专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07754351B2 Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage 有权
标题翻译：外延（001）BiFeO3膜具有显着降低的疲劳和泄漏
公开(公告)号：US07754351B2
公开(公告)日：2010-07-13
申请号：US12117464
申请日：2008-05-08
申请人： Chang-Beom Eom , Ho Won Jang
发明人： Chang-Beom Eom , Ho Won Jang
IPC分类号： B32B9/04 , B32B43/00
CPC分类号： C30B29/24 , C30B23/02
摘要： The present invention provides free-standing heterostructures including a layer of BiFeO3 and a layer comprising a perovskite over which the BiFeO3 is epitaxially grown. The layer comprising the perovskite has been released from a substrate upon which it was originally grown. Also provided are methods for forming the free-standing heterostructures, which may include transferring the free-standing heterostructures to other host substrates.
摘要翻译：本发明提供了独立的异质结构，其包括BiFeO 3层和包含BiFeO 3外延生长的钙钛矿层。包含钙钛矿的层已经从其最初生长的基底上释放出来。还提供了形成独立的异质结构的方法，其可以包括将独立的异质结转移到其它主体基底。

2. 发明授权

US5982034A Conductive oxide films 失效
标题翻译：导电氧化膜
公开(公告)号：US5982034A
公开(公告)日：1999-11-09
申请号：US156953
申请日：1993-11-19
申请人： Robert Joseph Cava , Chang-Beom Eom
发明人： Robert Joseph Cava , Chang-Beom Eom
IPC分类号： C01G49/10 , C01G1/00 , C23C14/08 , C30B25/06 , C30B29/22 , H01L21/02 , H01L21/8246 , H01L27/105 , H01L39/02 , H01L39/24 , H01L49/02 , H01L23/48
CPC分类号： H01L28/75 , H01L28/55 , H01L39/2458 , H01L39/2461
摘要： Thin films of isotropically conductive material are formed from Sr.sub.1-x Ca.sub.x RuO.sub.3. This material is easily deposited as a thin film by methods such as 90.degree. off-axis sputtering and laser ablation. The materials are epitaxially deposited on a wide variety of substrates and allow overlying epitaxial growth of an equally large number of significant oxides such as superconducting oxides, dielectric, and ferroelectric materials.
摘要翻译：各向同性传导材料的薄膜由Sr1-xCaxRuO3形成。该材料通过诸如90°离轴溅射和激光烧蚀之类的方法容易地作为薄膜沉积。这些材料外延沉积在各种各样的衬底上，并允许同等大量的显着氧化物如超导氧化物，电介质和铁电材料的外延生长。

3. 发明申请

US20130327634A1 MISALIGNED SPUTTERING SYSTEMS FOR THE DEPOSITION OF COMPLEX OXIDE THIN FILMS 审中-公开
标题翻译：用于沉积复合氧化物薄膜的缺陷溅射系统
公开(公告)号：US20130327634A1
公开(公告)日：2013-12-12
申请号：US13491715
申请日：2012-06-08
申请人： Chang-Beom Eom
发明人： Chang-Beom Eom
IPC分类号： C23C14/35
CPC分类号： C23C14/548 , C23C14/352 , H01J37/3417 , H01J37/3429
摘要： Thin film sputtering apparatus and methods for depositing thin films using the apparatus are provided. The sputtering apparatus comprise a sputtering chamber that houses a deposition substrate and a sputtering source configured to deposit a thin film of material onto the deposition substrate. The deposition substrate has a deposition surface with a central axis running parallel with the deposition surface normal. The magnetron sputtering source comprises two or more sputtering targets, each sputtering target having a sputtering surface with a central axis running parallel with the sputtering surface normal. The sputtering surfaces are disposed opposite the deposition surface, such that the sputtering surfaces face the deposition surface in a parallel or substantially parallel arrangement, and the central axes of the sputtering surfaces run parallel with, but are transversely offset with respect to, the central axis of the deposition surface.
摘要翻译：提供薄膜溅射装置和使用该装置沉积薄膜的方法。溅射装置包括容纳沉积基板的溅射室和被配置为将沉积基板上的薄膜沉积的溅射源。沉积基板具有沉积表面，其中心轴与沉积表面平行延伸。磁控溅射源包括两个或更多个溅射靶，每个溅射靶具有溅射表面，中心轴线与溅射表面平行平行。溅射表面与沉积表面相对设置，使得溅射表面以平行或基本上平行的布置面对沉积表面，并且溅射表面的中心轴线相对于中心轴线平行于但横向偏移的沉积表面。

4. 发明授权

US5747918A Display apparatus comprising diamond field emitters 失效
标题翻译：包括金刚石场发射器的显示装置
公开(公告)号：US5747918A
公开(公告)日：1998-05-05
申请号：US567867
申请日：1995-12-06
申请人： Chang-Beom Eom , Sungho Jin , Gregory Peter Kochanski , Mark Thomas McCormack , Yiu-Huen Wong
发明人： Chang-Beom Eom , Sungho Jin , Gregory Peter Kochanski , Mark Thomas McCormack , Yiu-Huen Wong
IPC分类号： H01J31/12 , H01J1/304 , H01J29/04 , H01J1/30
CPC分类号： H01J1/3042 , H01J2201/30403 , H01J2201/30457
摘要： A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.
摘要翻译：公开了一种用于场发射显示装置的新型和有利的阴极结构。给定像素包括在支撑体上的多个间隔开的发射体。给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层身体。还公开了制备根据本发明的阴极的方法。

