专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110212323A1 METHOD FOR PREPARING OXIDE THIN FILM GAS SENSORS WITH HIGH SENSITIVITY 审中-公开
标题翻译：用于制备具有高灵敏度的氧化物薄膜气体传感器的方法
公开(公告)号：US20110212323A1
公开(公告)日：2011-09-01
申请号：US12874135
申请日：2010-09-01
申请人： Ho Won Jang , Seok-Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji-Won Choi , Hi Gyu Moon
发明人： Ho Won Jang , Seok-Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji-Won Choi , Hi Gyu Moon
IPC分类号： B32B5/16 , B05D3/00 , B05D3/12 , B05D3/06 , C23C14/34 , B29D7/01
CPC分类号： B05D1/005 , B05D3/142 , B05D5/04 , Y10T428/254
摘要： The present invention relates to a method for preparing oxide thin films with high sensitivity and reliability, which can be advantageously used in the fabrication of articles such as gas sensors. The present invention establishes a high reliability process for preparing large area microsphere templates which may be applicable to silicone semiconductor processes by simple plasma surface treatment and spin coating. The present invention achieves remarkably enhanced sensitivities of thin films of gas sensors by controlling the nanostructure shapes of hollow hemisphere oxide thin films by using simple plasma treatment. In particular, the gas sensor based on the nanostructured TiO2 hollow hemisphere according to the present invention exhibits higher sensitivity, faster response and recovery speed to CO gas over conventional TiO2 gas sensors.
摘要翻译：本发明涉及一种具有高灵敏度和可靠性的制备氧化物薄膜的方法，其可有利地用于制造诸如气体传感器的制品。本发明通过简单的等离子体表面处理和旋涂，建立了可应用于硅氧烷半导体工艺的大面积微球模板的高可靠性工艺。本发明通过使用简单的等离子体处理来控制中空半球氧化物薄膜的纳米结构形状，实现了气体传感器薄膜的敏感性的显着提高。特别地，根据本发明的基于纳米结构的TiO 2空心半球的气体传感器相对于常规的TiO 2气体传感器显示出比CO气体更高的灵敏度，更快的响应和恢复速度。

2. 发明授权

US08785924B2 High-sensitivity transparent gas sensor and method for manufacturing the same 有权
标题翻译：高灵敏度透明气体传感器及其制造方法
公开(公告)号：US08785924B2
公开(公告)日：2014-07-22
申请号：US13542874
申请日：2012-07-06
申请人： Ho Won Jang , Seok Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji Won Choi , Hi Gyu Moon
发明人： Ho Won Jang , Seok Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji Won Choi , Hi Gyu Moon
IPC分类号： H01L29/82
CPC分类号： B82Y15/00 , B82Y40/00 , G01N27/12
摘要： Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.
摘要翻译：公开了一种高灵敏度透明气体传感器及其制造方法。透明气体传感器包括透明基板，形成在透明基板上的透明电极和形成于透明电极上的透明气体感测层。透明气敏层具有在透明电极上形成的纳米柱和在纳米柱之间形成的气体扩散孔的纳米柱结构。

3. 发明申请

US20120211355A1 TRANSPARENT CONDUCTIVE COMPOSITION, TARGET, TRANSPARENT CONDUCTIVE THIN FILM USING THE TARGET AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：透明导电组合物，目标，使用目标的透明导电薄膜及其制造方法
公开(公告)号：US20120211355A1
公开(公告)日：2012-08-23
申请号：US13084150
申请日：2011-04-11
申请人： Ji Won CHOI , Seok Jin Yoon , Won Kook Choi , Jin Sang Kim , Chong Yun Kang , Ho Won Jang , Keun Jung
发明人： Ji Won CHOI , Seok Jin Yoon , Won Kook Choi , Jin Sang Kim , Chong Yun Kang , Ho Won Jang , Keun Jung
IPC分类号： C23C14/06 , C23C14/34 , H01B1/02
CPC分类号： C23C14/086 , C23C14/08 , C23C14/3414 , H01B1/08
摘要： Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10−3 Ω·cm and a high light transmittance of at least 90% even when deposition is carried out at room temperature. AlxZn1-xO In the above formula, x is within the range of 0.04≦x≦0.063.
摘要翻译：公开了一种透明导电组合物及其制造方法，该导电组合物包括下式的材料，靶材，使用该靶材的透明导电薄膜。所公开的透明导电组合物和透明导电薄膜具有优异的导电性（低电阻率）和高透光率。特别地，它们可以有用地应用于柔性电子器件，这可能被称为未来显示器行业的核心，因为它们具有不大于10-3＆OHgr·cm的低电阻率和至少90的高透光率即使在室温下进行沉积也是如此。 AlxZn1-xO在上式中，x在0.04＆nlE; x＆nlE; 0.063的范围内。

