物的刻痕。对于这种用途，氙的相对量不必太高。本发明可以与相关的重碳氟化合物和其它氟基蚀刻气体一起使用。

3. 发明授权

US06174451B1 Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons 失效
标题翻译：使用六氟丁二烯和相关不饱和氢氟烃的氧化物蚀刻工艺
公开(公告)号：US06174451B1
公开(公告)日：2001-01-16
申请号：US09193056
申请日：1998-11-16
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L2131
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses one of three unsaturated 3- and 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), all of which have boiling points below 10° C. and are commercially available. The unsaturated hydrofluorocarbon together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明使用沸点低于10℃的三种不饱和3-和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6），五氟丙烯（C 3 HF 5）和三氟丙炔（C 3 H 3 F 3）中的一种，并且可商购。将不饱和氢氟烃与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

4. 发明授权

US06613691B1 Highly selective oxide etch process using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的高选择性氧化物蚀刻工艺
公开(公告)号：US06613691B1
公开(公告)日：2003-09-02
申请号：US09675360
申请日：2000-09-29
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L21475
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention preferably uses the unsaturated 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), which has a below 10°C. and is commercially available. The hexafluorobutadiene together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明优选使用低于10℃的不饱和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6）。并且是可商购的。将六氟丁二烯与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

5. 发明授权

US06544429B1 Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition 失效
标题翻译：用氙添加增强氧化硅蚀刻速率和衬底选择性
公开(公告)号：US06544429B1
公开(公告)日：2003-04-08
申请号：US09405869
申请日：1999-09-24
申请人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongchin Shan , Kenneth S. Collins , Chunshi Cui , Michael Rice
发明人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongchin Shan , Kenneth S. Collins , Chunshi Cui , Michael Rice
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) to enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in a time oxide etch in which holes and corners have already been formed, for example counterbore vias in a dual damascene structure. In this case, the relative amount of xenon need not be so high, but xenon still reduces faceting of the oxide corners. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases. The plasma etching preferably includes striking the plasma with argon, switching to xenon and the fluorine-based gas but at reduced bias power to stabilize the plasma, and then increasing the bias to a full etching level.
摘要翻译：等离子体蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。主要含氟气体，优选六氟丁二烯（C 4 F 6）与显着更大量的稀释气氙（Xe）组合以增强氮化物选择性而不发生蚀刻停止。该化学反应也可用于在其中形成孔和角的时间氧化物蚀刻中蚀刻氧化物，例如双镶嵌结构中的沉孔。在这种情况下，氙的相对量不需要太高，但是氙气仍然会减小氧化物角的小面积。本发明可以与相关的重碳氟化合物和其它氟基蚀刻气体一起使用。等离子体蚀刻优选地包括用氩气冲击等离子体，切换到氙气和氟基气体，但是以降低的偏置功率来稳定等离子体，然后将偏压增加到完全蚀刻水平。

6. 发明授权

US5965035A Self aligned contact etch using difluoromethane and trifluoromethane 失效
标题翻译：使用二氟甲烷和三氟甲烷进行自对准接触蚀刻
公开(公告)号：US5965035A
公开(公告)日：1999-10-12
申请号：US956641
申请日：1997-10-23
申请人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
发明人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76804
摘要： An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.
摘要翻译：对氮化物具有高度选择性的氧化物蚀刻工艺，从而有利于将二氧化硅自动对准接触蚀刻到下面的氮化硅薄层。该方法使用二氟甲烷（CH 2 F 2）作为其强聚合物形成和更大量的三氟甲烷（CHF 3）用于其强腐蚀，并且具有高稀释剂部分的氩（Ar）。蚀刻工艺在高密度等离子体蚀刻室中在约20毫乇的低压下进行。

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