5. 发明申请

US20060288928A1 Perovskite-based thin film structures on miscut semiconductor substrates 审中-公开
标题翻译：在半导体衬底上的基于钙钛矿的薄膜结构
公开(公告)号：US20060288928A1
公开(公告)日：2006-12-28
申请号：US11149951
申请日：2005-06-10
申请人： Chang-Beom Eom , Darrell Schlom
发明人： Chang-Beom Eom , Darrell Schlom
IPC分类号： B32B9/00 , B32B19/00 , B32B13/04 , C30B23/00 , C30B28/14 , C30B25/00 , C30B28/12
CPC分类号： C30B29/22 , C30B23/02 , H01L41/0815 , H01L41/1875 , H01L41/1878 , H01L41/319
摘要： A perovskite-based thin film structure includes a semiconductor substrate layer, such as a crystalline silicon layer, having a top surface cut at an angle to the (001) crystal plane of the crystalline silicon. A perovskite seed layer is epitaxially grown on the top surface of the substrate layer. An overlayer of perovskite material is epitaxially grown above the seed layer. In some embodiments the perovskite overlayer is a piezoelectric layer grown to a thickness of at least 0.5 μm and having a substantially pure perovskite crystal structure, preferably substantially free of pyrochlore phase, resulting in large improvements in piezoelectric characteristics as compared to conventional thin film piezoelectric materials.
摘要翻译：钙钛矿型薄膜结构包括具有与晶体硅的（001）晶面成角度切割的顶表面的诸如晶体硅层的半导体衬底层。在基底层的顶面上外延生长钙钛矿种子层。在种子层上外延生长钙钛矿材料的覆层。在一些实施方案中，钙钛矿覆盖层是生长至至少0.5μm厚度且具有基本上纯的钙钛矿晶体结构，优选基本上不含烧绿石相的压电层，与常规薄膜压电材料相比，导致压电特性的显着改善。

6. 发明申请

US20060091434A1 Strain-engineered ferroelectric thin films 有权
标题翻译：应变工程铁电薄膜
公开(公告)号：US20060091434A1
公开(公告)日：2006-05-04
申请号：US10977335
申请日：2004-10-29
申请人： Chang-Beom Eom , Kyung-Jin Choi , Darrell Schlom , Long-Qing Chen
发明人： Chang-Beom Eom , Kyung-Jin Choi , Darrell Schlom , Long-Qing Chen
IPC分类号： H01L29/76
CPC分类号： H01L21/02197 , H01L21/02266 , H01L21/02304 , H01L21/31691 , H01L29/516
摘要： A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.
摘要翻译：应变薄膜结构包括由具有顶表面的结晶钪酸盐材料形成的衬底层和相对于晶体衬底层外延生长的结晶铁电的应变层，以便处于应变状态，厚度低于此位错开始发生在结晶铁电层中。中间层可以在衬底层的顶表面和铁电层之间生长，其中中间层承载下面的衬底层的晶格结构。与体积铁电体相比，强电介质膜的性质大大提高，这种膜适用于铁电存储器等应用。

7. 发明申请

US20130168233A1 APPARATUS AND METHODS FOR HETEROEPITAXIAL GROWTH USING PULSED LASER AND SPUTTERING DEPOSITION WITH REAL-TIME, IN SITU RHEED IMAGING 审中-公开
标题翻译：使用脉冲激光和溅射沉积的实时生长的设备和方法，实时成像
公开(公告)号：US20130168233A1
公开(公告)日：2013-07-04
申请号：US13342766
申请日：2012-01-03
申请人： Chang-Beom Eom , Chad M. Folkman
发明人： Chang-Beom Eom , Chad M. Folkman
IPC分类号： C23C14/35 , C23C26/00
CPC分类号： C30B23/00 , C23C14/22 , C30B23/02 , C30B29/02 , C30B29/16 , H01J37/34
摘要： Apparatus and methods for the heteroepitaxial growth of multilayered structures using an integrated magnetron sputtering and PLD with continuous, in situ, real-time RHEED imaging are provided. The apparatus for carrying out the methods are equipped with a magnetron sputtering system, a PLD system and a RHEED system associated with a single vacuum chamber.
摘要翻译：提供了使用集成磁控溅射和具有连续，原位实时RHEED成像的PLD的多层结构的异质外延生长的装置和方法。用于执行该方法的装置配备有与单个真空室相关联的磁控溅射系统，PLD系统和RHEED系统。

8. 发明授权

US07449738B2 Strain-engineered ferroelectric thin films 有权
标题翻译：应变工程铁电薄膜
公开(公告)号：US07449738B2
公开(公告)日：2008-11-11
申请号：US10977335
申请日：2004-10-29
申请人： Chang-Beom Eom , Kyung-Jin Choi , Darrell G. Schlom , Long-Qing Chen
发明人： Chang-Beom Eom , Kyung-Jin Choi , Darrell G. Schlom , Long-Qing Chen
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/02197 , H01L21/02266 , H01L21/02304 , H01L21/31691 , H01L29/516
摘要： A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.
摘要翻译：应变薄膜结构包括由具有顶表面的结晶钪酸盐材料形成的衬底层和相对于晶体衬底层外延生长的结晶铁电的应变层，以便处于应变状态，厚度低于此位错开始发生在结晶铁电层中。中间层可以在衬底层的顶表面和铁电层之间生长，其中中间层承载下面的衬底层的晶格结构。与体积铁电体相比，强电介质膜的性质大大提高，这种膜适用于铁电存储器等应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式