4. 发明授权

US09219198B2 Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elements 有权
标题翻译：金属电极的形成方法，半导体发光元件的制造方法以及氮化物系化合物半导体发光元件
公开(公告)号：US09219198B2
公开(公告)日：2015-12-22
申请号：US12296487
申请日：2007-04-24
申请人： Jong-Lam Lee , Ho Won Jang
发明人： Jong-Lam Lee , Ho Won Jang
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.
摘要翻译：一种形成金属电极的方法和半导体发光元件的制造方法包括提供其上形成有半导体层的基板; 在所述半导体层上形成接合金属层和反射金属层; 以及通过热处理工艺通过接合金属层和反射金属层的层反转而形成金属电极。半导体层和具有反射金属层的电极之间的界面特性通过层反转现象而增强。因为反射金属层均匀分布在半导体层上，所以可以获得高的反射率。此外，通过层反转来防止反射金属层的扩散，从而提高电极的热稳定性。并且通过在氧气氛下的热处理增加了用于产生孔的接收器的数量，从而可以降低接触电阻。

5. 发明授权

US07214325B2 Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment 有权
标题翻译：通过等离子体表面处理在室温n型氮化镓（GaN）上制造欧姆接触的方法
公开(公告)号：US07214325B2
公开(公告)日：2007-05-08
申请号：US10103523
申请日：2002-03-22
申请人： Jong Lam Lee , Ho Won Jang , Jong Kyu Kim , Changmin Jeon
发明人： Jong Lam Lee , Ho Won Jang , Jong Kyu Kim , Changmin Jeon
IPC分类号： H01L21/44
CPC分类号： H01L21/28575
摘要： Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.
摘要翻译：在形成金属接触之前，通过使用氯气感应耦合等离子体（ICP）蚀刻工艺处理GaN表面，在GaN膜上形成低收缩电阻金属接触。有利地，GaN是n型并掺杂有Si，而金属触点包括Ti和Al的交替层。另外，在金属接触形成之前，将GaN膜浸入HCl：H 2 O 2的溶液中。

6. 发明授权

US07081401B2 Method of fabricating a p-type ohmic electrode in gallium nitride based optical device 失效
标题翻译：在氮化镓基光学器件中制造p型欧姆电极的方法
公开(公告)号：US07081401B2
公开(公告)日：2006-07-25
申请号：US10390626
申请日：2003-03-19
申请人： Jong Lam Lee , Ho Won Jang
发明人： Jong Lam Lee , Ho Won Jang
IPC分类号： H01L21/28
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32 , H01L33/38
摘要： A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.
摘要翻译：一种基于氮化镓（GaN）的光学器件的p型欧姆电极及其制造方法。使用金红石结构过渡金属层，例如Ru，Ir或Os层或其氧化物层，或者使用由Ru层作为第二层的双层，制造GaN基光学器件中的p型欧姆电极基底层和Ni层，Ru层上的ITO层或AuO层。因此，p型欧姆电极的透光率良好，并且与p-GaN层具有低接触电阻时是热稳定的。

7. 发明申请

US20090278150A1 METHOD FOR FORMING METAL ELECTRODE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS AND NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENTS 有权
标题翻译：形成金属电极的方法，制造半导体发光元件和基于氮化物的化合物半导体发光元件的方法
公开(公告)号：US20090278150A1
公开(公告)日：2009-11-12
申请号：US12296487
申请日：2007-04-24
申请人： Jong-Lam Lee , Ho Won Jang
发明人： Jong-Lam Lee , Ho Won Jang
IPC分类号： H01L33/00 , H01L21/28 , H01L21/30
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.
摘要翻译：一种形成金属电极的方法和半导体发光元件的制造方法包括提供其上形成有半导体层的基板; 在所述半导体层上形成接合金属层和反射金属层; 以及通过热处理工艺通过接合金属层和反射金属层的层反转而形成金属电极。半导体层和具有反射金属层的电极之间的界面特性通过层反转现象而增强。因为反射金属层均匀分布在半导体层上，所以可以获得高的反射率。此外，通过层反转来防止反射金属层的扩散，从而提高电极的热稳定性。并且通过在氧气氛下的热处理增加了用于产生孔的接收器的数量，从而可以降低接触电阻。

8. 发明授权

US06762083B2 Method for manufacturing heterojunction field effect transistor device 失效
标题翻译：异质结场效应晶体管器件的制造方法
公开(公告)号：US06762083B2
公开(公告)日：2004-07-13
申请号：US10102856
申请日：2002-03-22
申请人： Jong-Lam Lee , Chang Min Jeon , Ho Won Jang
发明人： Jong-Lam Lee , Chang Min Jeon , Ho Won Jang
IPC分类号： H01L21338
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： A method for manufacturing a hetero-junction field effect transistor (HFET) device, which includes sequentially forming a non-doped GaN semiconductor layer and an AlGaN semiconductor layer on a substrate, separating devices from each other by etching the substrate, forming a photoresist layer pattern on the AlGaN semiconductor layer and forming gate electrodes by depositing a material on the substrate using the photoresist layer pattern, treating the surface of the AlGaN semiconductor layer, and forming a photoresist layer pattern on the substrate and forming ohmic electrodes by depositing a metal on the substrate using the photoresist layer pattern, is provided. Accordingly, it is possible to overcome a difficulty in aligning the gate electrode with the ohmic electrodes and prevent a substrate from having a step difference introduced by the ohmic electrodes because the gate electrode is formed before the ohmic electrodes are formed. It is possible to form a finer photoresist layer pattern used to form the gate electrode and improve the degree, to which the gate electrode is aligned with the ohmic electrodes. In addition, since the surface of an AlGaN semiconductor layer is treated with ICP before the ohmic electrodes are formed. Thus, it is possible to obtain ohmic characteristics without heat-treating a metal deposited on the AlGaN semiconductor layer to form the ohmic electrodes. Finally, since the maximum transconductance and maximum drain current characteristics of the AlGaN/GaN HFET device are good, the AlGaN/GaN HFET device can have improved amplification capability.
摘要翻译：一种用于制造异质结场效应晶体管（HFET）器件的方法，其包括在衬底上顺序地形成非掺杂GaN半导体层和AlGaN半导体层，通过蚀刻衬底将器件彼此分离，形成光致抗蚀剂层在AlGaN半导体层上形成图案并通过使用光致抗蚀剂层图案在衬底上沉积材料形成栅电极，处理AlGaN半导体层的表面，并在衬底上形成光致抗蚀剂层图案，并通过在金属上沉积金属形成欧姆电极提供了使用光致抗蚀剂层图案的基板。因此，由于在形成欧姆电极之前形成栅电极，所以可以克服将栅电极与欧姆电极对准的困难，并防止由欧姆电极引入的阶跃差。可以形成用于形成栅电极的更细的光致抗蚀剂层图案，并且提高栅电极与欧姆电极对准的程度。此外，由于在形成欧姆电极之前用ICP处理AlGaN半导体层的表面。因此，可以在不对AlGaN半导体层上沉积的金属进行热处理以形成欧姆电极的情况下获得欧姆特性。最后，由于AlGaN / GaN HFET器件的最大跨导和最大漏极电流特性良好，因此AlGaN / GaN HFET器件具有改善的放大能力。

9. 发明授权

US07754351B2 Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage 有权
标题翻译：外延（001）BiFeO3膜具有显着降低的疲劳和泄漏
公开(公告)号：US07754351B2
公开(公告)日：2010-07-13
申请号：US12117464
申请日：2008-05-08
申请人： Chang-Beom Eom , Ho Won Jang
发明人： Chang-Beom Eom , Ho Won Jang
IPC分类号： B32B9/04 , B32B43/00
CPC分类号： C30B29/24 , C30B23/02
摘要： The present invention provides free-standing heterostructures including a layer of BiFeO3 and a layer comprising a perovskite over which the BiFeO3 is epitaxially grown. The layer comprising the perovskite has been released from a substrate upon which it was originally grown. Also provided are methods for forming the free-standing heterostructures, which may include transferring the free-standing heterostructures to other host substrates.
摘要翻译：本发明提供了独立的异质结构，其包括BiFeO 3层和包含BiFeO 3外延生长的钙钛矿层。包含钙钛矿的层已经从其最初生长的基底上释放出来。还提供了形成独立的异质结构的方法，其可以包括将独立的异质结转移到其它主体基底。

10. 发明授权

US06818467B2 P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof 失效
标题翻译：氮化镓基光学器件中的P型欧姆电极及其制造方法
公开(公告)号：US06818467B2
公开(公告)日：2004-11-16
申请号：US10394045
申请日：2003-03-24
申请人： Jong Lam Lee , Soo Young Kim , Ho Won Jang
发明人： Jong Lam Lee , Soo Young Kim , Ho Won Jang
IPC分类号： H01L2940
CPC分类号： H01L33/42 , H01L21/28575 , H01L33/32
摘要： A gallium nitride (GaN) based optical device and a fabrication method thereof are provided. The GaN based optical device includes a substrate, a p-type GaN (p-GaN) layer formed on the substrate, and a p-type ohmic electrode formed on the p-GaN layer, wherein the p-type ohmic electrode is formed of a triple layer comprised of a nickel (Ni) layer, a gold (Au) layer and an indium tin oxide (ITO) layer sequentially formed. The thicknesses of the Ni layer and the Au layer forming the triple layer are smaller than the thickness of the ITO layer. When the p-type ohmic electrode in the GaN based optical device is formed of a triple layer comprised of Ni/Au/ITO, the Ni/Au layers reduce contact resistance and the ITO, which is a transparent, conductive oxide layer, increases transparency and increases luminescence efficiency.
摘要翻译：提供了一种基于氮化镓（GaN）的光学器件及其制造方法。 GaN基光学器件包括衬底，在衬底上形成的p型GaN（p-GaN）层和形成在p-GaN层上的p型欧姆电极，其中p型欧姆电极由依次形成由镍（Ni）层，金（Au）层和氧化铟锡（ITO）层构成的三层。形成三层的Ni层和Au层的厚度小于ITO层的厚度。当GaN基光学器件中的p型欧姆电极由由Ni / Au / ITO组成的三层形成时，Ni / Au层降低接触电阻，并且作为透明导电氧化物层的ITO增加透明度并提高发光效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式